GREENWICH INSTRUMENTS GR881-H User Manual
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GR881-H (8K x 8)
M
A
A
A
A
A
A
A
A
A
A
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A
A
M
NON-VOLATILE RA
GR881-H (8K x 8)
NON-VOLATILE RA
ddress
D
OUT
ddress
D
D
ddress
D
D
CE
OE
CE
WE
OUT
IN
CE
WE
OUT
IN
READ CYCLE
t
<
<
WRITE CYCLE 1
<
t
<
<
t
<
RC
t
ACC
>
t
ACS
<
>
t
OE
<
>
t
OLZ
>
<
t
CLZ
<
>
t
WC
S
>
S
>
t
WP
<
t
WHZ
>
<<
WRITE CYCLE 2
t
WC
t
WP
<
t
WHZ
<>
TIMING (nS-nano seconds)
>
t
OH
<
>
t
CHZ
<
>
t
OHZ
<
>
<
t
DS
<>
<
>
<
>
t
DS
<
<>>
>
>
t
WR
>
t
OW
>
t
DH
>
t
WR
>
t
DH
Read Cycle 70nS
Symbol Parameter Min Max
t
RC Read cycle time 70
t
CC Access time 70
t
CS CE to output valid 70
t
OE OE to output valid 35
t
CLZ CE to output active 10
t
OLZ OE to output active 10
t
OH Output hold time 10
t
CHZ CE to output disable 25
t
OHZ OE to output disable 25
Write Cycle 70nS
Symbol Parameter Min Max
t
WC Write cycle time 70
t
WP Write pulse width 50
t
S Address setup time 0
t
WR Write recovery time 0
t
WHZ WR to output disable 20
t
OW Output active from WR 5
t
DS Data setup time 30
t
DH Data HOLD TIME 0
Notes
1. WE must be high during address transitions.
2. A Write occurs during the overlap of active CE
and a low WE.
3. CE = CE1 and CE2
4. WE is high for a read cycle.
REPLACES .......... 6264., 5565., etc.
ddress
D
OUT
ddress
D
D
ddress
D
D
CE
OE
CE
WE
OUT
IN
CE
WE
OUT
IN
READ CYCLE
t
<
<
WRITE CYCLE 1
<
t
<
<
t
<
RC
t
ACC
>
t
ACS
<
>
t
OE
<
>
t
OLZ
>
<
t
CLZ
<
>
t
WC
S
>
S
>
t
WP
<
t
WHZ OW
<
>
WRITE CYCLE 2
t
WC
t
WP
t
WHZ
<
>
t
DS
<
t
DS
<<>>
TIMING (nS-nano seconds)
>
t
OH
<
>
t
CHZ
<
>
t
OHZ
<
>
>
Read Cycle 70nS
Symbol Parameter Min Max
t
RC Read cycle time 70
t
CC Access time 70
t
CS CE to output valid 70
t
OE OE to output valid 35
t
CLZ CE to output active 10
t
OLZ OE to output active 10
t
OH Output hold time 10
t
CHZ CE to output disable 25
t
OHZ OE to output disable 25
Write Cycle 70nS
>
t
WR
>
<
t
>
<
t
DH
<
>>
>
Symbol Parameter Min Max
t
WC Write cycle time 70
t
WP Write pulse width 50
t
S Address setup time 0
t
WR Write recovery time 0
t
WHZ WR to output disable 20
t
OW Output active from WR 5
t
DS Data setup time 30
t
DH Data HOLD TIME 0
Notes
1. WE must be high during address transitions.
t
WR
>
<<
>
2. A Write occurs during the overlap of active CE
and a low WE.
3. CE = CE1 and CE2
4. WE is high for a read cycle.
t
DH
REPLACES .......... 6264., 5565., etc.
DIMENSIONS (mm)
<
37
<
>
>
>
7.3
>
>
4
>
2.50.5
<>
18
<
0.38
<>>
15.24
<
>
2000/95/EC
<
http://www.greenwichinst.co.uk
ISSUE 4 OCT 2005
DIMENSIONS (mm)
37
<
>
18
>
>
7.3
>
4
>>
2.50.5
<>
<
15.24
<
http://www.greenwichinst.co.uk
0.38
<>>
>
2000/95/EC
ISSUE 4 OCT 2005
r
A12A7A6A5A4A3A2A1A
A8A9A
A
A
r
GR881-H (8K x 8)
M
r
A12A7A6A5A4A3A2A1A
A8A9A
A
A
r
r
t
M
NON-VOLATILE RA
GR881-H (8K x 8)
NON-VOLATILE RA
DESCRIPTION
The GR881-H is an industrial temperature range,
8192 word by 8 bits (8K x 8) non-volatile CMOS Static
Ram, fabricated from advanced silicon gate CMOS
technology and a high reliability lithium power cell.
The pin-out of the GR881-H conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR881-H is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR881-H.
The GR881-H can, without external power, retain
data almost indefinitely. The limiting factor will be the
shelf life of the lithium cell, which is typically ten years.
It is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
APPLICATION
When powered down, the GR88-H1 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and use
definable lookup tables, etc.
DISPOSAL INSTRUCTIONS
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., fo
disposal.
UK
Greenwich Instruments Ltd.,
Meridian House, Park Road,
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
Fax: 08700 505 405
Greenwich Instruments Ltd., are continually developing their
products and reserve the right to alter specifications without
prior notice. Standard Terms and Conditions of Sale apply.
Symbol Min Max Units
ABSOLUTE MAXIMUM RATINGS
Vdd – 0.3 7.0 Volts
Vi/o – 0.3 Vdd +0.3 Volts
Temp – 40 +85 deg. C
OPERATING CONDITIONS
Symbol Min Typ Max Unit
Vdd 4.75 5.0 5.5 Volts
Vin (1) 2.2 Vdd+0.3 Volts
Vin (0) – 0.3 0.8 Volts
Iin (any other pin) – 1.0 +1.0 µA.
Vout (1)(Iout = –1mA) 2.4 Volts
Vout (0)(Iout = +2mA) 0.4 Volts
Idd (Active) 30 mA.
Idd (Deselected) 1.0 mA.
Tcycle 70 nS.
Cin (any pin) 10 pF
OPERATING MODE
CE OE WR MODE OUTPUT ldd
H X X Unsel. Hi-Z Standby
L H H Unsel. Hi-Z Active
L L H Read Dout Active
L X L Write Din Active
PIN CONNECTIONS
1
NC
2
3
4
5
6
7
8
9
10
0
11
D0
12
D1
13
D2
14
GND
DATA RETENTION OPERATING CONDITIONS
Vdd
VTH
3.2V
t
PD
0V
28
Vdd
27
WR
26
CE
25
24
23
11
22
OE
21
10
20
CE
19
D7
18
D6
17
D5
16
D4
15
D3
t
F
>
<
>
<
<
PIN DESIGNATIONS
Pin Function
2
0-A12 Address I/P`s
D0-D7 Data in/out
OE Output Enable
CE CE Chip Enable
1 2
WR Write Enable
Vdd +5Volt Power
1
GND Ground
<
t
DR
t
R
>
t
REC
>
<
>
Symbol Parameter Min Typ Max Units
Vdd Operating supply voltage 4.75 5.0 5.50 Volts
VTH Data retention voltage 4.5 Volts
t
F Vdd slew to 0V 15 µS
t
R Vdd slew 0V to 5.0V 15 µS
t
REC CE to O/P valid from power up 15 µS
t
DR Data retention time 10 Years
t
PD CE at Vin(1) before power down 0 µS
DESCRIPTION
The GR881-H is an industrial temperature range,
8192 word by 8 bits (8K x 8) non-volatile CMOS Static
Ram, fabricated from advanced silicon gate CMOS
technology and a high reliability lithium power cell.
The pin-out of the GR881-H conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR881-H is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by
the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR881-H.
The GR881-H can, without external power, retain
data almost indefinitely. The limiting factor will be the
shelf life of the lithium cell, which is typically ten years.
It is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.
APPLICATION
When powered down, the GR88-H1 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and use
definable lookup tables, etc.
DISPOSAL INSTRUCTIONS
Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., fo
disposal.
UK
Greenwich Instruments Ltd.,
Meridian House, Park Road,
Swanley, Kent. BR8 8AH
Tele: 08700 505 404
Fax: 08700 505 405
Greenwich Instruments Ltd., are continually developing thei
products and reserve the right to alter specifications withou
prior notice. Standard Terms and Conditions of Sale apply.
Symbol Min Max Units
ABSOLUTE MAXIMUM RATINGS
Vdd – 0.3 7.0 Volts
Vi/o – 0.3 Vdd +0.3 Volts
Temp – 40 +85 deg. C
OPERATING CONDITIONS
Symbol Min Typ Max Unit
Vdd 4.75 5.0 5.5 Volts
Vin (1) 2.2 Vdd+0.3 Volts
Vin (0) – 0.3 0.8 Volts
Iin (any other pin) – 1.0 +1.0 µA.
Vout (1)(Iout = –1mA) 2.4 Volts
Vout (0)(Iout = +2mA) 0.4 Volts
Idd (Active) 30 mA.
Idd (Deselected) 1.0 mA.
Tcycle 70 nS.
Cin (any pin) 10 pF
OPERATING MODE
CE OE WR MODE OUTPUT ldd
H X X Unsel. Hi-Z Standby
L H H Unsel. Hi-Z Active
L L H Read Dout Active
L X L Write Din Active
PIN CONNECTIONS
1
NC
2
3
4
5
6
7
8
9
10
0
11
D0
12
D1
13
D2
14
GND
DATA RETENTION OPERATING CONDITIONS
Vdd
VTH
3.2V
t
PD
0V
28
Vdd
27
WR
26
CE
25
24
23
11
22
OE
21
10
20
CE
19
D7
18
D6
17
D5
16
D4
15
D3
t
F
>
<
>
<
<
PIN DESIGNATIONS
Pin Function
2
0-A12 Address I/P`s
D0-D7 Data in/out
OE Output Enable
CE CE Chip Enable
1 2
WR Write Enable
Vdd +5Volt Power
1
GND Ground
<
t
DR
t
R
>
t
REC
>
<
>
Symbol Parameter Min Typ Max Units
Vdd Operating supply voltage 4.75 5.0 5.50 Volts
VTH Data retention voltage 4.5 Volts
t
F Vdd slew to 0V 15 µS
t
R Vdd slew 0V to 5.0V 15 µS
t
REC CE to O/P valid from power up 15 µS
t
DR Data retention time 10 Years
t
PD CE at Vin(1) before power down 0 µS
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