HAMAMATSU C7973 Datasheet

IMAGE SENSOR

CCD multichannel detector head

C7973

Designed for back-thinned CCD area image sensor

C7973 is a high sensitivity multichannel detector head for use with back-thinned FFT-CCD area image sensors (S7963, S7964, S7965) that offer
high UV sensitivity and quantum efficiency. C7973 incorporates a low-noise driver/amplifier circuit that provides reliable operation from simple
external signals. C7973 includes a highly stable temperature controller that cools the sensor to a preset temperature level (Ts= -10 ˚C) as soon as
the power is turned on. If the cooler fails and causes internal circuitry to overheat, the built-in protection circuit automatically turns off the power to
the thermoelectric cooler. Despite its compact size, the housing configuration is designed for good heat dissipation, and threaded mounting holes
on the front panel allow connections to other devices such as monochrometers.

Features

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Designed for back-thinned CCD area image sensor *

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Line binning operation/area scanning operation *

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Driver/amplifier circuit for low noise CCD operation

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Highly stable temperature controller
Cooling temperature: -10 ± 0.05 ˚C
(Ta=10 to 35 ˚C)

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Simple signal input operation

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Compact configuration

The table below shows CCD area image sensors applicable for C7973.
Since C7973 does not include aCCD area image sensor, so select the desired sensor and order itseparately.

CCD area image sensor

Type No. Number of pixels Number of active pixels

S7963 80 × 72 64 × 64 1.536 × 1.536
S7964 124 × 56 108 × 48 2.592 × 1.152
S7965 232 × 56 216 × 48 5.184 × 1.152

*1: In normal CCD image sensors that receive light from the front surface, the active area is covered with electrodes for charge transfer.

These electrodes cut off UV radiation incident on the image sensor and also reduce the quantum efficiency. In contrast, back­thinned CCD image sensors have a unique structure in which the back of the active area is finely ground to allow light to enter from
the back surface. This structure ensures high UV sensitivity and quantum efficiency because incident light need not pass through the
electrodes.

*2: The FFT-CCD was originally designed as a two-dimensional image sensor. However, it can be operated like a linear image sensor

having a large active area by transferring all the pixel signals in the vertical direction to the horizontal register (this is referred to as
line binning).

1

2

Applications

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Fluorescence spectroscopy

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Raman spectroscopy

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Other low-light-level detection

Active area

[mm (H) × mm (V)]

1

CCD multichannel detector head

■ Absolute maximum ratings

Parameter Symbol Min. Typ. Max. Unit

Supply voltage (for digital circuitry) V

D1

V

A1+

V

A1-

V

A2

V

D2

-0.5 - +7

- - +18

- - -18Supply voltage (for analog circuitry)

- - +30

--+7
Vp- -+7Supply voltage
V

F

Digital input voltage - - - V

--+14

D (1, 2)

Operating temperature Topr +10 - +35
Storage temperature Tstg 0 - +70

■ Electrical characteristics
(Ta=25 °C, V

,

=+5 V, V

Digital input

CLK frequency f
Data video readout frequency fv - - f
Start pulse width tst 1/f

Digital output

Power supply operating conditions

Voltage

Current

)

+

=+15 V, V

)

-

= -15 V, V) =+24 V, V, =+5 V, Vp=+5 V, V.=+12 V, unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit

High level V
Low level V

High level (Io= -6 mA) V
Low level (Io=+6 mA) V

Digital circuitry V

V

V

Other

IH

IL

CLK

IH

IL

D

A1+

A1-

VA2
V

D2

Vp +4.75 +5.0 +5.25 V
V

F

+2.0 - +5.0 V

-0.5 - +0.8 V

- - 1 MHz

CLK

- - s

+2.0 - - V

--+0.8V

+4.75 +5.0 +5.25 V
+14.5 +15.0 +15.5 V

-14.5 -15.0 -15.5 VAnalog circuitry
+23.5 +24.0 +24.5 V
+4.75 +5.0 +5.25 V

+11.75 +12.0 +12.75 V
VD1 (+5 VDC) - - - +200 mA
V

(+15 VDC) - - - +100 mA

A1+

V

(-15 VDC) - - - -100 mA

A1-

VA2 (+24 VDC) - - - +30 mA
VD2 (+5 VDC) - - - +30 mA
Vp (+5 VDC) Ta=25 °C - - +1.0 +2.0 A
VF (+12 VDC) - - +100 - mA

/4 Hz

CLK

C7973

V

°C

■ Electrical and optical characteristics
(Ta=25 °C, Ts= -10 °C, V

,

=+5 V, V

Parameter Symbol Min. Typ. Max. Unit

Spectral response range

Full well capacity

Conversion gain *

3

Dark current DS - 60 180 e-/pixel/s
Readout noise Nr - 30 60 e-rms
Dynamic range DR - 100,000 - ­Photo response non-uniformity *

*3: Including the circuit gain.
*4: Measured at 50 % of the full well capacity.

)

+

=+15 V, V

Vertical - 300,000 ­Horizontal

4

)

-

= -15 V, V) =+24 V, V, =+5 V, Vp=+5 V, V.=+12 V)

l

Fw

-

- 600,000 -

200 to

1100

Sv - 4 - µV/e

PRNU - ±3 ±10 %

-nm

-

e

-

2

CCD multichannel detector head

C7973

■ Specifications for temperature controller (C7041)
(Ta=25 °C, Ts= -10 °C, V

Parameter *

,

=+5 V, V

5

Cooling temperature Ts -11 -10 -9 °C
Temperature control range
Power dissipation of TE-cooler element Pp - - 2 W
Cool down time to reset temperature to - - 5 min.
Setting temperature for overheat protection *

*5: Other functions include error display, automatic power off, and detection of electrical opens and shorts by the thermosensor.
*6: Temperature at back side of housing (between housing and fan).

)

+

=+15 V, V

)

-

= -15 V, V) =+24 V, V, =+5 V, Vp=+5 V, V.=+12 V)

Symbol Min. Typ. Max. Unit

DTs

6

To - +45 - °C

-0.05 - +0.05 °C

■ Spectral response (without window)

100

90

80

70

60

50

40

30

FRONT-SIDED
(UV COAT)

20

QUANTUM EFFICIENCY (%)

10

0

200 400 600 800 1000 1200

FRONT-SIDED

BACK-THINNED

WAVELENGTH (nm)

■ Device structure

THINNING

(Typ. Ta=25 ˚C)

KMPDB0058EA

■ Dark current vs. temperature

10000

1000

/pixel/s)

-

100

10

1

DARK CURRENT (e

0.1

-50 -40 -30

-20

0-10 10 20 30

TEMPERATURE (˚C)

(Typ.)

KMPDB0037EA

THINNING

RG

RD

OD

P2V

56

P2H

P1V

10

11

4 BEVEL

M

4 BLANK4 BLANK

BEVELBEVEL

ACTIVE PIXEL

TOTAL PIXEL

4 BEVEL

KMPDC0134EA

SS

13

N

4
3
2
1

2

3

4

SGOGOS

4

P1H

ACTIVE PIXEL

TOTAL PIXEL

1

12

3

2

14

3