HAMAMATSU G8522-03, G8522-02, G8522-01 Datasheet
PHOTODIODE
GaAs PIN photodiode
G8522 series
High-speed response at low reverse voltage
G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
l
High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (V
G8522-02: 1.9 GHz Min. (V
G8522-03: 1.5 GHz Min. (V
l
Low noise, low dark current
l
Low terminal capacitance
R
=2 V)
R
R
=2 V)
=2 V)
Applications
l
Optical fiber communications
l
Fiber channels
l
Gigabit Ethernet
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Reverse voltage VR Max. 30 V
Operating
temperature
Storage
temperature
Topr -40 to +85
Tstg -55 to +125
°
°
■ Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition
Active area size - Spectral
response range
Peak sensitivity
wavelength
Photo sensitivity S
Dark current I
Terminal
capacitance
Cut-off
frequency
λ
p
λ
=850 nm
λ
D
VR=5 V - 2 50 - 8 200 - 20 500 pA
Ct VR=2 V, f=1 MHz - 0.3 0.45 - 0.45 0.65 - 0.8 1.2 pF
R
=2 V, RL=50
V
fc
=850 nm, -3 dB
λ
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
0.45 0.5 - 0.45 0.5 - 0.45 0.5 - A/W
Ω
G8522-01 G8522-02
40
φ
470 to
870
- 850 - - 850 - 850 - nm
3 - -1.9- -1.5- -GHz
--
- -
470 to
80
φ
870
--
-
G8522-03
120
φ
470 to
870
Unit
-µm
- nm
C
C
1
GaAs PIN photodiode
G8522 series
■ Spectral response ■ Dark current vs. reverse voltage
PHOTO SENSITIVITY (A/W)
10 pF
0.6
0.5
0.4
0.3
0.2
0.1
(Typ. Ta=25 ˚C)
100 pA
10 pA
1 pA
(Typ. Ta=25 ˚C)
DARK CURRENT
100 fA
0
600400
800 1000
WAVELENGTH (nm)
KGPDB0044EA
10 fA
10.10.01
REVERSE VOLTAGE (V)
10 100
KGPDB0045EA
■ Dimensional outline (unit: mm)■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
5.4 ± 0.2
4.6 ± 0.1
WINDOW
3.0 ± 0.2
± 0.2
2.7 ± 0.2
3.6
1 pF
G8522-02
TERMINAL CAPACITANCE
100 fF
REVERSE VOLTAGE (V)
G8522-01
10.10.01
G8522-03
10 100
KGPDB0046EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.54 ± 0.2
1.2 MAX.
CASE
13 MIN.
0.4 MAX.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
KGPDA0015EA
Cat. No. KGPD1008E01
Jan. 2002 DN
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