HAMAMATSU C4777-01, C4777 Datasheet

MODULE

APD module

C4777 series

APD module integrated with peripheral circuits

Features

l

Uses high sensitivity APD
Two types of APDs with different active areas
(φ0.5 mm, φ3.0 mm) are provided.

l

Choice of high sensitivity type and low-light-level detection type
C4777 detects optical signals from 10 kHz to 100 MHz
pulsed light and is suitable for spatial light transmission and
rangefinder applications. C4777-01 provides a high photo­electric sensitivity of 1.25 × 10
making it excellent for fluorescence measurement and NOx
monitors where low-light-level detection is essential.

l

Built-in temperature control circuit
An APD chip, thermoelectric cooler and thermosensor are
sealed in the same package along with the temperature
control circuit, to keep the APD chip temperature constant
and ensure stable measurements.

l

Simple operation
Operates by just connecting to a DC power supply (+5 V, ±15 V).

Selection guide

■

Parameter C4777 C4777-01 Unit

Active area
Photo sensitivity -2.5 × 10
Frequency bandwidth 10 k to 100 M DC to 5 k Hz

9

V/W and low NEP of 2 fW/Hz

f0.5 f3.0

#

Applications

l

Spatial light transmission

l

Optical communication

l

Rangefinder

l

Fluorescence measurement

1/2

,

l

NOx monitor sensor

l

Particle counters

C4777

C4777-01

-1.25 × 10

'

mm

V/W

■ Block diagram

Si APD

SIGNAL LIGHT

THERMOSENSOR

FIRST AMPLIFIER

TEMPERATURE

CONTROL CIRCUIT

BIAS CONTROL CIRCUIT

THERMOELECTRIC COOLER

HIGH VOLTAGE

POWER SUPPLY

SIGNAL OUTPUT

POWER SUPPLY

KACCC0099EA

1

APD module

C4777 series

■ Absolute maximum ratings

Parameter Symbol Condition Value Unit

Positive supply voltage - +7 V
Positive supply voltage - +16 V
Negative supply voltage - -16 V
Input power - 10 mW
Operating temperature Topr 10 to 40 °C
Storage temperature Tstg -10 to +60 °C
Operating/storage humidity - No condensation 70 % RH below -

■ Specification (Typ. Ta=25 °C, Vcc=+5 V, +15 V, unless otherwise noted)

● Photoelectric section (APD)

Parameter Symbol Condition C4777 C4777-01 Unit

Active area A f0.5 f3.0 mm
Peak sensitivity wavelength
Spectral response range l 400 to 1000 nm
Photo sensitivity S
Gain M l=800 nm 100 50 times
Thermoelectric cooler - One-stage Two-stage ­Cooling temperature - 0 °C
Temperature stability of gain - Ta=10 to 40 °C ±3 %

lp

l=800 nm, M=1

800 nm

0.5 A/W

● Signal amplification section

C4777

Parameter Symbol Condition Min. Typ. Max. Unit

Cut-off frequency

Noise equivalent power NEP
Feedback resistance Rf - 10 - k9

Photoelectric sensitivity -

Output impedance - - 50 - 9
Maximum input light level - 0.6 0.8 - µW
Minimum detection limit - - 0.8 1.2 nWr.m.s.

High band 95 100 - MHz
Low band

fc -3 dB

l=800 nm

APD include, M=100
l=800 nm

-1015kHz

- 80 120 fW/Hz

-2.0 -2.5 -3.0

× 10# V/W

C4777-01

Parameter Symbol Condition Min. Typ. Max. Unit

Cut-off frequency

Noise equivalent power NEP
Feedback resistance Rf - 50 - M9

Photoelectric sensitivity -

Maximum input light level - 8.8 9.6 - nW
Minimum detection limit - - 0.2 0.4 pWr.m.s.

High band 4 5 - kHz
Low band

fc -3 dB

l=800 nm

APD include, M=50
l=800 nm

-DC- -

- 2 4 fW/Hz

-1.0 -1.25 -1.5

× 10' V/W

1/2

1/2

2