HAMAMATSU G8198-02, G8198-01 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G8198 series

High-speed response at low reverse voltage

Features

l

High-speed response at low reverse voltage
G8198-01: 3 GHz (V
G8198-02: 2 GHz (V

l

Low noise, low dark current

l

Low terminal capacitance

l

Small package

Absolute maximum ratings (Ta=25 °C)

■

Parameter Symbol Value Unit

Reverse voltage V4 Max. 20 V
Operating temperature Topr -40 to +85
Storage temperature Tstg -55 to +125

R

=2 V)

R

=2 V)

Applications

l

Optical fiber communications

l

Fiber channel

l

Gigabit Ethernet

°C
°C

Specifications (Ta=25 °C)

■

Parameter Symbol Condition

Active area - ­Spectral response range
Peak sensitivity

wavelength

Photo sensitivity S

Dark current I

Cut-off frequency fc

Terminal capacitance Ct

lp

l

l=1.3 µm
l=1.55 µm

V4=5 V - 0.06 0.3 - 0.08 0.4 nA

,

R

=2 V, RL=50

V

l=1.3 µm
V4=2 V
f=1 MHz

Min. Typ. Max. Min. Typ. Max.

0.85 0.95 - 0.85 0.95 -

9

G8198-01 G8198-02

f0.04

- 0.9 to 1.7 - - 0.9 to 1.7 - µm

- 1.55 - - 1.55 - µm

0.8 0.9 - 0.8 0.9 -

-3- - 2-GHz

- 0.6 - - 0.9 - pF

--

f0.08

Unit

-mm

A/W

1

InGaAs PIN photodiode G8198 series

■ Spectral response

1.2

1.0

0.8

0.6

0.4

PHOTO SENSITIVITY (A/W)

0.2

0

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

KIRDB0160EA KIRDB0161EA

■ Terminal capacitance vs. reverse voltage

10 pF

G8198-02

1 pF

(Typ. Ta=25 ˚C)

■ Dark current vs. reverse voltage

1 nA

100 pA

10 pA

DARK CURRENT

1 pA

0.01 0.1 1 10 100

G8198-02

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

G8198-01

■ Frequency response

10

(Typ. Ta=25

5

0

-5

˚C, λ

G8198-02

=1.3 µm, R

L

=50 Ω, VR=2 V)

G8198-01

G8198-01

TERMINAL CAPACITANCE

100 fF

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

■ Dimensional outline (unit: mm)

4.2 ± 0.1

3.5 ± 0.1

WINDOW

ANTI-REFLECTION COATING
WINDOW l=1.55 µm

1 MIN.

PHOTOSENSITIVE
SURFACE

0.3
LEAD

CASE

1.65

± 0.2

± 0.15

0.7

1.6

0.38 MAX.

± 0.2

2.7

7.62 MAX.

-10

RELATIVE OUTPUT (dB)

-15

-20
10 MHz 100 MHz 1 GHz 10 GHz

FREQUENCY

KIRDB0162EA KIRDB0163EA

■ Eye diagram (photodiode output)

2.48832 Gbps
Pin= -3 dBm
VR=2.0 V
100 ps/div.

KIRDA0097EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

Cat. No. KIRD1028E02
Jan. 2001 DN