GSI GS71208TP-8 Datasheet
GS71208TP
TSOP
128K x 8
Commercial Temp
Industrial Temp
1Mb Asynchronous SRAM
Features
• Fast access time: 8 ns
• CMOS low power operation: 150 mA at minimum cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
TP: 400 mil, 32-pin TSOP Type II package
Description
The GS71208 is a high speed CMOS Static RAM organized as
131,072 words by 8 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
3.3 V power supply and all inputs and outputs are TTL-com-
patible. The GS71208 is available in a 400 mil TSOP Type-II
package.
Center VDD and V
TSOP-II 128K x 8-Pin Configuration
A3
A2
A1
A0
CE
DQ1
DQ2
V
DD
V
SS
DQ3
DQ4
WE
A16
A15
A14
A13
1
2
3
4
5
6
7
400 mil TSOP II
8
9
10
11
12
13
14
15
16
32-pin
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
8 ns
3.3 V V
A4
A5
A6
A7
OE
DQ8
DQ7
V
SS
V
DD
DQ6
DQ5
A8
A9
A10
A11
A12
DD
SS
Pin Descriptions
Symbol Description
A0–A16 Address input
DQ1–DQ8 Data input/output
CE Chip enable input
WE Write enable input
OE Output enable input
V
DD
V
SS
NC No connect
+3.3 V power supply
Ground
Rev: 1.03 10/2001 1/11 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Block Diagram
GS71208TP
A0
A16
CE
WE
OE
Address
Input
Buffer
Control
Row
Decoder
Memory Array
Column
Decoder
I/O Buffer
DQ1
DQ8
Truth Table
CE OE WE DQ1 to DQ8
H X X Not Selected ISB1, ISB2
L L H Read
VDD Current
IDDL X L Write
L H H High Z
Note: X: “H” or “L”
Rev: 1.03 10/2001 2/11 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply Voltage VDD –0.5 to +4.6 V
GS71208TP
Input Voltage VIN
Output Voltage VOUT
Allowable power dissipation PD 0.7 W
Storage temperature TSTG –55 to 150
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
–0.5 to V
(≤ 4.6 V max.)
–0.5 to V
(≤ 4.6 V max.)
DD
DD
+0.5
+0.5
V
V
o
C
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply Voltage for -8
Input High Voltage VIH 2.0 —
Input Low Voltage VIL –0.3 — 0.8 V
Ambient Temperature,
Commercial Range
V
DD
TAc 0 — 70
3.135 3.3 3.6 V
VDD +0.3
V
o
C
Ambient Temperature,
Industrial Range
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
TAI –40 — 85
o
C
Capacitance
Parameter Symbol Test Condition Max Unit
Input Capacitance CIN VIN = 0 V 5 pF
Output Capacitance COUT VOUT = 0 V 7 pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2001 3/11 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
DC I/O Pin Characteristics
Parameter Symbol Test Conditions Min Max
GS71208TP
Input Leakage
Current
Output Leakage
Current
Output High Voltage VOH IOH = –4mA 2.4 —
Output Low Voltage VOL ILO = +4mA — 0.4 V
IIL
ILO
VIN = 0 to V
Output High Z
VOUT = 0 to V
DD
DD
–1 uA 1 uA
–1 uA 1 uA
Power Supply Currents
Parameter Symbol Test Conditions
CE ≤ VIL
Operating
Supply
Current
IDD (max)
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
0 to 70°C –40 to 85°C
8 ns 8 ns
150 mA 160 mA
CE ≥ VIH
Standby
Current
Standby
Current
Rev: 1.03 10/2001 4/11 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ISB1 (max)
ISB2 (max)
All other inputs
≥ VIH or ≤VIL
Min. cycle time
CE ≥ VDD – 0.2 V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
55 mA 65 mA
15 mA 25 mA
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