GSI GS70328SJ-15I, GS70328SJ-15, GS70328SJ-12I, GS70328SJ-12, GS70328SJ-10 Datasheet

GS70328SJ/TS

SOJ, TSOP

32K x 8

Commercial Temp
Industrial Temp

256Kb Asynchronous SRAM

Features

• Fast access time: 7, 8, 10, 12, 15 ns

• 75/65/50/50/50 mA at max cycle rate

• Single 3.3 V ± 0.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• Package line up
SJ: 300 mil, 28-pin SOJ package
TS: 8 mm x 13.4 mm, 28-pin TSOP Type I package

Description

The GS70328 is a high speed CMOS static RAM organized as
32,763 words by 8 bits. Static design eliminates the need for
external clocks or timing strobes. The GS70328 operates on a
single 3.3 V power supply, and all inputs and outputs are TTL­compatible. The GS70328 is available in 300 mil, 28-pin SOJ
and 8 x 13.4 mm

2

, 28-pin TSOP Type-I packages.

1

2

3

4

5

6

28-pin

7

300 mil

8

9

10

11

12

13

14

SOJ

DQ

DQ

DQ

V

14

A

A

12

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

1

2

3

SS

Pin Configuration

28

27

26

25

24

23

22

21

20

19

18

17

16

15

V

WE

A

A

A

A

OE

A

CE

DQ

DQ

DQ

DQ

DQ

DD

13

8

9

11

10

8

7

6

5

4

Pin Descriptions

Symbol Description

A0–A

DQ

Top view

OE
A

11

9

A
A

8

A

13

WE
V

DD

A

14

A

12

A

7

A

6

A

5

A

4

A

3

7, 8, 10, 12, 15 ns

Corner VDD and V

14

1–DQ8 Data input/output

CE

WE

OE

V

DD

V

SS

NC No connect

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28- pin

8 x 13.4 TSOP I

Address input

Chip enable input

Write enable input

Output enable input

+3.3 V power supply

Ground

28
27
26
25
24
23
22
21
20
19
18
17
16
15

3.3 V V

10

A
CE

8

DQ
DQ

7

DQ

6

DQ

5

DQ

4

V

SS

DQ

3

DQ

2

DQ

1

A

0

A

1

A

2

DD

SS

Rev: 1.10 10/2002 1/12 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Block Diagram

Truth Table

A

A

CE

WE

OE

GS70328SJ/TS

0

Address

Input

Buffer

14

Control

Row

Decoder

Memory Array

Column
Decoder

I/O Buffer

DQ

1

DQ

8

CE OE WE DQ1 to DQ

8

H X X Not Selected ISB1, ISB

L L H Read

LX L Write

LH H High Z

Note: X: “H” or “L”

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Supply Voltage V

Input Voltage V

Output Voltage V

Allowable power dissipation PD 0.7 W

Storage temperature T

DD

IN

OUT

STG –55 to 150

–0.5 to +4.6 V

–0.5 to V

DD

(≤ 4.6 V max.)

–0.5 to VDD + 0.5

(≤ 4.6 V max.)

+ 0.5

V

V

o

C

VDD Current

2

DD

I

Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Rev: 1.10 10/2002 2/12 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Recommended Operating Conditions

Parameter Symbol Minimum Typical Maximum Unit

GS70328SJ/TS

Supply Voltage for -7/8/10/12

Input High Voltage V

Input Low Voltage V

Ambient Temperature,

Commercial Range

Ambient Temperature,

Industrial Range

V

DD

IH

IL

T

Ac

I

T

A

3.0 3.3 3.6 V

2.0 —

–0.3 — 0.8 V

0—70

–40 — 85

Notes:

1. Input overshoot voltage should be less than V

+2 V and not exceed 20 ns.

DD

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Capacitance

Parameter Symbol Test Condition Maximum Unit

C

C

OUT

IN

Input Capacitance

Output Capacitance

Notes:

1. Tested at T

A = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

V

V

IN

OUT

= 0 V

= 0 V

V

DD

+ 0.3

V

o

C

o

C

5pF

7pF

DC I/O Pin Characteristics

Parameter Symbol Test Conditions Min Max

V

Input Leakage Current I

Output Leakage Current I

Output High Voltage V

Output Low Voltage V

IL

LO

OH

OL ILO = +4 mA — 0.4 V

Rev: 1.10 10/2002 3/12 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

= 0 to V

IN

DD

Output High Z

V

= 0 to V

OUT

OH

I

DD

= –4 mA 2.4 V —

–1uA 1uA

–1uA 1uA

Power Supply Currents

Parameter Symbol Test Conditions

≤ VIL

CE

Operating

Supply

Current

Standby

Current

Standby

Current

IDD

ISB1

ISB2

All other inputs

≥ VIH or ≤ VIL

Min. cycle time

IOUT = 0 mA

≥ VIH

CE

All other inputs

≥ VIH or ≤VIL

Min. cycle time

CE

≥ V

– 0.2 V

DD

All other inputs

– 0.2 V or

≥ V

DD

≤ 0.2 V

GS70328SJ/TS

0 to 70°C -40 to 85°C

7 ns 8 ns 10 ns 12 ns 15 ns 7 ns 8 ns 10 ns 12 ns 15 ns

75 mA 65 mA 50 mA 50 mA 50 mA 80 mA 70 mA 55 mA 55 mA 55 mA

35 mA 30 mA 25 mA 25 mA 25 mA 40 mA 35 mA 30 mA 30 mA 30 mA

1 mA 2 mA

AC Test Conditions

Parameter Conditions

Input high level VIH = 2.4 V

Input low level V

Input rise time tr = 1 V/ns

Input fall time tf = 1 V/ns

Input reference level 1.4 V

Output reference level 1.4 V

Output load Fig. 1& 2

Notes:

1. Include scope and jig capacitance

2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted

3. Output load 2 for t

LZ, tHZ, tOLZ and tOHZ

IL

= 0.4 V

DQ

Output Load 1

VT = 1.4 V

Output Load 2

DQ

5pF

1

50Ω

3.3 V

589Ω

434Ω

30pF

1

Rev: 1.10 10/2002 4/12 © 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.