GS72108TP/J
SOJ, TSOP
Commercial Temp
Industrial Temp
256K x 8
2Mb Asynchronous SRAM
8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS
•Fast access time: 8, 10, 12, 15 ns
•CMOS low power operation: 150/125/110/90 mA at minimum cycle time.
•Single 3.3 V ± 0.3 V power supply
•All inputs and outputs are TTL-compatible
•Fully static operation
•Industrial Temperature Option: –40° to 85°C
•Package line up
J:400 mil, 36-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
The GS72108 is a high speed CMOS Static RAM organized as 262,144 words by 8 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTL-com- patible. The GS72108 is available in 400 mil SOJ and 400 mil TSOP Type-II packages.
Symbol |
Description |
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A0–A17 |
Address input |
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DQ1–DQ8 |
Data input/output |
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Chip enable input |
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CE |
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Write enable input |
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WE |
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Output enable input |
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OE |
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VDD |
+3.3 V power supply |
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VSS |
Ground |
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NC |
No connect |
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A4 |
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1 |
36 |
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A3 |
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2 |
35 |
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A2 |
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3 |
34 |
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A1 |
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4 |
33 |
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A0 |
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5 |
32 |
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6 |
31 |
CE |
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DQ1 |
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7 |
30 |
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DQ2 |
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8 |
36-pin |
29 |
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VDD |
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9 |
400 mil SOJ |
28 |
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VSS |
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10 |
27 |
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DQ3 |
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11 |
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26 |
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DQ4 |
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12 |
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25 |
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13 |
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24 |
WE |
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A17 |
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14 |
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23 |
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A16 |
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15 |
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22 |
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A15 |
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16 |
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21 |
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A14 |
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17 |
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20 |
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A13 |
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18 |
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19 |
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NC
A5
A6
A7
A8
OE
DQ8 DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
NC
NC
Rev: 1.08 7/2002 |
1/12 |
© 1999, Giga Semiconductor, Inc. |
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS72108TP/J
NC |
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1 |
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44 |
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NC |
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NC |
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2 |
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43 |
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NC |
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A4 |
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3 |
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42 |
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NC |
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A3 |
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4 |
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41 |
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A5 |
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A2 |
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5 |
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40 |
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A6 |
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A1 |
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6 |
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39 |
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A7 |
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A0 |
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7 |
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A8 |
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8 |
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37 |
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CE |
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OE |
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DQ1 |
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9 |
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36 |
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DQ8 |
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DQ2 |
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10 |
44-pin |
35 |
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DQ7 |
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VDD |
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34 |
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VSS |
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VSS |
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12 |
400 mil TSOP II |
33 |
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VDD |
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DQ3 |
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13 |
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32 |
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DQ6 |
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DQ4 |
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14 |
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31 |
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DQ5 |
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15 |
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30 |
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A9 |
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WE |
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A17 |
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16 |
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29 |
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A10 |
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A16 |
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17 |
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28 |
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A11 |
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A15 |
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18 |
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27 |
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A12 |
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A14 |
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19 |
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26 |
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NC |
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A13 |
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20 |
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25 |
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NC |
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NC |
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21 |
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24 |
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NC |
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NC |
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22 |
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23 |
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NC |
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Block Diagram
A0
Row
Decoder
Address
Input
Buffer
A17
CE
WE
OE Control
Memory Array
Column
Decoder
I/O Buffer
DQ1 DQ8
Rev: 1.08 7/2002 |
2/12 |
© 1999, Giga Semiconductor, Inc. |
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS72108TP/J |
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Truth Table |
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CE |
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OE |
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WE |
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DQ1 to DQ8 |
VDD Current |
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H |
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X |
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X |
Not Selected |
ISB1, ISB2 |
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L |
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L |
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H |
Read |
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IDD |
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L |
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X |
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L |
Write |
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L |
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H |
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H |
High Z |
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Note: X: “H” or “L”
Parameter |
Symbol |
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Rating |
Unit |
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Supply Voltage |
VDD |
–0.5 to +4.6 |
V |
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Input Voltage |
VIN |
–0.5 to VDD +0.5 |
V |
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(≤ |
4.6 V max.) |
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Output Voltage |
VOUT |
–0.5 to VDD +0.5 |
V |
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(≤ |
4.6 V max.) |
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Allowable power dissipation |
PD |
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0.7 |
W |
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Storage temperature |
TSTG |
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–55 to 150 |
oC |
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.08 7/2002 |
3/12 |
© 1999, Giga Semiconductor, Inc. |
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS72108TP/J
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
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Supply Voltage for -10/12/15 |
VDD |
3.0 |
3.3 |
3.6 |
V |
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Supply Voltage for -8 |
VDD |
3.135 |
3.3 |
3.6 |
V |
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Input High Voltage |
VIH |
2.0 |
— |
VDD +0.3 |
V |
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Input Low Voltage |
VIL |
–0.3 |
— |
0.8 |
V |
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Ambient Temperature, |
TAc |
0 |
— |
70 |
oC |
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Commercial Range |
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Ambient Temperature, |
TAI |
–40 |
— |
85 |
oC |
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Industrial Range |
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Note:
1.Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2.Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Parameter |
Symbol |
Test Condition |
Max |
Unit |
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Input Capacitance |
CIN |
VIN = 0 V |
5 |
pF |
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Output Capacitance |
COUT |
VOUT = 0 V |
7 |
pF |
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Notes:
1.Tested at TA = 25°C, f = 1 MHz
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
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Input Leakage |
IIL |
VIN = 0 to VDD |
– 1 uA |
1 uA |
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Current |
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Output Leakage |
ILO |
Output High Z |
–1 uA |
1 uA |
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Current |
VOUT = 0 to VDD |
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Output High Voltage |
VOH |
IOH = –4mA |
2.4 |
— |
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Output Low Voltage |
VOL |
ILO = +4mA |
— |
0.4 V |
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Rev: 1.08 7/2002 |
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4/12 |
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© 1999, Giga Semiconductor, Inc. |
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.