HAMAMATSU G7151-16, G7150-16 Datasheet

PHOTODIODE

InGaAs PIN photodiode array

G7150/G7151-16

16-element array

Features

l

16-element array

l

For simple measurement

Applications

l

Near Infrared (NIR) spectrophotometer

■ General ratings

Parameter G7150-16 G7151-16 Unit

Package DIP ­Active area 0.45 × 1 (× 16 elements) 0.08 × 0.2 (× 16 elements) mm

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Value Unit

Reverse voltage V
Operating temperature Topr -25 to +70
Storage temperature Tstg -25 to +70

R

5V

C

°

C

°

■ Electrical and optical characteristics (Ta=25 °C, per 1 element)

Parameter Symbol Condition

Spectral response range
Peak sensitivity wavelength

Photo sensitivity S

Dark current I

Cut-off frequency fc

Terminal capacitance Ct VR=1 V, f=1 MHz - 100 - - 10 - pF
Shunt resistance Rsh VR=10 mV - 100 - - 1000 ­Detectivity
Noise equivalent power NEP

λ

p

λ

=1.3 µm

λ

=1.55 µm

λ

D

VR=1 V - 5 25 - 0.2 1 nA

R

=1 V, RL=50

V

=1.3 µm, -3 dB

λ

∗

D

λ=λ
λ=λ

p
p

Ω

G7150-16 G7151-16

Min. Typ. Max. Min. Typ. Max.

- 0.9 to 1.7 - - 0.9 to 1.7 - µm

- 1.55 - - 1.55 - µm

0.9 - 0.9 -

0.95 - 0.95 -

- 30 - - 300 - MHz

- 5 × 10

- 2 × 10

12

-14

- - 5 × 10

- - 3 × 10

12

-15

- cm·Hz

-W/Hz

Unit

A/W

M

Ω

1/2

/W

1/2

1

InGaAs PIN photodiode array

0.25

0.5 ± 0.1 0.6 ± 0.3

ACTIVE AREA
(16 ×) 0.08 × 0.2

22.9 ± 0.3

7.5 ± 0.2

2.2 ± 0.34.0 MIN.

1.1 ± 0.2

2.45 ± 0.15 0.46

0.8 ± 0.3

PIN No.

DETECTOR

1
3
5
7
9

PIN No.

DETECTOR

KC

11
13
15
16

PIN No.

DETECTOR

14
12

KC

10

8

PIN No.

DETECTOR

6
4
2

WINDOW

PHOTOSENSITIVE
SURFACE

INDEX MARK

G7150/G7151-16

■ Spectral response

1

0.5

PHOTO SENSITIVITY (A/W)

0

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

■ Terminal capacitance vs.
reverse voltage

1000

100

10

TERMINAL CAPACITANCE (pF)

1

0.01 0.1 1 10

(Typ. Ta=25 ˚C, f=1 MHz)

G7150-16

G7151-16

REVERSE VOLTAGE

■ Dimensional outlines (unit: mm)

■ Photo sensitivity temperature

characteristic

2

1

0

TEMPERATURE COEFFICIENT (%/˚C)

2.0

KIRDB0002EB

-1

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

■ Shunt resistance vs. ambient
temperature

100 GΩ

10 GΩ

1 GΩ

KIRDB0255EB

100 MΩ

SHUNT RESISTANCE

10 MΩ

1 MΩ

G7150-16

-40 -20 0 40 60 80 100

20

AMBIENT TEMPERATURE (˚C)

(Typ. V

G7151-16

(Typ. Ta=25

R=10 mV)

˚C

)

■ Dark current vs. reverse voltage

10000

G7150-16

G7151-16

REVERSE VOLTAGE (V)

KIRDB0042EA

KMIRB0013EA

1000

100

DARK CURRENT (pA)

10

1

0.01 0.1 1 10

(Typ. Ta=25 ˚C)

KIRDB0254EA

G7150-16 G7151-16

22.9 ± 0.3

ACTIVE AREA
(16 ×) 0.45 × 1

7.5 ± 0.2

INDEX MARK

2.2 ± 0.34.0 MIN.

2.45 ± 0.15 0.46

PIN No.

DETECTOR

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

2

PIN No.
1
3
5
7
9

DETECTOR

KC

11
13
15
16

1.0 ± 0.2

0.5 ± 0.1 0.6 ± 0.3

0.25

PHOTOSENSITIVE
SURFACE

WINDOW

1.1 ± 0.2

DETECTOR

PIN No.

14
12

KC

10

8

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed f or possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

PIN No.

DETECTOR

6
4
2

KIRDA0144EB KIRDA0030ED

Cat. No. KIRD1043E04
May 2003 DN