GSI GS832036T-166, GS832036T-150I, GS832036T-150, GS832036T-133I, GS832036T-133 Datasheet

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GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP
2M x 18, 1M x 32, 1M x 36
Commercial Temp Industrial Temp
36Mb Sync Burst SRAMs
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
3.3 V
2.5 V Flow
Through
2-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
Curr (x18)
Curr (x32/x36)
2.3
4.0
365 430
360 420
6.0
7.0
200 230
200 225
2.5
4.4
335 390
330 380
6.5
7.5
200 230
200 225
3.0
3.5
5.0
6.0
300
265
350
305
295
260
340
295
7.5
8.51010101115ns
8.5
180
180
195
195
180
180
195
195
3.8
6.6
240 280
235 270
180 195
180 195
4.0
7.5nsns
220 245mAmA
215 235mAmA
ns
135 145mAmA
130 145mAmA
250 MHz–133 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising­edge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS832018/32/36T operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V compatible. Separate output power (V
from the internal circuits and are 3.3 V and 2.5 V compatible.
) pins are used to decouple output noise
DDQ
Functional Description
Applications
The GS832018/32/36T is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst
Rev: 1.00 10/2001 1/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832018 100-Pin TQFP Pinout
A6
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GS832018/32/36T-250/225/200/166/150/133
DD
E3
E1
A7
E2
BB
BA
NC
NC
SS
V
V
BW
GW
G
CK
ADSC
A8
ADV
ADSP
A9
NC NC NC
V
DDQ
V
NC
NC DQB1 DQB2
V
V
DDQ
DQB3 DQB4
V
NC
V DQB5 DQB6
V
DDQ
V DQB7 DQB8
DQB9
NC
V
V
DDQ
NC NC NC
SS
SS
FT
DD
SS
SS
SS
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
2M x 18
Top View
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A20 NC NC V
DDQ
V
SS
NC DQA9 DQA8 DQA7 V
SS
V
DDQ
DQA6 DQA5 V
SS
NC V
DD
ZZ DQA4 DQA3 V
DDQ
V
SS
DQA2 DQA1 NC NC V
SS
V
DDQ
NC NC NC
SS
A5
A4
A3
A2
A1
A0
NC
LBO
A19
DD
A17
A18
V
V
A11
A10
A12
A13
A14
A16
A15
Rev: 1.00 10/2001 2/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832032 100-Pin TQFP Pinout
A6
A7
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GS832018/32/36T-250/225/200/166/150/133
DD
E3
E1
E2
BB
BA
BC
BD
SS
V
V
BW
GW
G
CK
ADSC
A8
ADV
ADSP
A9
NC DQC8 DQC7
V
DDQ
V
SS
DQC6 DQC5 DQC4 DQC3
V
V
DDQ
DQC2 DQC1
FT
V
DD
NC
V
SS
DQD1 DQD2
V
DDQ
V DQD3 DQD4
DQD5 DQD6
V V
DDQ
DQD7 DQD8
NC
SS
SS
SS
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
1M x 32
Top View
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
NC DQB8 DQB7 V
DDQ
V
SS
DQB6 DQB5 DQB4 DQB3 V
SS
V
DDQ
DQB2 DQB1 V
SS
NC V
DD
ZZ DQA1 DQA2 V
DDQ
V
SS
DQA3 DQA4 DQA5 DQA6 V
SS
V
DDQ
DQA7 DQA8 NC
SS
A5
A4
A3
A2
A1
A0
NC
LBO
A19
DD
A18
V
V
A11
A17
A10
A12
A13
A14
A16
A15
Rev: 1.00 10/2001 3/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832036 100-Pin TQFP Pinout
A6
A7
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GS832018/32/36T-250/225/200/166/150/133
DD
E3
E1
E2
BB
BA
BC
BD
SS
V
V
BW
GW
G
CK
ADSC
A8
ADV
ADSP
A9
DQC9 DQC8 DQC7
V
DDQ
V
SS
DQC6 DQC5 DQC4 DQC3
V
SS
V
DDQ
DQC2 DQC1
FT
V
DD
NC
V
SS
DQD1 DQD2
V
DDQ
V DQD3 DQD4
DQD5 DQD6
V
V
DDQ
DQD7 DQD8 DQD9
SS
SS
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
1M x 36
Top View
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
DQB9 DQB8 DQB7 V
DDQ
V
SS
DQB6 DQB5 DQB4 DQB3 V
SS
V
DDQ
DQB2 DQB1 V
SS
NC V
DD
ZZ DQA1 DQA2 V
DDQ
V
SS
DQA3 DQA4 DQA5 DQA6 V
SS
V
DDQ
DQA7 DQA8 DQA9
SS
A5
A4
A3
A2
A1
A0
NC
LBO
A19
DD
V
V
A18
A11
A10
A12
A13
A14
A16
A17
A15
Rev: 1.00 10/2001 4/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
TQFP Pin Description
Pin Location Symbol Type Description
37, 36 A0, A1 I Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43, 42
80 A20 I Address Input (x18 version) 39 A19 I Address Input
63, 62, 59, 58, 57, 56, 53, 52 68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
51, 80, 1, 30
51, 80, 1, 30 NC No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
51, 52, 53, 56, 57
75, 78, 79, 95, 96,
1, 2, 3, 6, 7,
25, 28, 29, 30
87 BW I Byte WriteWrites all enabled bytes; active low
93, 94 BA, BB I Byte Write Enable for DQA, DQB Data I/Os; active low
95, 96 BC, BD I
89 CK I Clock Input Signal; active high 88 GW I Global Write EnableWrites all bytes; active low
98, 92 E1, E3 I Chip Enable; active low
97 E2 I Chip Enable; active high 86 G I Output Enable; active low 83 ADV I Burst address counter advance enable; active low
84, 85 ADSP, ADSC I Address Strobe (Processor, Cache Controller); active low
64 ZZ I Sleep Mode control; active high 14 FT I Flow Through or Pipeline mode; active low 31 LBO I Linear Burst Order mode; active low
15, 41, 65, 91
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
4, 11, 20, 27, 54, 61, 70, 77
16, 38, 39, 66 NC No Connect
GS832018/32/36T-250/225/200/166/150/133
A2–A18 I Address Inputs
DQA1–DQA8 DQB1–DQB8 DQC1–DQC8 DQD1–DQD8
DQA9, DQB9,
DQC9, DQD9
DQA1–DQA9 DQB1–DQB9
NC No Connect (x18 Version)
V
DD
V
SS
V
DDQ
I/O Data Input and Output pins (x32, x36 Version)
I/O Data Input and Output pins (x36 Version)
I/O Data Input and Output pins (x18 Version)
Byte Write Enable for DQC, DQD Data I/Os; active low
(x32, x36 Version)
I Core power supply I I/O and Core Ground I Output driver power supply
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Rev: 1.00 10/2001 5/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS832018/32/36 Block Diagram
A0An
LBO ADV
CK ADSC
ADSP GW
BW
BA
Register
D Q
A0
A1
D0 D1
Counter
Load
Register
D Q
Q0 Q1
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GS832018/32/36T-250/225/200/166/150/133
A0 A1
A
Memory
Array
Q D
FT
E1 E2 E3
G
BB
BC
BD
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
36
4
DQ
Register
36
Register
DQ
ZZ
Note: Only x36 version shown for simplicity.
Power Down
Control
1
DQx0DQx9
Rev: 1.00 10/2001 6/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Linear Burst Sequence
I
Mode Pin Functions
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GS832018/32/36T-250/225/200/166/150/133
Mode Name
Burst Order Control LBO
Output Register Control FT
Power Down Control ZZ
Note: There is a pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above tables.
Pin
Name
State Function
L Linear Burst
H Interleaved Burst
L Flow Through
H or NC Pipeline
L or NC Active
H
Standby, IDD = I
SB
Burst Counter Sequences
nterleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 10 11 00
3rd address 10 11 00 01
1st address 00 01 10 11
2nd address 01 00 11 10
3rd address 10 11 00 01
A[1:0] A[1:0] A[1:0] A[1:0]
4th address 11 00 01 10
Note: The burst counter wraps to initial state on the 5th clock.
4th address 11 10 01 00
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.00 10/2001 7/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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GS832018/32/36T-250/225/200/166/150/133
Byte Write Truth Table
Function GW BW BA BB BC BD Notes
Read H H X X X X 1
Read H L H H H H 1 Write byte a H L L H H H 2, 3 Write byte b H L H L H H 2, 3 Write byte c H L H H L H 2, 3, 4 Write byte d H L H H H L 2, 3, 4
Write all bytes H L L L L L 2, 3, 4 Write all bytes L X X X X X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Rev: 1.00 10/2001 8/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Synchronous Truth Table
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GS832018/32/36T-250/225/200/166/150/133
Operation
Deselect Cycle, Power Down None X H X X L X X High-Z
Deselect Cycle, Power Down None X L F L X X X High-Z
Deselect Cycle, Power Down None X L F H L X X High-Z
Read Cycle, Begin Burst External R L T L X X X Q
Read Cycle, Begin Burst External R L T H L X F Q Write Cycle, Begin Burst External W L T H L X T D
Read Cycle, Continue Burst Next CR X X H H L F Q
Read Cycle, Continue Burst Next CR H X X H L F Q
Write Cycle, Continue Burst Next CW X X H H L T D
Write Cycle, Continue Burst Next CW H X X H L T D Read Cycle, Suspend Burst Current X X H H H F Q Read Cycle, Suspend Burst Current H X X H H F Q Write Cycle, Suspend Burst Current X X H H H T D Write Cycle, Suspend Burst Current H X X H H T D
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Address
Used
Diagram
5
Key
E1
E
2
ADSP ADSC ADV
W
3
DQ
4
State
Rev: 1.00 10/2001 9/27 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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