HAMAMATSU G8370-10 Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8370-10
Ceramic package with large active area (φ10 mm)
Features
l
Large active area: φ10 mm
l
High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l
Low dark current
l
Low PDL: 5 mdB Typ., 10 mdB Max.
l
Photo response non-uniformity: ±2 % Typ.
Applications
l
l
LD aging equipment
General / Absolute maximum ratings
Parameter Symbol Value Unit
Active area - f10 mm Reverse voltage VR Max. 1 V Operating temperature Topr. -25 to +70 * °C Storage temperature Tstg. -25 to +70 * °C * No condensation
Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range l - 0.9 to 1.7 - µm Peak sensitivity wavelength
Photo sensitivity S
Dark current I Shunt resistance Rsh VR=10 mV 5 50 - kW Terminal capacitance Ct VR=0 V, f=1 MHz - 20 - nF Cut-off frequency fc VR=0 V, RL=50 W - 100 - kHz Noise equivalent power NEP Detectivity D* l=lp - 1.5 × 10 Photo response non-uniformity PRNU 80 % of active area - ±2 - % PDL - VR=0 V, l=1.55 µm - 5 10 mdB
PRELIMINARY DATA
Jan. 2003
lp
l=1.3 µm 0.8 0.85 - A/W l=lp 0.85 0.95 - A/W
VR=10 mV - 0.2 2 µA
D
l=lp
- 1.55 - µm
- 6 × 10
-13
12
- W/Hz
-cm·Hz
1/2
1/2
/W
1
InGaAs PIN photodiode
G8370-10
Spectral response
1.2
1.0
0.8
0.6
0.4
PHOTO SENSITIVITY (A/W)
0.2
0
0.8 1.0 1.4 1.6
1.2
WAVELENGTH (µm)
(Typ. Ta=25 ˚C)
1.8
KIRDB0284EA
Terminal capacitance vs. reverse voltage
100
10
(Typ. Ta=25 ˚C)
Dark current vs. reverse voltage
10 µA
1 µA
100 nA
(Typ. Ta=25 ˚C)
DARK CURRENT
10 nA
1 nA
0.01 0.1
1
REVERSE VOLTAGE (V)
10
KIRDB0285EA
TERMINAL CAPACITANCE (nF)
1
0.01
0.1 1
REVERSE VOLTAGE (V)
Dimensional outline (unit: mm)
16.5 ± 0.2
12.5 ± 0.2
ACTIVE AREA 10
PHOTOSENSITIVE SURFACE
1.3 ± 0.1
0.3 ± 0.1
0.5 LEAD
15.1 ± 0.3
10
15.0 ± 0.2
2.2 ± 0.110.5
0.1
13.7 ± 0.3
KIRDB0286EA
KIRDA0167EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Her tfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8 -509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KIRD1058E01 Jan. 2003 DN
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