HAMAMATSU C5460-01, C5460 Datasheet

MODULE

APD module

C5460 series

APD module integrated with peripheral circuits

Features

l

Uses high sensitivity APD
Two types of APDs with different active areas (φ1.5 mm,
φ3.0 mm) are provided.

l

On-board high sensitivity circuit optimized for APD evaluation
An APD and a low-noise current-to-voltage amplifier circuit
are mounted on a compact PC board. The current-to-voltage
amplifier circuit features a low-noise configuration allowing
low-light-level detection.

l

Detects optical signals from fixed light (DC light)
C5460 detects optical signals from fixed light (DC light) to
10 MHz pulsed light making it well suited for bar code
readers and film scanners. C5460-01 covers a narrower
bandwidth from fixed light (DC light) to 100 kHz pulsed light,
but provides an excellent NEP of 20 fW/Hz
temperature, making it suitable for fluorescence measurement
and particle counters where low-light-level detection is essential.

l

Built-in temperature-compensated bias power supply
The bias power supply is controlled with a thermosensor to keep
the APD gain constant. Gain variations are typically held within
±2.5 % at an ambient temperature of 25 ±10 ˚C. Ripple noise
usually inherent to high-voltage power supplies is also minimized.

l

Compact and lightweight
The board is no larger than a typical business card.

l

Low price

l

Custom models with different dimensions and specifications
are available

1/2

in the room

Applications

l

Evaluation of APD

l

Fluorescence measurement

l

Bar code readers

l

Particle counters

l

Film scanners

Selection guide

■

Parameter C5460 C5460-01 Unit

Active area

Photo sensitivity 1.5 × 10
Frequency bandwidth DC to 10 M DC to 100 k Hz

■ Block diagram

HIGH VOLTAGE
GENERATOR

+200 V +12 V

VOLTAGE
CONTROLLER

LOW-NOISE CURRENT-TO-VOLTAGE AMPLIFIER CIRCUIT

APD

THERMOSENSOR

1.5

φ

6

±12 V

TEMPERATURE MONITOR

BNC CONNECTOR

3.0

φ

-1.5 × 10

KACCC0028EA

8

mm

V/W

APD module

C5460 series

■ General ratings

Parameter Symbol Condition

Power supply Vs

Current dissipation -

+12 V +11.4 +12 +12.6 +11.4 +12 +12.6 V

-12 V -11.4 -12 -12.6 -11.4 -12 -12.6 V

+12 V - +30 +45 - +35 +45 mA

-12 V - -11 -16 - -11 -16 mA

Min. Typ. Max. Min. Typ. Max.

Board dimensions - 80 × 50 × 23 80 × 50 × 23 mm
Weight - 52 52 g

C5460 C5460-01

Unit

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Value Unit

Positive supply voltage Vp +16 V

Negative supply voltage Vn -16 V
Operating temperature Topr 0 to +60 °C
Storage temperature Tstg -30 to +70 °C

■ Specification (Typ. Ta=25 °C, Vcc=±12 V, unless otherwise noted)

Photoelectric section (Si APD)

Parameter Symbol Condition C5460 C5460-01 Unit

Active area A

Spectral response range
Peak sensitivity wavelength

λ

Photo sensitivity S

Temperature stability
of gain *

λ

p 800 nm

=800 nm,

λ

Gain=1
25 ± 10 °C,

­Gain=30

φ

1.5

3.0 mm

φ

400 to 1000 nm

0.5 A/W

±2.5 Typ., ±5 Max. %

High-speed amplifier section (C5460)

Parameter Symbol Condition Min. Typ. Max. Unit

Cut-off frequency fc

Noise equivalent power NEP

Feedback resistance - - 10 - k

Photoelectric sensitivity * -

High band, -3 dB 9 10 - MHz
Low band, -3 dB - DC - -

f=10 MHz

=800 nm

λ

- 0.2 0.4 pW/Hz

Ω

APD include,

=800 nm

λ

1.4 × 10

6

1.5 × 10

6

1.6 × 10

6

V/W

Gain=30

Maximum input light level - 5.0 6.0 - µW
Minimum detection limit - - 0.8 1.6 nWr.m.s.

High-speed amplifier section (C5460-01)

Parameter Symbol Condition Min. Typ. Max. Unit

Cut-off frequency fc

Noise equivalent power NEP

Feedback resistance - - 10 - M

Photoelectric sensitivity * -

Maximum input light level - 0.05 0.06 - µW
Minimum detection limit - - 0.005 0.01 nWr.m.s.

* Gain is set to 30 at the factory prior to shipping.

High band, -3 dB 80 100 - kHz
Low band, -3 dB - DC - -

f=100 kHz

=800 nm

λ

APD include,

=800 nm

λ

- 0.02 0.04 pW/Hz

-1.4 × 10

8

-1.5 × 10

8

-1.6 × 10

8

V/W

Gain =30

Ω

1/2

1/2