GS74116ATP/J/X
SOJ, TSOP, FP-BGA
256K x 16
Commercial Temp
Industrial Temp
4Mb Asynchronous SRAM
Features
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 150/130/105/95 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J: 400 mil, 44-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
Description
The GS74116A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS74116A is available in a 6 x 10 mm Fine
Pitch BGA package, 400 mil SOJ and 400 mil TSOP Type-II
packages.
7, 8, 10, 12 ns
3.3 V V
Center VDD and V
SOJ 256K x 16-Pin Configuration (Package J)
A
A
A
A
A
CE
DQ
DQ
DQ
DQ
V
DD
V
SS
DQ
DQ6
DQ7
DQ
WE
A
A
A
A
12
A
4
3
2
1
0
1
2
3
4
5
8
15
14
13
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Top view
44-pin
SOJ
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
A
A
OE
UB
LB
DQ
DQ
DQ
DQ
V
V
DQ
DQ
DQ
DQ
NC
A
A
A
A
A
DD
SS
5
6
7
16
15
14
13
SS
DD
12
11
10
9
8
9
10
11
17
Pin Descriptions
Symbol Description
FP-BGA 256K x 16 Bump Configuration (Package X)
123456
A0–A17 Address input
–DQ
CE
LB
UB
WE
OE
V
V
DD
SS
16
Data input/output
ALBOE A
0
1
A
A2NC
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
16
BDQ
UB A
CDQ14DQ15A
DVSSDQ13A
EVDDDQ12NC A16DQ5V
FDQ11DQ10A
GDQ9NC A
HNCA12A
3
A4CE DQ
5
A6DQ2DQ
17
A7DQ4V
8
A9DQ7DQ
10A11
13A14A15
WE DQ
1
3
DD
SS
6
8
NC
DQ1
NC No connect
6 x 10 mm Bump Pitch
Rev: 1.03 10/2002 1/14 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
TSOP-II 256K x 16 Pin Configuration (Package TP)
GS74116ATP/J/X
Top View
DQ
DQ
DQ
DQ
V
V
DQ
DQ
DQ
DQ
WE
A
A14
A
A
A
CE
A
4
A
3
A
2
A
1
A
0
1
2
3
4
DD
SS
5
6
7
8
15
13
12
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Top view
44 pin
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
A
5
A
6
A
7
OE
UB
LB
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
V
DD
DQ
12
DQ
11
DQ
10
DQ
9
NC
27
A
26
25
24
23
8
A
9
A
10
A
11
A
17
Block Diagram
A
A
CE
WE
OE
UB
LB
0
17
_____
_____
Address
Input
Buffer
Control
Row
Decoder
Memory Array
Column
Decoder
I/O Buffer
DQ
1
DQ
16
Rev: 1.03 10/2002 2/14 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Truth Table
GS74116ATP/J/X
CE OE WE LB UB DQ1 to DQ
8
DQ9 to DQ
16
H X X X X Not Selected Not Selected ISB1, ISB
L L Read Read
LLH
L H Read High Z
H L High Z Read
LL Write Write
LXL
L H Write Not Write, High Z
H L Not Write, High Z Write
L H H X X High Z High Z
L X X H H High Z High Z
Note: X: “H” or “L”
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply Voltage V
DD
–0.5 to +4.6 V
VDD Current
2
DD
I
Input Voltage V
Output Voltage V
IN
OUT
–0.5 to V
(≤ 4.6 V max.)
–0.5 to V
(≤ 4.6 V max.)
DD
DD
+0.5
+0.5
V
V
Allowable power dissipation PD 0.7 W
Storage temperature T
STG –55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.03 10/2002 3/14 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
GS74116ATP/J/X
Supply Voltage for -7/-8/-10/-12
Input High Voltage V
Input Low Voltage V
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
V
DD
IH
IL
T
Ac
I
T
A
3.0 3.3 3.6 V
2.0 —
–0.3 — 0.8 V
0—70
–40 — 85
Note:
1. Input overshoot voltage should be less than V
+2 V and not exceed 20 ns.
DD
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter Symbol Test Condition Max Unit
Input Capacitance CIN VIN = 0 V 5 pF
Output Capacitance C
Notes:
1. Tested at T
A = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
OUT
OUT
V
= 0 V 7 pF
V
DD
+0.3
V
o
C
o
C
DC I/O Pin Characteristics
Parameter Symbol Test Conditions Min Max
Input Leakage
Current
Output Leakage
Current
Output High Voltage V
Output Low Voltage V
IIL
I
LO
OH IOH = –4 mA 2.4 —
OL ILO = +4 mA — 0.4 V
Rev: 1.03 10/2002 4/14 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
VIN = 0 to V
Output High Z
V
OUT = 0 to V
DD
DD
– 1 uA 1 uA
–1 uA 1 uA
Power Supply Currents
Parameter Symbol Test Conditions
CE ≤ VIL
Operating
Supply
Current
Standby
Current
Standby
Current
I
I
I
SB1
SB2
DD
All other inputs
≥ V
IH or ≤ VIL
Min. cycle time
I
OUT = 0 mA
CE ≥ V
All other inputs
≥ V
IH
Min. cycle time
CE ≥ V
All other inputs
≥ V
DD
– 0.2 V or ≤ 0.2 V
or ≤ V
DD
– 0.2V
GS74116ATP/J/X
0 to 70°C –40 to 85°C
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
150 130 105 90 160 140 115 100 mA
IH
IL
40 30 25 25 50 40 35 35 mA
10 20 mA
Unit
AC Test Conditions
Parameter Conditions
Input high level VIH = 2.4 V
Input low level V
Input rise time tr = 1 V/ns
Input fall time tf = 1 V/ns
Input reference level 1.4 V
Output reference level 1.4 V
Output load Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, tHZ, t
OLZ
and t
OHZ
IL = 0.4 V
DQ
Output Load 1
VT = 1.4 V
Output Load 2
DQ
5pF
1
50Ω
3.3 V
589Ω
434Ω
30pF
1
Rev: 1.03 10/2002 5/14 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.