HAMAMATSU G8909-01 Datasheet
PHOTODIODE
InGaAs PIN photodiode array
G8909-01
Photodiode array for DWDM monitor
Features
l
250 µm pitch, 40 ch parallel readout
l
Low cross-talk
l
Precise chip position tolerance: ±0.05 mm
Applications
l
DWDM monitor with AWG
■ General ratings
Parameter Value Unit
Active area f0.08 mm
Pixel pitch 250 µm
Number of elements 40 ch
■ Absolute maximum ratings
Parameter Symbol Remark Value Unit
Reverse voltage VR Max
Allowable input power P
Operating temperature Topr -40 to +85 °C
Storage temperature Ts tg
* In N environment or in vacuum
.
Max. 10 mV
in
*
6V
-40 to +85 °C
■ Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter Symbol Condition Min. Typ . Max. Unit
Spectral response range l - 0.9 to 1.7 - µm
Photo sensitivity S
Photo response non-uniformity PRNU - - ±5 %
Dark current I
Shunt resistance Rsh VR=10 mV - 8 - GW
Terminal capacitance Ct VR=5 V, f=1 MHz - 1.4 - pF
Cross-talk - VR=0.1 V - -33 - dB
PRELIMINARY DATA
Apr. 2002
l=1.31 µm
l=1.55 µm
VR=5 V - 0.02 0.2 nA
D
0.8 0.9 -
0.85 0.95 -
A/W
1
InGaAs PIN photodiode array
G8909-01
■ Spectral response
1
0.5
PHOTO SENSITIVITY (A/W)
0.8 1.0 1.2 1.4 1.6 1.8
0.6
WAVELENGTH (µm)
(Typ. Ta=25 ˚C)
2.0
■ Terminal capacitance vs. reverse voltage
10 pF
(Typ. Ta=25 ˚C, f=1 MHz)
KIRDB0002EB
■ Dark current vs. reverse voltage
1 nA
100 pA
10 pA
DARK CURRENT
1 pA
0.01 0.1 1
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
■ Dark current vs. temperature
100 nA
10 nA
10
(Typ. V
R
=5 V)
100
KIRDB0266EA
1 pF
TERMINAL CAPACITANCE
100 fF
0.01 0.1 1
REVERSE VOLTAGE (V)
■ Cross-talk characteristic
(Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V)
100
250 µm
10
1
0.1
RELATIVE SENSITIVITY (%)
0.01
-250 -200 -100
1 nA
DARK CURRENT
100 pA
10
100
10 pA
20 30 50
7040 60
80
TEMPERATURE (˚C)
KIRDB0267EA KIRDB0268EA
-50-150
0
POSITION X (µm)
KIRDB0269EA
2
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