HAMAMATSU G6849-01, G6849 Datasheet

PHOTODIODE
InGaAs PIN photodiode
G6849 series
Quadrant type
Features
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Active area G6849 : f2 mm quadrant element G6849-01: f1 mm quadrant element
l
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High reliability
Applications
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Spot light position detection
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Measurement equipment
General ratings
Parameter G6849 G6849-01 Unit
Package TO-5 ­Active area
2/quadrant
φ
1/quadrant
φ
mm
Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Reverse voltage V Operating temperature Topr -40 to +85 Storage temperature Tstg -55 to +125
R
5V
C
°
C
°
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter Symbol Condition
Spectral response range Peak sensitivity wavelength
Photo sensitivity S
Dark current I
Cut-off frequency fc
Terminal capacitance Ct VR=1 V, f=1 MHz - 100 - - 20 - pF Shunt resistance Rsh VR=10 mV - 50 - - 200 ­Detectivity Noise equivalent power NEP
λ
p
λ
=1.3 µm
λ
=1.55 µm
λ
D
VR=1 V - 0.5 5 - 0.15 1.5 nA
R
V
=1 V, RL=50
=1.3 µm, -3 dB
λ
D
λ=λ λ=λ
p p
Min. Typ. Max. Min. Typ. Max.
G6849 G6849-01
0.9 to 1.7
-
- 1.55 - - 1.55 - µm
0.9 - 0.9 -
0.95 - 0.95 -
- 30 - - 120 - MHz
- 5 × 10
- 2 × 10
--
12
- - 5 × 10
-14
- - 1 × 10
0.9 to 1.7
12
-14
m
- cm·Hz
-W/Hz
Unit
A/W
M
1/2
/W
1/2
1
InGaAs PIN photodiode
G6849 series
Spectral response
1
0.5
PHOTO SENSITIVITY (A/W)
0
0.8 1.0 1.2 1.4 1.6 1.8
0.6
WAVELENGTH (µm)
Terminal capacitance vs. reverse voltage
10 nF
1 nF
G6849
100 pF
10 pF
TERMINAL CAPACITANCE
G6849-01
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C, f=1 MHz)
2.0
KIRDB0002EB
Photo sensitivity temperature characteristic
2
1
0
TEMPERATURE COEFFICIENT (%/˚C)
-1
1.0 1.2 1.4 1.6 1.80.8
WAVELENGTH (µm)
Shunt resistance vs. ambient temperature
100 G
10 G
1 G
100 M
SHUNT RESISTANCE
10 M
G6849
(Typ. V
G6849-01
(Typ. Ta=25
R=10 mV)
˚C
)
KIRDB0042EA
Dark current vs. reverse voltage
1 µA
100 nA
10 nA
1 nA
DARK CURRENT
100 pA
10 pA
0.01 0.1 1 10 100
G6849
G6849-01
REVERSE VOLTAGE (V)
(Typ. Ta=25
˚C)
KMIRB0016EB
1 pF
0.01 0.1 1
REVERSE VOLTAGE (V)
Dimensional outlines (unit: mm)
10
KMIRB0015EB
1 M
-40 -20 0 40 60 80 100
20
AMBIENT TEMPERATURE (˚C)
KMIRB0014EA
G6849 G6849-01
0.45 LEAD
9.1 ± 0.2
8.1 ± 0.2
WINDOW
5.9 ± 0.2
5.84
(2.5 ± 0.3)0.8 ± 0.5
3.1 ± 0.6
0.03
DETAILS OF
PHOTODIODE
4.1 ± 0.2
13.0 ± 2.0
ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON)
1
c
bd
a
9.1 ± 0.2
8.1 ± 0.1
ACTIVE AREA
PHOTOSENSITIVE SURFACE
0.45 LEAD
WINDOW
5.9 ± 0.1
5.84
(2.5 ± 0.3)0.8 ± 0.5
3.1 ± 0.6
2
c
bd
a
0.1
DETAILS OF
PHOTODIODE
4.1 ± 0.2
13.0 ± 2.0
ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON)
KIRDA0059EA KIRDA0143EA
Information furnished by HAMAMATSU is believed to be reliable. How ever, no responsibility is assumed for possible inaccuracies or omissions . Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
ACTIVE AREA
PHOTOSENSITIVE SURFACE
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KIRD1042E02 Feb. 2002 DN
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