GSI GS74116J-15, GS74116J-12I, GS74116J-12, GS74116J-10I, GS74116J-10 Datasheet

Rev: 2.02 3/2000 1/14 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N

GS74116TP/J/U

256K x 16

4Mb Asynchronous SRAM

8, 10, 12, 15ns

3.3V VDD

Center VDD & VSS

SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp

Features

• Fast access time: 8, 10, 12, 15ns

• CMOS low power operation: 170/145/130/110 mA at min.cycle time.

• Single 3.3V ± 0.3V power supply

• All inputs and outputs are TTL compatible

• Byte control

• Fully static operation

• Industrial Temperature Option: -40° to 85°C

• Package line up
J: 400mil, 44 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package

Description

The GS74116 is a high speed CMOS static RAM organized as
262,144-words by 16-bits. Static design eliminates the need for exter­nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74116 is avail­able in a 7.2x11.65 mm Fine Pitch BGA package, 400 mil SOJ and
400 mil TSOP Type-II packages.

Pin Descriptions

SOJ 256K x 16 Pin Configuration

Fine Pitch BGA 256K x 16 Bump Configuration

7.2x11.65mm 0.75mm Bump Pitch
Top View

Symbol Description

A0 to A17

Address input

DQ1 to DQ16 Data input/output

CE Chip enable input
LB

Lower byte enable input

(DQ1 to DQ8)

UB

Upper byte enable input

(DQ9 to DQ16)

WE Write enable input

OE Output enable input
VDD +3.3V power supply
VSS Ground

NC No connect

1 2 3 4 5 6

A LB OE A0 A1 A2 NC
B DQ16 UB A3 A4 CE DQ1
C DQ14 DQ15 A5 A6 DQ2 DQ3
D VSS DQ13 A17 A7 DQ4 VDD
E VDD DQ12 NC A16 DQ5 VSS
F DQ11 DQ10 A8 A9 DQ7 DQ6
G DQ9 NC A10 A11 WE DQ8
H NC A12 A13 A14 A15 NC

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28

27
26
25

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

16
17
18
19
20

A4
A3
A2
A1
A0

CE
DQ1
DQ2
DQ3
DQ4
VDD

VSS
DQ5
DQ6

DQ7
DQ8

WE
A15
A14
A13

A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14

DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10

Top view

21
22

24
23

A12

A11

44 pin

SOJ

A17A16

Rev: 2.02 3/2000 2/14 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N

GS74116TP/J/U

TSOP-II 256K x 16 Pin Configuration

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30

29
28

27
26
25

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

16
17
18
19
20

A4
A3
A2
A1
A0

CE
DQ1
DQ2
DQ3
DQ4
VDD

VSS
DQ5
DQ6
DQ7
DQ8

WE
A15

A14

A13

A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14

DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10

Top view

21
22

24
23

A12

A11

44 pin

TSOP II

A17A16

Memory Array

Row

Decoder

Column
Decoder

Address

Input

Buffer

Control

I/O Buffer

A0

CE

WE

OE

DQ1

A17

Block Diagram

DQ16

UB

_____

LB

_____

Rev: 2.02 3/2000 3/14 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N

GS74116TP/J/U

Note: X: “H” or “L”

Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Truth Table

CE OE WE LB UB DQ1 to DQ8 DQ9 to DQ16 VDD Current

H X X X X Not Selected Not Selected ISB1, ISB2

L L H

L L Read Read

IDD

L H Read High Z

H L High Z Read

L X L

L L Write Write
L H Write Not Write, High Z

H L Not Write, High Z Write
L H H X X High Z High Z
L X X H H High Z High Z

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Supply Voltage VDD -0.5 to +4.6 V

Input Voltage VIN

-0.5 to VDD+0.5
(≤ 4.6V max.)

V

Output Voltage VOUT

-0.5 to VDD+0.5
(≤ 4.6V max.)

V

Allowable power dissipation PD 0.7 W

Storage temperature TSTG -55 to 150

o

C

Rev: 2.02 3/2000 4/14 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N

GS74116TP/J/U

Note:

1. Input overshoot voltage should be less than VDD+2V and not exceed 20ns.

2. Input undershoot voltage should be greater than -2V and not exceed 20ns.

Notes:

1. Tested at TA=25°C, f=1MHz

2. These parameters are sampled and are not 100% tested

Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply Voltage for -10/12/15 VDD 3.0 3.3 3.6 V

Supply Voltage for -8 VDD 3.135 3.3 3.6 V

Input High Voltage VIH 2.0 - VDD+0.3 V

Input Low Voltage VIL -0.3 - 0.8 V

Ambient Temperature,

Commercial Range

TAc 0 - 70

o

C

Ambient Temperature,

Industrial Range

TAI -40 - 85

o

C

Capacitance

Parameter Symbol Test Condition Max Unit

Input Capacitance CIN VIN=0V 5 pF

Output Capacitance COUT VOUT=0V 7 pF

DC I/O Pin Characteristics

Parameter Symbol Test Conditions Min Max

Input Leakage

Current

IIL VIN = 0 to VDD -1uA 1uA

Output Leakage

Current

ILO

Output High Z

VOUT = 0 to VDD

-1uA 1uA

Output High Voltage VOH IOH = - 4mA 2.4

Output Low Voltage VOL ILO = + 4mA 0.4V

Rev: 2.02 3/2000 5/14 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. N

GS74116TP/J/U

AC Test Conditions

Power Supply Currents

Parameter Symbol Test Conditions

0 to 70°C -40 to 85°C

8ns 10ns 12ns 15ns 10ns 12ns 15ns

Operating

Supply

Current

IDD

CE ≤ VIL

All other inputs

≥ VIH or ≤ VIL

Min. cycle time

IOUT = 0 mA

170mA 145mA 130mA 110mA 155mA 140mA 120mA

Standby

Current

ISB1

CE ≥ VIH

All other inputs

≥ VIH or ≤VIL

Min. cycle time

70mA 65mA 60mA 55mA 75mA 70mA 65mA

Standby

Current

ISB2

CE ≥ VDD - 0.2V

All other inputs

≥ VDD - 0.2V or ≤ 0.2V

30mA 40mA

DQ

VT=1.4V

50Ω

30pF

1

DQ

3.3V

Output Load 1

Output Load 2

589Ω

434Ω

5pF

1

Note:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted

3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.

Parameter Conditions

Input high level VIH=2.4V

Input low level VIL=0.4V
Input rise time tr=1V/ns

Input fall time tf=1V/ns

Input reference level 1.4V

Output reference level 1.4V

Output load Fig. 1& 2