GS GSM9107ZF Schematic [ru]

30V P-Channel Enhancement Mode MOSFET

Product Description Features

GSM9107, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent R
These devices are particularly suited for low
voltage power management, and low in-line power
loss are needed in commercial industrial surface
mount applications.

, low gate charge.

DS(ON)

Packages & Pin Assignments

GSM9107ZF (SOT-23-3L)

 -30V/-4.0A,R
 -30V/-3.2A,R
 -30V/-1.0A,R
 Super high density cell design for extremely

low R

DS (ON)

 SOT-23-3L package design

=65m@VGS=-10.0V

DS(ON)

=80m@VGS=-4.5V

DS(ON)

=105m@VGS=-2.5V

DS(ON)

Applications

 Power Management in Note book
 LED Display
 DC-DC System
 LCD Panel

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2
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Ordering Information

Gate

Source

Drain

GSM9107

Package Code

Pb Free

GS P/N

Z F

GSM9107

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Marking Information

Part Number Package Part Marking

GSM9107ZF SOT-23-3L 3SYW

Absolute Maximum Ratings

TA=25ºC unless otherwise noted

Symbol Parameter Typical Unit

V

Drain-Source Voltage -30 V

DSS

V

Gate –Source Voltage ±12 V

GSS

I

Continuous Drain Current(T

D

=150ºC)

J

TA=25ºC

TA=70ºC

-4.0

-3.2

IDM Pulsed Drain Current -15 A

IS Continuous Source Current(Diode Conduction) -1.5 A

PD Power Dissipation

TA=25ºC

TA=70ºC

1.25

0.8

TJ Operating Junction Temperature 150 ºC

T

Storage Temperature Range -55/150 ºC

STG

R

Thermal Resistance-Junction to Ambient 120 ºC/W

JA

A

W

GSM9107

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Electrical Characteristics

TA=25ºC unless otherwise noted

Symbol Parameter Conditions Min Typ Max Unit

Static

V

(BR)DSS

V

GS(th)

I

Gate Leakage Current VDS=0V,VGS=±12V ±100 nA

GSS

I

DSS

I

On-State Drain Current

D(on)

Drain-Source
Breakdown Voltage

=0V,ID=-250uA -30

V

GS

Gate Threshold Voltage VDS=VGS,ID=-250uA -0.6 -1.1

Zero Gate Voltage
Drain Current

VDS=-24V,VGS=0V -1

VDS=-24V,VGS=0V

T

=85ºC

A

-30

VDS≦-5V,VGS=-4.5V -6 A

≦-5V,VGS=-2.5V -3

V

DS

V

uA

VGS=- 10V,ID=-4.0A 55 65

Drain-Source
On-Resistance

VGS=-4.5V,ID=-3.2A 65 80

R

DS(on)

VGS=-2.5V,ID=-1.0A 82 105

gfs

Forward
Transconductance

VDS=-5.0V,ID=-2.8A 6.5 S

VSD Diode Forward Voltage IS=-1.0A,VGS=0V -0.7 -1.3 V

Dynamic

Qg Total Gate Charge 10 18

=-15V,

V

Qgs Gate-Source Charge 1.6

Qgd Gate-Drain Charge

C

Input Capacitance 450

iss

C

Output Capacitance 95

oss

C

rss

t

8 18

d(on)

Reverse Transfer
Capacitance

Turn-On Time

tr

t

25 50

d(off)

Turn-Off Time

tf

DS

V

=-10V,ID-4.0A

GS

=-15V,

V

DS

V

=0V,f=1MHz

GS

V

=-15V,

DD

=15 ,ID-1.0A,

R

L

V

=-10V,RG=6

GEN

3.0

55

8 18

25 35

m

nC

pF

ns

GSM9107

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