HAMAMATSU G7096-01, G7096, G4176-01, G4176 Datasheet

ULTRAFAST MSM PHOTODETECTORS

p

G4176 SERIES (GaAs)

PRELIMINARY DATA

Ultrafast response of several tens picosecond

FEATURES

Ultrafast response
G4176 : tr , tf = 30 ps (Typ.)
G7096 : t
Low dark current
G4176 : 100 pA (Ta=25
Large photosensitive area
200 µm

APPLICATIONS

Optical high-speed waveform measurements
Optical communications

= 40 ps (Typ.)

r

°C)

G7096 SERIES (InGaAs)

G4176
G7096

G4176-01
G7096-01

DESCRIPTION

HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.
The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark
current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps.
Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than
other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM
Photodetectors are suited for measurements of optical high-speed waveform and optical communications.
There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and
the polarity of an output signal depends on its connection.
Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial
metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176­01 & G7096-01 is a TO-18, which is very common.
An optical fiber or connector input types are available as a custom option. Contact your local representative for
more information.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

ecifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.

S

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs)

,

G4176 SERIES

G7096 SERIES (InGaAs)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Item

Maximum Bias Voltage

Maximum Light Input

Pulsed Light

CW to Pulsed Light

Operating Temperature

Storage Temperature

Symbol

V

b

Φ

T

op(a)

T

stg

Condition

Pulse width

Pulse width

1ns

1ns

Value

10

50

5

-40 to +85

-40 to +100

GENERAL CHARACTERISTICS (Ta=25°C)

Item

Spectral Response Range

Peak Response Wavelength

Effective Sensitive Area

Symbol

λ

λ

p

A

Condition

V

= 7 V

b

V

= 7 V

b

Chip Size

Package

G4176

G4176-01

Figure 1: Optical Pulse Response

G4176

(Including time response of light source, bias-tee and oscilloscope)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Output (arb. unit)

0.3

0.2

0.1

0

Value

450 to 870

850

0.2 0.2

1 1

TO-5

(Unified with SMA connector)

TO-18

(Vb = 7 V)

Unit

V

mW

mW

°C

°C

Unit

nm

nm

mm

mm

ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V)

Radiant sensitivity

Dark Current

*

NEP

G4176

G4176-01

Terminal Capacitance

G4176

G4176-01

Rise Time

G4176

2

G4176-01

2

Fall Time

G4176

G4176-01

*Noise Equivalent Power
**Value on Chip

G4176-01

(Including time response of light source, assembly circuit and oscilloscope)

Output (arb. unit)

Item

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Symbol

**

S

I

d

C

t

t

r

t

f

Condition

λ = 850 nm

λ = 850 nm

10 to 90 %

90 to 10 %

0.2 X 10

0.2 X 10

Min.

0.2

-

-

-

-

-

-

-

-15

-15

Value

Typ.

0.3

100

3 X 10

4 X 10

0.3

0.5

30

50

30

50

-15

-15

Max.

-

300

-

-

0.4

0.6

40

80

40

80

Unit

A/W

pA

W/Hz

pF

ps

ps

1/2

(Vb = 7 V)

Time (0.1ns/

Figure 2: Spectral Response

0

10

-1

10

-2

10

Radiant Sensitivity (A/W)

-3

10

500300 900700600400 1000800

div

)

(Vb = 7 V)

Time (0.1ns/

div

)