HAMAMATSU G8370-05, G8370-03, G8370-02, G8370-01 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G8370 series

Large active areas from φ1 to φ5 mm

InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes
with active areas from φ1 to φ5 mm.

Features

l

Low noise, low dark current

l

Large active area

l

Various active area sizes available

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

G8370-01
G8370-02
G8370-03
G8370-05

outline/

Window

material *

1

/K TO-18

➀

/K TO-5

➁

/K TO-8

➂

Package

Applications

l

Laser monitor

l

Optical power meter

l

Laser diode life test

Absolute maximum ratings

Active area

(mm) (V) (°C) (°C)

1

φ

2

φ

3

φ

5

φ

Reverse

voltage

VR Max.

10

5

2

Operating

temperature

Topr

-40 to +85 -55 to +125

temperature

Storage

Tstg

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

■

Cut-off

D

Max.

(nA)

frequency

fc
=1 V

V

R

=50

R

L

-3 dB

(MHz) (pF)

2

35 *

455025
2 1000 10

0.6 3500 3

Spectral

response

Type No.

G8370-01 1 *25 *
G8370-02 525
G8370-03 15 75
G8370-05

*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)

=5 V

*2: V

R

range

(µm) (µm)

0.9 to 1.7 1.55 0.9 0.95

Peak

se nsitivity

wavelength

p

λ

Photo

sensitivity

1.3 µm
(A/W)

S

λ=λ

(A/W)

p

Dark

current

I

VR=1 V

Typ.
(nA)

25 125

Ω

2

Terminal

capacitance

Ct
=1 V

V

R

f=1 MHz

2

90 *

Shunt

resistance

Rsh

=10 mV

V

R

(MΩ)

100 2 × 10

D

λ=λ

(cm ·Hz

5 × 10

∗

p

1/2

/W )

12

NEP

λ=λ

(W/Hz

4 × 10
6 × 10
1 × 10

p

1/2

)

-14

-14

-14

-13

1

InGaAs PIN photodiode

G8370 series

■ Spectral response

1

0.5

(Typ. Ta=25 ˚C)

■ Photo sensitivity temperature characteristic

2

1

0

PHOTO SENSITIVITY (A/W)

TEMPERATURE COEFFICIENT (%/˚C)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

2.0

KIRDB0002EB KIRDB0042EA

-1

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

■ Photo sensitivity linearity ■ Dark current vs. reverse voltage

(Typ. Ta=25 ˚C)

102

100

98

96

94

RELATIVE SENSITIVITY (%)

92

90

02 6 1012 16

(Typ. Ta=25 ˚C, λ=1.3 µm, R

G8370-05

48 14

L=2 Ω, VR=0 V)

G8370-01

G8370-02

INCIDENT LIGHT LEVEL (mW)

G8370-03

1 µA

100 nA

10 nA

1 nA

G8370-05

(Typ. Ta=25 ˚C)

G8370-03

G8370-02

DARK CURRENT

100 pA

10 pA

0.01 0.1 1 10 100

G8370-01

REVERSE VOLTAGE (V)

KIRDB0245EA KIRDB0246EA

2