HAMAMATSU G8376-02, G8376-01, G8376-05, G8376-03 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G8376 series

Standard type

InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.

Features

l

Low noise, low dark current

l

Low terminal capacitance

l

3-pin TO-18 package

■ Specifications / Absolute maximum ratings

Type No. Window material Package

G8376-01
G8376-02
G8376-03
G8376-05

Borosilicate glass
with anti-reflective
coating (optimized
for 1.55 µm peak)

TO-18

Applications

l

NIR (near infrared) photometry

l

Optical communication

Absolute maximum ratings

Active area

(mm) (V) (°C) (°C)

0.04

φ

0.08

φ

0.3

φ

0.5

φ

Reverse

voltage

R

V

20 -40 to +85 -55 to +125

Operating

temperature

Topr

temperature

Storage

Tstg

■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Spectral

response

Type No.

G8376-01 0.06 0.3 3000 0.5 10000 2 × 10
G8376-02 0.08 0.4 2000 1 8000 2 × 10
G8376-03 0.3 1.5
G8376-05
* VR=5 V

range

(µm) (µm)

0.9 to 1.7 1.55 0.9 0.95

Peak

sensitivity

wavelength

p

λ

Photo

sensitivity

1.3 µm
(A/W)

S

λ=λ

(A/W)

Typ.

p

(nA)

Dark

current

D

I

VR=5 V

Max.

(nA)

0.5 2.5

Cut-off

frequency

fc

R

=2 V

V

L

=50

R

-3 dB

(MHz) (pF)

400 * 5 1000
200 * 12 300

Terminal

capacitance

VR=5 V

f=1 MHz

Ω

Ct

Shunt

resistance

Rsh

R

=10 mV

V

(MΩ)

D

λ=λ

(cm· Hz

5 × 10

∗

p

1/2

/W)

12

NEP

λ=λ

(W/Hz

4 × 10
8 × 10

p

1/2

)

-15

-15

-15

-15

1

InGaAs PIN photodiode G8376 series

■ Spectral response

1

0.5

PHOTO SENSITIVITY (A/W)

0

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

■ Terminal capacitance vs.
reverse voltage

1 nF

100 pF

10 pF

1 pF

TERMINAL CAPACITANCE

100 fF

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

(Typ. Ta=25

G8376-05

G8376-02

G8376-01

(Typ. Ta=25 ˚C)

˚C

, f=1 MHz)

G8376-03

■ Photo sensitivity temperature
characteristic

2

1

0

TEMPERATURE COEFFICIENT (%/˚C)

2.0

KIRDB0002EB KIRDB0042EA

-1

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

(Typ. Ta=25

˚C

)

■ Shunt resistance vs. ambient
temperature

100 GΩ

10 GΩ

1 GΩ

100 MΩ

G8376-03

SHUNT RESISTANCE

10 MΩ

1 MΩ

-40 -20 0 40 60 80 100

AMBIENT TEMPERATURE (˚C)

G8376-01

G8376-05

20

(Typ. V

G8376-02

R

=10 mV)

KIRDB0251EAKIRDB0250EA

■ Dark current vs. reverse voltage

10 nA

1 nA

100 pA

DARK CURRENT

10 pA

1 pA

0.01 0.1 1 10 100

G8376-03

G8376-02

REVERSE VOLTAGE (V)

(Typ. Ta=25

G8376-05

G8376-01

˚C

)

KIRDB0249EA

■ Dimensional outline (unit: mm)

5.4 ± 0.2

4.7 ± 0.1

WINDOW

3.0 ± 0.1

2.6 ± 0.2

3.7 ± 0.213 MIN.

PHOTOSENSITIVE
SURFACE

0.45
LEAD

2.5 ± 0.2

CASE

KIRDA0150EB

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

Cat. No. KIRD1051E03
Feb. 2002 DN