HAMAMATSU G8423-05, G8423-03, G5853-11, G5853-103, G5853-23 Datasheet
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PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
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Long cut-off wavelength: 2.6 µm
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3-pin TO-18 package: low price
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Thermoelectrically cooled TO-8 package: low dark current
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Active area: φ0.3 to φ3 mm
Specifications / Absolute maximum ratings
■
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
Dimensional
outline
➀
➁
➂
➃
Package Cooling
TO-18
Non-cooled
TO-5
TO-8
TO-8
One-stage
TE-cooled
Two-stage
TE-cooled
Applications
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Gas analysis
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Spectrophotometer
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NIR (near infrared) photometry
Absolute maximum ratings
Active
area
(mm) (mW) (A) (V) (°C) (°C)
0.3
φ
0.5
φ
φ
φ
0.3
φ
φ
φ
0.3
φ
φ
φ
1
3
1
3
1
3
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
- - -40 to +85 -55 to +125
1.5
0.2
2
-40 to +70 -55 to +85
1.0
Storage
temperature
Tstg
Electrical and optical characteristics (Typ. unless otherwise noted)
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Type No.
Measurement
condition
Element
temperature
Spectral
response
range
λ
Peak
se n s itiv ity
wavelength
p
λ
(°C) (µm) (µm) (A/W)
Photo
sensitivity
S
p
λ=λ
Dark current
I
D
VR=1 V
Typ.
(µA)
Max.
(µA)
Cut-off
frequency
Terminal
capacitance
fc
=1 V
V
R
=50
R
L
f=1 MHz
Ω
V
-3 dB
(MHz) (pF)
Ct
=1 V
R
Shunt
resistance
Rsh
VR=10 mV
(kΩ)
D
λ=λ
(cm ·H z
∗
1/2
p
/W )
NEP
λ=λ
(W/Hz
G8423-03 2 20 60 40 30 7 × 10
G8423-05 5 50 50 60 15 1 × 10
G8373-01 15 75 15 200 3 2 × 10
G8373-03
G5853-103 0.2 2 60 40 300 3 × 10
G5853-11 1.5 7.5 15 200 30 7 × 10
G5853-13
25 1.2 to 2.6
-10 1.2 to 2.57
150 1500 1.5 1800 0.3
2.3 1.1
15 150 1.5 1800 3
5 × 10
1 × 10
10
8 × 10
11
2 × 10
G5853-203 0.1 1 60 40 600 2 × 10
11
G5853-21 0.8 4 15 200 60 5 × 10
G5853-23
-20 1.2 to 2.55
7.5 75 1.5 1800 6
2 × 10
1.8 × 10
p
1/2
)
-13
-12
-12
-12
-13
-13
-12
-13
-13
-12
1
InGaAs PIN photodiode
100 kΩ
-40 -20 0 20 40 60 80 90 100
ELEMENT TEMPERATURE (˚C)
SHUNT RESISTANCE
10 kΩ
1 kΩ
10 Ω
100 Ω
1 MΩ
(Typ. V
R
=10 mV)
G8423-03
G5853-103/-203
G8423-05
G8373-01
G5853-11/-21
G8373-03
G5853-13/-23
G8423/G8373/G5853 series
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Spectral response
1.4
1.2
1.0
0.8
0.6
0.4
PHOTO SENSITIVITY (A/W)
0.2
0
1.6 1.8 2.0 2.4 2.62.2 2.8
1.41.21.00.8
WAVELENGTH (µm)
■
Dark current vs. reverse voltage
Non-cooled type TE-cooled type
1 mA
G8373-03
T= -20 ˚C
T= -10 ˚C
T=25 ˚C
(Typ. Ta=25
(Typ.)
˚C
KIRDB0216EA
)
■
Photo sensitivity temperature characteristic
2
1
0
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
-1
10.8 1.6 2 2.2 2.6
1.2 1.4 1.8 2.4
WAVELENGTH (µm)
100 µA
G5853-13 (T= -10
˚C
)
(Typ.)
KIRDB0206EA
100 µA
10 µA
DARK CURRENT
1 µA
100 nA
0.01 0.1 1 10
REVERSE VOLTAGE (V)
■
Terminal capacitance vs. re verse voltage
10 nF
2
1 nF
100 pF
TERMINAL CAPACITANCE
10 pF
0.1 1 10
REVERSE VOLTAGE (V)
G8373-01
G8423-05
G8423-03
(Typ. Ta=25 ˚C, f=1 MHz)
G8373-03
G5853-13/-23
G8373-01
G5853-11/-21
G8423-05
G8423-03
G5853-103/-203
10 µA
G5853-23 (T= -20
1 µA
DARK CURRENT
100 nA
10 nA
0.01 0.1 1 10
G5853-21 (T= -20 ˚C)
G5853-103 (T= -10 ˚C)
G5853-203 (T= -20 ˚C)
˚C
)
G5853-11 (T= -10 ˚C)
REVERSE VOLTAGE (V)
KIRDB0238EA KIRDB0218EA
■
Shunt resistance vs. element temperature
KIRDB0239EA
KIRDB0240EA
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