GS78116B
BGA
Commercial Temp
Industrial Temp
512K x 16
8Mb Asynchronous SRAM
10, 12, 15 ns 3.3 V VDD
Features
•Fast access time: 10, 12, 15 ns
•CMOS low power operation: 300/250/220/180 mA at minimum cycle time
•Single 3.3 V ± 0.3 V power supply
•All inputs and outputs are TTL-compatible
•Fully static operation
•Industrial Temperature Option: –40° to 85°C
•14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package
Description
The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. The GS78116 operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS78116 is available in 14 mm x 22 mm BGA package.
Pin Descriptions
Symbol |
Description |
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A0 to A18 |
Address input |
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DQ1 to DQ16 |
Data input/output |
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CE |
Chip enable input |
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WE |
Write enable input |
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OE |
Output enable input |
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VDD |
+3.3 V power supply |
VSS |
Ground |
NC |
No connect |
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Block Diagram
A0 |
Row |
Memory Array |
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Decoder |
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Address |
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Input |
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Buffer |
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Column |
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A18 |
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Decoder |
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CE |
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WE |
Control |
I/O Buffer |
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OE |
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DQ1 |
DQ16 |
Rev: 1.02 9/2001 |
1/11 |
© 1999, Giga Semiconductor, Inc. |
For latest documentation see http://www.gsitechnology.com.
GS78116B
512K x 16 Async SRAM in 119-Bump, 14 mm x 22 mm
Top View
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1 |
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3 |
4 |
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5 |
6 |
7 |
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A |
NC |
A15 |
A14 |
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A16 |
A13 |
A12 |
NC |
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NC, |
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B |
A11 |
A10 |
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CE |
A9 |
A8 |
NC |
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VSS |
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C |
NC |
NC |
VDD, |
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A17 |
VSS, |
NC |
NC |
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NC |
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D |
NC |
VDD |
VSS |
VSS |
VSS |
VDD |
NC |
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E |
DQ1 |
NC |
VDD |
VSS |
VDD |
NC |
DQ16 |
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F |
DQ2 |
VDD |
VSS |
VSS |
VSS |
VDD |
DQ15 |
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G |
DQ3 |
NC |
VDD |
VSS |
VDD |
NC |
DQ14 |
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H |
DQ4 |
VDD |
VSS |
VSS |
VSS |
VDD |
DQ13 |
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J |
VDD |
VSS |
VDD |
VSS |
VDD |
VSS |
VDD |
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K |
DQ5 |
VDD |
VSS |
VSS |
VSS |
VDD |
DQ12 |
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L |
DQ6 |
NC |
VDD |
VSS |
VDD |
NC |
DQ11 |
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M |
DQ7 |
VDD |
VSS |
VSS |
VSS |
VDD |
DQ10 |
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N |
DQ8 |
NC |
VDD |
VSS |
VDD |
NC |
DQ9 |
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P |
NC |
VDD |
VSS |
VSS |
VSS |
VDD |
NC |
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R |
NC |
NC |
NC |
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A18 |
NC |
NC |
NC |
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NC, |
T |
NC |
A7 |
A6 |
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WE |
A5 |
A4 |
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VSS |
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U |
NC |
A3 |
A2 |
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OE |
A1 |
A0 |
NC |
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Note: Bumps 1B, 7T, 3C, and 5C are actually NC’s but should be wired 3C = VDD and 1B, 7T and 5C = VSS to assure compatibility with future versions.
Rev: 1.02 9/2001 |
2/11 |
© 1999, Giga Semiconductor, Inc. |
For latest documentation see http://www.gsitechnology.com.
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GS78116B |
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Truth Table |
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CE |
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OE |
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WE |
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DQ1 to DQ8 |
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VDD Current |
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H |
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X |
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X |
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Not Selected |
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ISB1, ISB2 |
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L |
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L |
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H |
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Read |
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L |
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X |
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L |
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Write |
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IDD |
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L |
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H |
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H |
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High Z |
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Note: X: “H” or “L” |
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Absolute Maximum Ratings |
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Parameter |
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Symbol |
Rating |
Unit |
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Supply Voltage |
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VDD |
–0.5 to +4.6 |
V |
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Input Voltage |
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VIN |
–0.5 to VDD +0.5 |
V |
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(≤ 4.6 V max.) |
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Output Voltage |
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VOUT |
–0.5 to VDD+0.5 |
V |
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(≤ 4.6 V max.) |
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Allowable power dissipation |
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PD |
1.5 |
W |
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Storage temperature |
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TSTG |
–55 to 150 |
oC |
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Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
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Supply Voltage for -10/12/15 |
VDD |
3.0 |
3.3 |
3.6 |
V |
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Input High Voltage |
VIH |
2.0 |
— |
VDD +0.3 |
V |
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Input Low Voltage |
VIL |
–0.3 |
— |
0.8 |
V |
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Ambient Temperature, |
TAc |
0 |
— |
70 |
oC |
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Commercial Range |
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Ambient Temperature, |
TAi |
–40 |
— |
85 |
oC |
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Industrial Range |
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Notes:
1.Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2.Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.02 9/2001 |
3/11 |
© 1999, Giga Semiconductor, Inc. |
For latest documentation see http://www.gsitechnology.com.
GS78116B
Capacitance
Parameter |
Symbol |
Test |
Max |
Unit |
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Input Capacitance |
CIN |
VIN = 0 V |
10 |
pF |
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Output Capacitance |
COUT |
VOUT = 0 V |
7 |
pF |
Notes:
1.Tested at TA = 25°C, f = 1 MHz
2.These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
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Parameter |
Symbol |
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Test Conditions |
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Min |
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Max |
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Input Leakage |
IIL |
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VIN = 0 to VDD |
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–2 uA |
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2 uA |
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Current |
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Output Leakage |
IOL |
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Output High Z, |
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–1 uA |
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1 uA |
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Current |
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VOUT = 0 to VDD |
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Output High Voltage |
VOH |
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IOH = –4 mA |
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2.4 |
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Output Low Voltage |
VOL |
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IOL = +4 mA |
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0.4 V |
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Power Supply Currents |
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Parameter |
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Symbol |
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Test Conditions |
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0 to 70°C |
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–40 to 85°C |
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10 ns |
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12 ns |
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15 ns |
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10 ns |
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12 ns |
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15 ns |
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£ VIL |
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E |
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Operating |
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All other inputs |
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Supply |
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IDD |
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³ VIH or £ VIL |
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225 mA |
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220 mA |
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180 mA |
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270 mA |
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240 mA |
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200 mA |
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Current |
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Min. cycle time |
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IOUT = 0 mA |
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³ VIH |
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E |
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Standby |
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ISB1 |
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All other inputs |
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130 mA |
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120 mA |
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110 mA |
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150 mA |
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140 mA |
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130 mA |
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Current |
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³ VIH or £VIL |
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Min. cycle time |
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Standby |
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ISB2 |
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E ³ VDD – 0.2V |
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All other inputs |
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60 mA |
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80 mA |
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Current |
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³ VDD – 0.2 V or £ 0.2 V |
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Rev: 1.02 9/2001 |
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4/11 |
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© 1999, Giga Semiconductor, Inc. |
For latest documentation see http://www.gsitechnology.com.