HAMAMATSU G8372-03, G8372-01, G5852-23, G5852-21, G5852-203 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G8422/G8372/G5852 series

Long wavelength type (up to 2.1 µm)

Features

l

Cut-off wavelength: 2.1 µm

l

3-pin TO-18 package: low price

l

TE-cooled type TO-8 package: low dark current

l

Active area: f0.3 to f3 mm

■ Specifications / Absolute maximum ratings

Type No.

G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23

Dimensional

outline

➀

➁

➂

➃

Package Cooling

TO-18

Non-cooled

TO-5

TO-8

TO-8

One-stage
TE-cooled

Two-stage
TE-cooled

Applications

l

Gas analyzer

l

Water content analyzer

l

NIR (Near Infrared) photometry

Absolute maximum ratings

Active

area

(mm) (mW) (A) (V) (°C) (°C)

0.3

φ

0.5

φ

φ
φ

0.3

φ

φ
φ

0.3

φ

φ
φ

1
3

1
3

1
3

Thermistor

power

dissipation

TE-cooler

allowable

current

Reverse

voltage

V

R

Operating

temperature

Topr

- - -40 to +85 -55 to +125

1.5

0.2

2

-40 to +70 -55 to +85

1.0

Storage

temperature

Tstg

■ Electrical and optical characteristics (Typ. unless otherwise noted)

Type No.

Measurement

condition

Element

Temperature

T

(°C) (µm) (µm) (A/W)

Spectral

response

range

λ

Peak

se n s itivity

wavelength

p

λ

Photo

sensitivity

S

p

λ=λ

Dark current

D

I

VR=1 V

Typ.
(nA)

Max.

(nA)
G8422-03 55 550 100 8 0.9 1.5 × 10
G8422-05 125 1250 80 20 0.3 2.5 × 10
G8372-01 500 5000 40 80 0.1 4 × 10
G8372-03
G5852-103 5.5 55 100 8 9 5 × 10
G5852-11 50 500 40 80 1 1 × 10
G5852-13

25 0.9 to 2.1

-10 0.9 to 2.07

5 (µA) 50 (µA) 3 800 0.01

1.95 1.2

500 5000 3 800 0.1
G5852-203 3 30 100 8 18 3 × 10
G5852-21 25 250 40 80 2 8 × 10
G5852-23

-20 0.9 to 2.05
250 2500 3 800 0.2

Cut-off

frequency

Terminal

capacitance

fc

VR=1 V

L

=50

R

Ω

VR=1 V

f=1 MHz

(MHz) (pF)

Ct

Shunt

resistance

Rsh

VR=10 mV

(MΩ)

∗

D

λ=λ

1/2

(cm ·H z

2.5 × 10

8 × 10

1.2 × 10

p

/W )

11

NEP

λ=λ

(W/Hz

11

1.5 × 10

4 × 10

12

3 × 10

p

1/2

)

-13

-13

-13

-12

-14

-13

-13

-14

-14

-13

1

InGaAs PIN photodiode

10.8 1.6 2 2.2 2.6

WAVELENGTH (µm)

TEMPERATURE COEFFICIENT (%/˚C)

-1

(Typ.)

1.2 1.4 1.8 2.4

0

1

2

1 MΩ

-40 -20 0 20 40 60 80 90 100

ELEMENT TEMPERATURE (˚C)

100 kΩ

10 kΩ

100 Ω

1 kΩ

10 MΩ

(Typ. V

R=10 mV)

G8422-03
G5852-103/-203

G8422-05

G8372-01
G5852-11/-21

G8372-03
G5852-13/-23

SHUNT RESISTANCE

G8422/G8372/G5852 series

■

Spectral response

1.4

1.2

1.0

0.8

0.6

PHOTO SENSITIVITY (A/W)

0.4

0.2

0

T= -20 ˚C

T= -10 ˚C

1.41.21.00.8

1.6 1.8 2.22.0 2.4

WAVELENGTH (µm)

■

Dark current vs. reverse voltage

Non-cooled type TE-cooled type

100 µA

T=25 ˚C

(Typ. Ta=25

(Typ.)

˚C

KIRDB0226EA

)

■

Photo sensitivity temperature characteristic

1 µA

(Typ.)

KIRDB0207EA

10 µA

1 µA

DARK CURRENT

100 nA

10 pA

0.01 0.1 1 10

REVERSE VOLTAGE (V)

■

Terminal capacitance vs. reverse voltage

10 nF

1 nF

100 pF

10 pF

TERMINAL CAPACITANCE

1 pF

0.01 0.1 1 10

REVERSE VOLTAGE (V)

2

G8372-03

G8372-01

G8422-05

G8422-03

(Typ. Ta=25 ˚C, f=1 MHz)

G8372-03
G5852-13/-23

G8372-01
G5852-11/-21

G8422-03
G5852-103/-203

G8422-05

100 nA

10 nA

DARK CURRENT

1 nA

100 pA

0.01 0.1 1 10

G5852-13 (T= -10

G5852-23 (T= -20

G5852-21 (T= -20

G5852-11 (T= -10

G5852-103 (T= -10

G5852-203 (T= -20

˚C

)

˚C

)

˚C

˚C

)

˚C

)

˚C

)

)

REVERSE VOLTAGE (V)

KIRDB0235EA KIRDB0228EA

■

Shunt resistance vs. element temperature

KIRDB0236EA

KIRDB0237EA