HAMAMATSU G8921-01 Datasheet

PHOTODIODE

GaAs PIN photodiode array

G8921-01

Photodiode array for data communication

Features

l

Active area: φ0.06 mm
Element pitch: 250 µm
4-element array

l

High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
at low bias voltage (V

l

Low dark current, low capacitance

l

Up to 16 elements available as option

R=2 V)

Applications

l

Optical fiber communications

l

High-speed data link

■ General ratings

Parameter Symbol Value Unit

Active area - f0.06 mm

Element pitch - 250 µm
Number of elements - 4 ch

■ Absolute maximum ratings

Parameter Symbol Remark Value Unit

Reverse voltage VR Max
Reverse current IR Max. 0.5 mA
Operating temperature Topr -40 to +85 °C
Storage temperature Ts tg

* In N2 environment or in vacuum

.

*

30 V

-55 to +125 °C

■ Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)

Parameter Symbol Condition Min. Typ . Max. Unit

Spectral response range l - 470 to 870 - nm

Peak sensitivity wavelength
Photo sensitivity S l=850 nm 0.45 0.5 - A/W
Dark current I
Terminal capacitance Ct VR=2 V, f=1 MHz - 0.35 0.5 pF

Cut-off frequency fc

lp

VR=5 V - 2 50 pA

D

l=850 nm, VR
RL=50 W, -3 dB

=2 V,

- 850 - nm

2 - - GHz

1

GaAs PIN photodiode array

G8921-01

■ Spectral response

0.6

0.5

0.4

0.3

0.2

PHOTO SENSITIVITY (A/W)

0.1

0

300 500 600 700 800 900 1000400

WAVELENGTH (nm)

(Typ. Ta=25 ˚C)

KGPDB0048EA

■ Terminal capacitance vs. reverse voltage

10 pF

1 pF

(Typ. Ta=25 ˚C)

■ Dark current vs. reverse voltage

10.10.01

(Typ. Ta=25 ˚C)

10 100

100 pA

10 pA

1 pA

DARK CURRENT

100 fA

10 fA

REVERSE VOLTAGE (V)

■ Cross-talk characteristic

(Typ. Ta=25 ˚C, λ=830 nm, step: 5 µm, Pin=20 nW, spot light size: 10 µm)

1000

100

10

1

n ch

n+1 ch

KGPDB0049EA

TERMINAL CAPACITANCE

100 fF

10.10.01

10 100

REVERSE VOLTAGE (V)

■ Dimensional outline (unit: mm)

0.15

0.25

6.4

2.30 1.0

KGPDB0050EA

ANODE

ACTIVE AREA

0.06 × 4 ch

0.2 ± 0.05

CATHODE

KGPDA0017EA

0.1

RELATIVE SENSITIVITY (%)

0.01

0.001
0 100 200 300 400 500

POSITION (µm)

KGPDB0051EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Her tfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

Cat. No. KGPD1009E02
Jul. 2002 DN