HAMAMATSU G6742-01, G6742-003 Datasheet

PHOTODIODE

InGaAs PIN photodiode

G6742 series

Surface-mount type

Features

l

Small chip carrier package

l

High reliability

l

Low price

■

General ratings

Parameter G6742-003 G6742-01 Unit

Package Ceramic base ­Active area

Absolute maximum ratings

■

Parameter Symbol G6742-003 G6742-01 Unit

Reverse voltage VR Max. 20 10 V
Operating
temperature
Storage temperature Tstg -55 to +125 *
* No condensation

Topr -40 to +85 *

0.3

φ

Applications

l

Laser diode monitors

φ

1.0

mm

°

°

C

C

■

Electrical and optical characteristics (Ta=25 °C)

Parameter Symbol Condition

Spectral response
range
Peak sensitivity
wavelength

Photo sensitivity S

Dark current I

Cut-off frequency fc

Terminal
capacitance

Shunt resistance Rsh VR=10 mV - 1000 - - 100 ­Detectivity
Noise equivalent

power

λ

p

λ

D

Ct

D

NEP

=1.3 µm

λ

=1.55 µm

λ

VR=5 V - 0.3 1.5 - 1 5 nA
V

∗

=5 V, RL=50

R

-3 dB
f=1 MHz
VR=5 V

p

λ=λ

p

λ=λ

Ω

G6742-003 G6742-01

Min. Typ. Max. Min. Typ. Max.

-

0.9 to 1.7

- 1.55 - - 1.55 - µm

0.8 0.9 - 0.8 0.9 -

0.85 0.95 - 0.85 0.95 -

-300- - 35 - MHz

- 10 - - 90 - pF

- 5 × 10

- 4 × 10

12

-15

--

- - 5 × 10

- - 2 × 10

0.9 to 1.7

12

-14

Unit

-µm

A/W

M

Ω

- cm · Hz

-W/Hz

1/2

/W

1/2

InGaAs PIN photodiode

G6742 series

■ ■

■ Spectral response

■ ■

1

0.5

PHOTO SENSITIVITY (A/W)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

■■

■Terminal capacitance vs.

■■

reverse voltage

10 nF

1 nF

100 pF

G6742-01

10 pF

TERMINAL CAPACITANCE

1 pF

G6742-003

(Typ. Ta=25

(Typ. Ta=25 ˚C)

˚C

, f=1 MHz)

■ ■

■ Photo sensitivity temperature

■ ■

characteristic

(Typ. Ta=25

(Typ. V

R

=10 mV)

˚C

2

1

0

TEMPERATURE COEFFICIENT (%/˚C)

-1

2.0

KIRDB0002EB

■ ■

■ Shunt resistance vs. ambient temperature

■ ■

100 GΩ

10 GΩ

1 GΩ

100 MΩ

SHUNT RESISTANCE

10 MΩ

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

G6742-003

G6742-01

■ ■

■ Dark current vs. reverse voltage

■ ■

)

KIRDB0042EA

1 µA

100 nA

10 nA

1 nA

DARK CURRENT

100 pA

10 pA

G6742-01

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

(Typ. Ta=25

G6742-003

˚C)

KIRDB0150EA

100 fF

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

■ ■

■ Dimensional outlines (unit: mm, tolerance: ±0.1)

■ ■

0.15 0.15

1.7

ACTIVE AREA

0.3

0.3

2.0

KIRDB0209EA KIRDB0210EA

0.6 MAX.

0.2

4.0

2.0

1 MΩ

-40 -20 0 40 60 80 100

0.20.2

0.50.5

2.6

0.3

ANODE
CATHODE
GOLD PLATING PART

20

AMBIENT TEMPERATURE (˚C)

KIRDA0057EA

ACTIVE AREA

1

G6742-01G6742-003

0.15 0.15

1.7

2.0

0.6 MAX.

0.3

4.0

2.0

0.20.2

0.50.5

2.6

0.3

ANODE
CATHODE
GOLD PLATING PART

KIRDA0058EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Cat. No. KIRD1016E01
Mar. 2001 DN