HAMAMATSU G7189, G5645, G6262, G5842 Datasheet

PHOTODIODE

GaAsP photodiode

Diffusion type

Short-wavelength type photodiode

Features

l

Low dark current

l

Narrow spectral response range

General ratings / Absolute maximum ratings

■

Dimensional

Type No.

G5645
G5842
G6262
G7189

outline/

Window

material *

/K TO-18

➀

➁
➁

/R Plastic

➂

Package

Plastic
Plastic

Applications

l

Analytical instruments

l

UV detection

Active area

size

(mm) (mm

0.8 × 0.8 0.58 5 -30 to +80 -40 to +85

Effective

active

area

2

) (V) (°C) (°C)

Reverse

V

Absolute maximum ratings

Operating

voltage

Max.

R

temperature

Topr

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. Ta=25

■

Spectral

response

Type No.

G5645
G5842
G6262
G7189

* Window material K: borosilicate glass, R: resin coating

range

(nm) (nm)

300 to 580
260 to 400
280 to 580
300 to 580

sensitivity

wavelength

λ

Photo sensitivity

Peak

p

λ

470 0.28 0.05 60 90 2.3 × 10
370 0.06 - - 2 7.6 × 10
470 0.2 0.05 45 65 2.3 × 10
470 0.25 0.02 45 65

λ

(A/W)

p

S

GaP
LED

560 nm

°C

, unless otherwise noted)

lx

Dark

current

I

D

VR=5 V

Max.

50 1.07 3 80 10 80

Short circuit

current

Isc

1000

Min.

Typ.

(nA)

(nA) (pA)

Temp.

coefficient

of

I

D

T

CID

(times/°C)

Rise time

tf

=0 V

V

R

=1 k

R

Ω

L

(µs) (pF)

Terminal

capacitance

Ct

VR=0 V

f=10 kHz

Shunt

resistance

Rsh

=10 mV

V

R

Min.

Typ.

(GΩ)

(GΩ)(W/Hz

NEP

2.3 × 10

1/2

)

-15

-15

-15

-15

■■

■Spectral response

■■

0.5

(Typ. Ta=25 ˚C)

GaAsP photodiode

0.1

Diffusion type

(Typ. Ta=25 ˚C)

0.4

G5645

0.3

0.2

0.1

PHOTO SENSITIVITY (A/W)

0

200 400 600

G7189

G6262

800

WAVELENGTH (nm)

KGPDB0029EA KGPDB0001EC

■■

■Photo sensitivity temperature characteristic

■■

+3.0

+2.5

+2.0

+1.5

+1.0

+0.5

0

(Typ.)

TEMPERATURE COEFFICIENT (%/˚C)

-0.5
400200

600 800

0.08

G5842

0.06

0.04

0.02

PHOTO SENSITIVITY (A/W)

0

200 300 400

WAVELENGTH (nm)

■■

■Rise time vs. load resistance

■■

10 ms

1 ms

100 µs

10 µs

RISE TIME

1 µs

100 ns

10

2

3

10

(Typ. Ta=25 ˚C, VR=0 V)

4

10

500

5

10

6

10

WAVELENGTH (nm)

■■

■Dark current vs. reverse voltage

■■

100

pA

10

pA

1

pA

DARK CURRENT

100

fA

0.01 0.10.001

(Typ. Ta=25 ˚C, VR=0 V)

REVERSE VOLTAGE (V)

KGPDB0030EA

110

KGPDB0032EA

LOAD RESISTANCE (Ω)

KGPDB0031EA

■■

■Shunt resistance vs. ambient temperature

■■

10 TΩ

1 TΩ

100 GΩ

10 GΩ

1 GΩ

(Typ. VR=10 mV)

SHUNT RESISTANCE

100 MΩ

10 MΩ

020-20

40 60 80

AMBIENT TEMPERATURE (˚C)

KGPDB0033EA