HAMAMATSU H4083, G9230-01 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G9230-01

Uses small package with no wire

Features

l

Easy to handle since there are no wires on chip
(AnSn eutectic bonding)

Optical fibers can be brought closer to the chip

l

Miniature package: 2 × 2 × 1 mm

l

High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)

l

Precise chip position tolerance: ±0.075 mm

Applications

l

LD monitor

l

Optical fiber communication

■ General / Absolute maximum ratings

Parameter Symbol value Unit

Active area - f0.3 mm
Reverse voltage VR Max. 10 V
Operating temperature * Topr. -40 to +85 °C
Storage temperature * Tstg. -40 to +85 °C
* In N environment or in vacuum

■ Electrical and optical characteristics (Ta=25 °C)

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range l - 0.95 to 1.7 - µm

Photo sensitivity S

Dark current I
Shunt resistance Rsh VR=10 mV - 1000 - MW
Terminal capacitance Ct VR=5 V, f=1 MHz - 5 - pF
Cut-off frequency fc VR=5 V, RL=50 W - 400 - MHz
Noise equivalent power NEP l=lp - 4 × 10

PRELIMINARY DATA

Jan. 2003

l=1.3 µm
l=1.55 µm

VR=5 V - 0.3 1.5 nA

D

- 0.85 - A/W

0.85 0.95 - A/W

-15

-W/Hz

1/2

1

InGaAs PIN photodiode

G9230-01

■ Spectral response

1.2

1.0

0.8

0.6

0.4

PHOTO SENSITIVITY (A/W)

0.2

0

0.8 1 1.4 1.6

1.2

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

1.8

KIRDB0287EA

■ Terminal capacitance vs. reverse voltage

100

10

(Typ. Ta=25 ˚C, f=1 MHz)

■ Dark current vs. reverse voltage

10 nA

1 nA

100 pA

DARK CURRENT

10 pA

1 pA

0.01 0.1 10

REVERSE VOLTAGE (V)

1

(Typ. Ta=25 ˚C)

100

KIRDB0288EA

1

TERMINAL CAPACITANCE (pF)

0.1

0.1

1

REVERSE VOLTAGE (V)

■ Dimensional outline (unit: mm)

ACTIVE AREA

0.3

2.0

1.0

0.2

2.0

1.0

10

KIRDB0289EA

ANODE

0.2

0.6

(0.6)

(0.5) (0.5)

(0.2)

CATHODE

Tolerance unless otherwise noted: ±0.075
Values in parentheses indicate reference value.

KIRDA0168EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Her tfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

Cat. No. KIRD1055E02
Apr. 2003 DN