HAMAMATSU G8421-05, G8421-03, G8371-03, G8371-01, G5851-21 Datasheet
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PHOTODIODE
InGaAs PIN photodiode
G8421/G8371/G5851 series
Long wavelength type
Features
l
Long cut-off wavelength: 1.9 µm
l
3-pin TO-18 package: low price
l
Thermoelectrically cooled TO-18 package: low dark current
l
Active area: φ0.3 to φ3 mm
Specifications / Absolute maximum ratings
■
Dimensional
Type No.
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
outline/
Window
material
➀
➁
➂
➃
Package Cooling
TO-18
Non-cooled
TO-5
TO-8
TO-8
One-stage
TE-cooled
Two-stage
TE-cooled
Applications
l
Optical power meter
l
Gas analyzer
l
NIR (near infrared) photometry
Absolute maximum ratings
Active
area
(mm) (mW) (A) (V) (°C) (°C)
f0.3
f0.5
f1
f3
f0.3
f1
f3
f0.3
f1
f3
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
- - -40 to +85 -55 to +125
1.5
0.2
2
-40 to +70 -55 to +85
1.0
Storage
temperature
Tstg
Electrical and optical characteristics (Typ. unless otherwise noted)
■
Cut-off
frequency
Terminal
capacitance
fc
=1 V
V
R
R
=50 W
L
V
f=1 MHz
-3 dB
(MHz) (pF)
Ct
=1 V
R
Shunt
resistance
Rsh
4
=10 mV
V
(MW)
D
l=lp
(cm·Hz
*
NEP
l=lp
1/2
(W/Hz
/W)
Type No.
Measurement
Condition
Element
temperature
Spectral
response
range
l
Peak
sensitivity
wavelength
lp
(°C) (µm) (µm) (A/W)
Photo
sensitivity
S
l=lp
Dark current
I
D
VR=1 V
Typ.
(nA)
Max.
(nA)
G8421-03 30 300 100 8 1.5 9 × 10
G8421-05 50 500 80 20 1 1.5 × 10
G8371-01 100 1000 40 80 0.5 2 × 10
G8371-03
G5851-103 3 30 100 8 15 3 × 10
G5851-11 10 100 40 80 5 6 × 10
G5851-13
25 0.9 to 1.9
-10 0.9 to 1.87
2000 20000 3 800 0.05
1.75 1.1
200 2000 3 800 0.5
5 × 10
1.5 × 10
11
8 × 10
12
2 × 10
G5851-203 1.5 15 100 8 35 2 × 10
G5851-21 5 50 40 80 10 4 × 10
G5851-23
-20 0.9 to 1.85
100 1000 3 800 1
2.5 × 10
12
1.5 × 10
1/2
)
-14
-13
-13
-13
-14
-14
-13
-14
-14
-13
1
InGaAs PIN photodiode
10.8 1.6 2 2.2 2.6
WAVELENGTH (µm)
TEMPERATURE COEFFICIENT (%/˚C)
-1
(Typ.)
1.2 1.4 1.8 2.4
0
1
2
0.01 0.1 1 10
REVERSE VOLTAGE (V)
DARK CURRENT
100 pA
(Typ.)
1 nA
10 nA
100 nA
1 µA
G5851-13 (T= -10
˚C
)
G5851-23 (T= -20
˚C
)
G5851-11 (T= -10
˚C
)
G5851-103 (T= -10
˚C
)
G5851-203 (T= -20
˚C
)
G5851-21
(T= -20
˚C
)
G8421/G8371/G5851 series
■
Spectral response
1.4
1.2
1.0
0.8
0.6
0.4
PHOTO SENSITIVITY (A/W)
0.2
0
T= -10 ˚C
T= -20 ˚C
1.41.21.00.8
1.6 1.8 2.22.0
WAVELENGTH (µm)
■
Dark current vs. reverse voltage
Non-cooled type TE-cooled type
10 µA
T=25 ˚C
(Typ. Ta=25
(Typ.)
˚C
KIRDB0221EA
)
■
Photo sensitivity temperature characteristic
KIRDB0208EA
1 µA
G8371-01
100 nA
DARK CURRENT
10 nA
1 nA
0.01 0.1 1 10
G8421-05
REVERSE VOLTAGE (V)
■
Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
2
10 pF
TERMINAL CAPACITANCE
1 pF
0.1 1 10
G8421-05
REVERSE VOLTAGE (V)
G8421-03
(Typ. Ta=25 ˚C, f=1 MHz)
G8371-03
G5851-13/-23
G8371-01
G5851-11/-21
G8421-03
G5851-103/-203
G8371-03
KIRDB0232EB KIRDB0223EA
■
Shunt resistance vs. element temperature
R=10 mV)
10 MΩ
1 MΩ
100 kΩ
10 kΩ
G8371-01
G5851-11/-21
SHUNT RESISTANCE
1 kΩ
100 Ω
-40 -20 0 40 60
G8371-03
G5851-13/-23
20 80 90 100
(Typ. V
G8421-03
G5851-103/-203
G8421-05
ELEMENT TEMPERATURE (˚C)
KIRDB0233EA
KIRDB0234EA
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