GS74104TP/J
SOJ, TSOP
1M x 4
Commercial Temp
Industrial Temp
4Mb Asynchronous SRAM
Features
• Fast access time: 8, 10, 12, 15 ns
• CMOS low power operation: 150/125/110/90 mA at
minimum cycle time.
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
Description
The GS74104 is a high speed CMOS Static RAM organized as
1,048,576 words by 4 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
3.3 V power supply and all inputs and outputs are TTL-com-
patible. The GS74104 is available in 400 mil SOJ and 400 mil
TSOP Type-II packages.
Center VDD and V
SOJ 1M x 4-Pin Configuraton
A4
A3
A2
A1
A0
CE
DQ1
V
DD
V
SS
DQ2
WE
A19
A18
A17
A16
A15
TSOP-II 1M x 4-Pin Configuration
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-pin
400 mil SOJ
8, 10, 12, 15 ns
3.3 V V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A5
A6
A7
A8
A9
OE
DQ4
V
V
DQ3
A10
A11
A12
A13
A14
NC
DD
SS
SS
DD
Pin Descriptions
Symbol Description
A0–A19 Address input
DQ1–DQ4 Data input/output
CE Chip enable input
WE Write enable input
OE Output enable input
V
DD
V
SS
NC No connect
+3.3 V power supply
Ground
NC
NC
NC
A4
A3
A2
A1
A0
CE
DQ1
V
DD
V
SS
DQ2
WE
A19
A18
A17
A16
A15
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-pin
400 mil TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A5
A6
A7
A8
A9
OE
DQ4
V
SS
V
DD
DQ3
A10
A11
A12
A13
A14
NC
NC
NC
NC
Rev: 1.07 1/2001 1/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Block Diagram
GS74104TP/J
A0
A19
CE
WE
OE
Address
Input
Buffer
Control
Row
Decoder
Memory Array
Column
Decoder
I/O Buffer
DQ1
DQ4
Truth Table
CE OE WE DQ1 to DQ8
H X X Not Selected ISB1, ISB2
L L H Read
VDD Current
IDDL X L Write
L H H High Z
Note: X: “H” or “L”
Rev: 1.07 1/2001 2/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply Voltage VDD –0.5 to +4.6 V
GS74104TP/J
Input Voltage VIN
Output Voltage VOUT
–0.5 to V
(≤ 4.6 V max.)
–0.5 to V
(≤ 4.6 V max.)
DD
DD
+0.5
+0.5
V
V
Allowable power dissipation PD 0.7 W
Storage temperature TSTG –55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage VIH 2.0 —
Input Low Voltage VIL –0.3 — 0.8 V
V
DD
V
DD
3.0 3.3 3.6 V
3.135 3.3 3.6 V
VDD +0.3
V
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
TAc 0 — 70
TAI –40 — 85
o
C
o
C
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2001 3/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Capacitance
Parameter Symbol Test Condition Max Unit
Input Capacitance CIN VIN = 0 V 5 pF
Output Capacitance COUT VOUT = 0 V 7 pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter Symbol Test Conditions Min Max
GS74104TP/J
Input Leakage
Current
Output Leakage
Current
Output High Voltage VOH IOH = –4mA 2.4 —
Output Low Voltage VOL ILO = +4mA — 0.4 V
IIL
ILO
VIN = 0 to V
Output High Z
VOUT = 0 to V
DD
DD
– 1 uA 1 uA
–1 uA 1 uA
Rev: 1.07 1/2001 4/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.