HAMAMATSU G8941-03, G8941-02, G8941-01 Datasheet
PHOTODIODE
InGaAs PIN photodiode
G8941 series
Sub-mount type photodiode for LD monitor
Features
l
Active area
G8941-01: φ1 mm
G8941-02: φ0.5 mm
G8941-03: φ0.3 mm
l
Miniature package: 2 × 2 × 1 mm
l
Precise chip position tolerance: ±0.075 mm
Applications
l
LD monitor
■ General rating
Parameter G8941-01 G8941-02 G8941-03 Unit
Active area
f1 f0.5 f0.3
■ Absolute maximum ratings
Parameter Symbol Remark G8941-01 G8941-02 G8941-03 Unit
Reverse voltage
Operating
temperature
Storage
temperature
* In N environment or in vacuum
VR
Max
.
Topr -40 to +85 °C
*
Ts t g
10 20 20 V
-55 to +125 °C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition
Spectral
response range
Photo sensitivity S
Dark current I
Shunt resistance Rsh VR=10 mV - 100 - - 300 - - 1000 Te rm in al
capacitance
Cut-off
frequency
Noise equivalent
power
Detectivity
l
D
Ct
fc
NEP
D*
l=1.31 µm
l=1.55 µm
VR=5 V - 1 5 - 0.5 2.5 - 0.3 1.5 nA
=5 V,
R
V
f=1 MHz
VR=5 V,
RL=50 W
l=lp
l=lp
G8941-01 G8941-02 G8941-03
Min. Typ . Max. Min. Typ. Max. Min. Typ. Max.
0.9 to 1.7 0.9 to 1.7 0.9 to 1.7 µm
0.8 0.9 - 0.8 0.9 - 0.8 0.9 -
0.85 0.95 - 0.85 0.95 - 0.85 0.95 -
-90- -12- - 5 - pF
- 35 - - 200 - - 400 - MHz
2 × 10
5 × 10
-14
12
8 × 10
5 × 10
-15
12
4 × 10
5 × 10
-15
12
mm
Unit
A/W
MW
W/Hz
cmHz
1/2
1/2
/W
1
InGaAs PIN photodiode
G8941 series
■ Spectral response
1
0.5
PHOTO SENSITIVITY (A/W)
0.8 1.0 1.2 1.4 1.6 1.8
0.6
WAVELENGTH (µm)
(Typ. Ta=25 ˚C)
2.0
■ Terminal capacitance vs. reverse voltage
1 nF
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
G8941-01
KIRDB0002EB
■ Dark current vs. reverse voltage
10 nA
G8941-01
1 nA
100 pA
DARK CURRENT
10 pA
0.01 0.1 1 10 100
G8941-03
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
G8941-02
■ Dark current vs. temperature
100 nA
10 nA
1 nA
G8941-01
G8941-02
(Typ. V
R
=5 V)
KIRDB0270EB
CAPACITANCE
10 pF
G8941-03
1 pF
0.01 0.1 1 10 100
REVERSE VOLTAGE (V)
G8941-02
100 pA
DARK CURRENT
10 pA
1 pA
-60 -40 -20 0 20 40 60 80 100
G8941-03
TEMPERATURE (˚C)
KIRDB0271EA KIRDB0272EA
2
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