HAMAMATSU G9207-256W, G9206-256W, G9205-256W, G9214-512S, G9213-256S Datasheet
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IMAGE SENSOR
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
WAVELENGTH (µm)
PHOTO SENSITIVITY (A/W)
(Typ.)
T=25
˚C
T= -10 ˚C (G9208-256W: T= -20 ˚C)
G9211 TO
G9214 SERIES
G9208-256W
InGaAs linear image sensor
G9211 to G9214/G9205 to G9208 series
Near infrared image sensors (0.9 to 1.67 µm / 2.55 µm)
G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry.
These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a
timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs
photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near
infrared spectral range. The package is hermetically sealed for high reliability.
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input.
The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
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Wide dynamic range
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Low noise and low dark current
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Selectable gain
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Anti-saturation circuit
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CDS circuit *
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Offset compensation circuit
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Simple operation (by built-in timing generator) *
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High resolution: 25 µm pitch (512 ch)
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Low cross-talk
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256 ch: 1 video line
1
2
Applications
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Near infrared multichannel spectrophotometry
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Radiation thermometry
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Non-destructive inspection
Related products
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InGaAs multichannel detector head C8061-01, C8062-01
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Multichannel detector head controller C7557
512 ch: 2 video lines
■
Selection guide
Type No. Cooling
G9211-256S 256 50 50 × 250
G9212-512S 512 25 25 × 250
G9213-256S 256 50 50 × 500
G9214-512S
G9205-256W 0.9 to 1.85
G9206-256W 0.9 to 2.05
G9207-256W 0.9 to 2.25
G9208-256W
One-stage
TE-cooled
Two-stage
TE-cooled
Number of
pixels
512 25 25 × 500
256 50 50 × 250
Pixel pitch
(µm)
*1: CDS (Correlated Double Sampling) circuit
Pixel size
[µm (H) × µm (V)]
■ Spectral response
A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS circuit greatly
reduces this reset noise by holding the signal immediately after reset to find the noise differential.
*2: Timing generator
Different signal timings must be properly set in order to operate a
shift register. In conventional image sensor operation, external PLDs
(Programmable Logic Devices) are used to input the required timing
signals. However, G9211 to G9214/G9205 to G9208 series image
sensors internally generate all timing signals on the CMOS chip just
by supplying CLK and RESET pulses. This mak es it simple to set the
timings.
*3: Percentage of defective pixels
If your application requires sensors with no defective pixels, please
select G9201 series.
Spectral
response range
(µm)
0.9 to 1.70 1 % Max. *
0.9 to 2.55
Defective
pixel
5 % Max.
3
KMIRB0022EA
1
InGaAs linear image sensor
G9211 to G9214/G9205 to G9208 series
■ Absolute maximum ratings
Parameter Symbol Valu e Unit
Clock pulse voltage V
Operating temperature *
Storage temperature *
1
1
Topr -40 to +70 °C
Tstg -40 to +85 °C
φ
5.5 V
*1: Non condensation
■ Electrical characteristics (Ta=25 °C, Vφ=5 V)
Parameter Symbol Min. Typ . Max. Unit
Supply voltage
Ground Vss - 0 - V
Element bias INP 3.5 4.5 4.6 V
Clock frequency f 0.1 - 4 MHz
Clock pulse voltage
high Vφ - 0.5 V
low
Clock pulse rise/fall times
Clock pulse width tpw
Reset pulse voltage
high Vφ - 0.5 V
low
Reset pulse rise/fall times
Reset pulse width tpw (RES) 6000 - - ns
Video output voltage
high V
low V
Data rate f
Vdd 4.5 5.0 5.5
Vref - 1.26 -
V
φ
tr
φ
tf
φ
φ
V (RES)
tr (RES)
tf (RES)
H
L
V
000.4V
0 20 100 ns
200 - - ns
0 0 0.4 V
0 20 100 ns
-4.1-
-1.26-
- f/8 - Hz
φ
φ
Vφ + 0.5 V
Vφ + 0.5 V
V
V
■ Electrical and optical characteristics (G9211 to G9214 series: T=25 °C, G9205 to G9208 series: T= -20 °C)
Parameter
Peak sensitivity wavelength
Saturation charge
*2
RMS noise voltage
(Readout noise)
Symbo
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p - 1.55 -
λ
Qsat - 30 - - 30 - pC
N - 180 300 - 180 300 µVrms
Photo response non-uniformity PRNU - - ±5
*2: Vφ=5 V, Cf=10 pF
*3: 50 % of saturation, integration time: 10 ms, after dark output subtraction, excluding first and last pixels.
*4: 50 % of saturation, integration time: 3 ms, after dark output subtraction, excluding first and last pixels.
G9211 to G9214 series G9205 to G9208 series
Min. Typ . Max. Min. Typ. Max.
G9205 - 1.75 G9206 - 1.95 G9207 - 2.05 G9208 - 2.3 -
*3
- - ±10
*4
Dark current characteristics (T=25 °C)
Parameter Symbol Min. Typ. Max. Unit
G9211-256S - 2 10
G9212-512S - 1 5
G9213-256S - 4 20
G9214-512S - 1 5
G9205-256W
G9206-256W
G9027-256W
G9208-256W
*5
*5
*5
*5
*5: TD= -20 °C
D
I
-1560
- 30 120
- 200 800
- 500 2000
Unit
µm
%
pA
2
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