HAMAMATSU G8605-25, G8605-23, G8605-22, G8605-21, G8605-15 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G8605 series

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response

InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.

Features

l

High-speed response

l

Low noise

l

Various active area sizes available from φ1 to φ5 mm

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25

outline/

Window

m aterial *

/K

➀

/K

➁

Package Cooling

One-stage
TE-cooled

TO-8

Two-stage
TE-cooled

Applications

l

Optical power meter

l

Water content analyzer

l

Laser diode life test

Accessories (Optional)

l

Preamp for InGaAs PIN photodiode C4159-02

(High-speed type)

l

Preamp for InGaAs PIN photodiode C4159-03
(High sensitivity type)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Temperature controller for TE-cooled type C1103-04

Absolute maximum ratings

Active

area

(mm) (mW) (A) (V) (°C) (°C)

φ
φ
φ
φ
φ
φ
φ
φ

1
2
3
5
1
2
3
5

Thermistor

power

dissipation

0.2

TE-cooler

allowable

current

1.5

1.0

Reverse

voltage

Max.

V

R

5
5
5
2
5
5
5
2

Operating

temperature

Topr

-40 to +70 -55 to +85

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. unless otherwise noted)

■

Measurement

condition

Type No.

G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25

* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)

Element

tem perature

(°C) (µm) (µm)

-10

-20

Spectral

response

range

λ

0.9 to 1.67

0.9 to 1.65

Peak

se nsitivity

wavelength

p

λ

1.55

Photo

sensitivity

S

1.3 µm
(A/W )

(A/W )

0.9 0.95

λ=λ

Dark current

I

D

VR=1 V

p

Typ.

Max.

(nA )

0.07 0.35

0.3 1.5
15

2.5 12.5

0.03 0.15

0.15 0.75

0.5 2.5

1.2 6

(nA )

Cut-off

frequency

fc

VR=1 V

=50

R

L

(MHz) (pF)

18 150 1500 5 × 10

4 550 300 1 × 10
2 1000 100 2 × 10

0.6 3500 30
18 150 3000 3 × 10

4 550 600 7 × 10
2 1000 200 1 × 10

0.6 3500 60

Ω

Terminal

capacitance

Ct

VR=1 V

f=1 MHz

Shunt

resistance

Rsh

VR=10 mV

(MΩ)

D

λ=λ

(cm ·Hz

2 × 10

3 × 10

∗

1/2

p

/W )

13

13

NEP

λ=λ

(W/Hz

3 × 10

2 × 10

p

1/2

)

-15

-14

-14

-14

-15

-15

-14

-14

1

InGaAs PIN photodiode

100 nA

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

DARK CURRENT

10 nA

100 pA

10 pA

1 nA

1 µA

(Typ. Ta=25

˚C

)

G8605-15/-25

G8605-13/-23

G8605-12/-22

G8605-11/-21

G8605 series

■

Spectral response

1

T=25 ˚C
T= -10 ˚C
T= -20 ˚C

0.5

PHOTO SENSITIVITY (A/W)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

Spectral response shifts towards the
short wavelength side when cooled.
One-stage TE-cooled type: λc=1.67 µm
Two-stage TE-cooled type: λc=1.65 µm

WAVELENGTH (µm)

(Typ.)

2.0

KIRDB0184EA

■

Photo sensitivity temperature characteristic

2

1

0

(Typ. Ta=25

˚C

TEMPERATURE COEFFICIENT (%/˚C)

-1

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

)

KIRDB0042EA

■

Photo sensitivity linearity

˚C

102

100

98

96

94

RELATIVE SENSITIVITY (%)

92

90

(Typ. Ta=25

G8605-13/-23

G8605-15/-25

02 6 1012 16

48 14

INCIDENT LIGHT LEVEL (mW)

, λ=1.3 µm, RL=2 Ω, VR=0 V)

G8605-11/-21

G8605-12/-22

KIRDB0241EA

■

Dark current vs. reverse voltage

Applying a reverse voltage increases
dark current, but improves frequency
characteristics and output linearity.

KIRDB0242EA

2