GREENWICH INSTRUMENTS GR3281H User Manual

A

A

A

GR3281H (32K x 8)

M

A

A

A

A

A

A

A

A

M

A

A

A

A

A

NON-VOLATILE RA

GR3281H (32K x 8)

NON-VOLATILE RA

ddress

D

OUT

ddress

D

D

ddress

D

D

CE

OE

CE

WE

OUT

IN

CE

WE

OUT

IN

READ CYCLE

t

<

<

WRITE CYCLE 1

<

t
<

<

t
<

RC

t

ACC

>

t

ACS

<

>

t

OE

<

>

t

OLZ

>

<

t

CLZ

>

<

t

WC

S

>

S

>

t

WP

<

t

WHZ OW

>

<<

WRITE CYCLE 2

t

WC

t

WP

<

t

WHZ

<>

t

DS

<

t

DS

<<>>

t

OH

t

<

t

<

>

<

t

t

DH

<>

>

t

<

>

t

DH

>

>

CHZ

OHZ

t

WR

WR

TIMING (nS-nano seconds)

Read Cycle 70nS

<

>

>

>

Symbol Parameter Min Max

t

RC Read cycle time 70

t

CC Access time 70

t

CS CE to output valid 70

t

OE OE to output valid 35

t

CLZ CE to output active 10

t

OLZ OE to output active 10

t

OH Output hold time 10

t

CHZ CE to output disable 25

t

OHZ OE to output disable 25

Write Cycle 70nS

Symbol Parameter Min Max

t

WC Write cycle time 70

t

>

>

WP Write pulse width 50

t

S Address setup time 0

t

WR Write recovery time 0

t

WHZ WR to output disable 20

t

OW Output active from WR 5

t

DS Data setup time 30

t

DH Data HOLD TIME 0

ddress

D

OUT

ddress

D

D

CE

OE

CE

WE

OUT

IN

Notes

>

>

1. WE must be high during address transitions.

2. A Write occurs during the overlap of a low CE
and a low WE.

3. WE is high for a read cycle.

REPLACES

62256., 43256., 55257., etc.

ddress

CE

WE

D

OUT

D

IN

READ CYCLE

t

<

<

WRITE CYCLE 1

<

t
<

<

t
<

RC

t

ACC

>

t

ACS

<

>

t

OE

<

>

t

OLZ

>

<

t

CLZ

<

>

t

WC

S

>

S

>

t

WP

<

t

WHZ OW

>

<

WRITE CYCLE 2

t

WC

t

WP

t

WHZ

<

>

t

DS

<

t

DS

<<>>

TIMING (nS-nano seconds)

>

t

OH

<

>

t

CHZ

<

>

t

OHZ

<

>

>

Read Cycle 70nS

Symbol Parameter Min Max

t

RC Read cycle time 70

t

CC Access time 70

t

CS CE to output valid 70

t

OE OE to output valid 35

t

CLZ CE to output active 10

t

OLZ OE to output active 10

t

OH Output hold time 10

t

CHZ CE to output disable 25

t

OHZ OE to output disable 25

Write Cycle 70nS

>

t

WR

>

<

t

>

<

t

DH

<

>>

Symbol Parameter Min Max

t

WC Write cycle time 70

t

WP Write pulse width 50

t

S Address setup time 0

t

WR Write recovery time 0

t

WHZ WR to output disable 20

t

OW Output active from WR 5

t

DS Data setup time 30

t

DH Data HOLD TIME 0

Notes

>

t

WR

>

<<

>

t

DH

1. WE must be high during address transitions.

2. A Write occurs during the overlap of a low CE
and a low WE.

3. WE is high for a read cycle.

REPLACES

62256., 43256., 55257., etc.

DIMENSIONS (mm)

<

37

<

>

>

>

7.3

>

>

4

>

2.50.5

<>

18

<

0.38

<>>

15.24

<

>

2000/95/EC

<

http://www.greenwichinst.co.uk

ISSUE 4 OCT 2005

DIMENSIONS (mm)

37

<<>

>

18

>

>

7.3

>

>

4

>

2.50.5

<

15.24

<

http://www.greenwichinst.co.uk

0.38

<>>

>

2000/95/EC

ISSUE 4 OCT 2005

r

r

r

A14A12A7A6A5A4A3A2A1A

A13A8A9A

A

A

r

r

GR3281H (32K x 8)

M

r

r

r

A14A12A7A6A5A4A3A2A1A

NON-VOLATILE RA

DESCRIPTION

The GR3281-H is an industrial temperature range,
32768 word by 8 bits (32K x 8) non-volatile CMOS
Static Ram, fabricated from advanced silicon gate
CMOS technology and a high reliability lithium powe
cell.
The pin-out of the GR3281-H conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR3281-H
is write protected by an internal inhibit function fo
Data Protection and the memory contents are
retained by the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions
required when installing the GR3281-H.
The GR3281-H can, without external power, retain
data almost indefinitely. The limiting factor will be the
shelf life of the lithium cell, which is typically ten years.
It is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.

APPLICATION

When powered down, the GR3281H is transportable
and data can be moved from system to system, this
makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and use
definable lookup tables, etc.

DISPOSAL INSTRUCTIONS

Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., fo
disposal.

UK

Greenwich Instruments Ltd.,
Meridian House, Park Road,

Swanley, Kent. BR8 8AH

Tele: 08700 505 404

Fax: [phone]

Greenwich Instruments Ltd., are continually developing thei
products and reserve the right to alter specifications without
prior notice. Standard Terms and Conditions of Sale apply.

Symbol Min Max Units

ABSOLUTE MAXIMUM RATINGS

Vdd – 0.3 7.0 Volts
Vi/o – 0.3 Vdd +0.3 Volts
Temp – 40 +85

OPERATING CONDITIONS

Symbol Min Typ Max Unit

Vdd 4.75 5.0 5.5 Volts
Vin (1) 2.2 Volts
Vin (0) 0.8 Volts
Iin (any other pin) – 1.0 +1.0 µA.
Vout (1)(Iout = –1mA) 2.4 Volts
Vout (0)(Iout = +2mA) 0.4 Volts
Idd (Active) 30 mA.
Idd (Deselected) 1.0 mA.
Tcycle 70 nS.
Cin (any pin) 10 pF

OPERATING MODE

CE OE WR MODE OUTPUT ldd

H X X Unsel. Hi-Z Deselected
L H H Unsel. Hi-Z Active
L L H Read Dout Active
L X L Write Din Active

PIN CONNECTIONS

1
2
3
4
5
6
7
8
9
10

0

11

D0

12

D1

13

D2

14

GND

DATA RETENTION OPERATING CONDITIONS

Vdd

VTH

3.2V
t

PD

0V

28

Vdd

27

WR
26
25
24
23

11

22

OE
21

10

20

CE
19

D7
18

D6
17

D5
16

D4
15

D3

t

F

>

<

>

<

<

PIN DESIGNATIONS

Pin Function

0-A12 Address I/P`s
D0-D7 Data in/out
OE Output Enable
CE Chip Enable
WR Write Enable
Vdd +5Volt Power
GND Ground

t

R

<

>

t

DR

>

Symbol Min Max Units

Vdd – 0.3 7.0 Volts
Vi/o – 0.3 Vdd +0.3 Volts
Temp – 40 +85

DESCRIPTION

The GR3281-H is an industrial temperature range,
32768 word by 8 bits (32K x 8) non-volatile CMOS
Static Ram, fabricated from advanced silicon gate
CMOS technology and a high reliability lithium powe
cell.
The pin-out of the GR3281-H conforms to the JEDEC
standards and is fully compatible with normal static
RAM.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR3281-H
is write protected by an internal inhibit function fo

Symbol Min Typ Max Unit

Vdd 4.75 5.0 5.5 Volts
Vin (1) 2.2 Volts
Vin (0) 0.8 Volts
Iin (any other pin) – 1.0 +1.0 µA.
Vout (1)(Iout = –1mA) 2.4 Volts
Vout (0)(Iout = +2mA) 0.4 Volts
Idd (Active) 30 mA.
Idd (Deselected) 1.0 mA.
Tcycle 70 nS.
Cin (any pin) 10 pF

Data Protection and the memory contents are
retained by the lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15
microseconds) to power down from 5 volts to 0 volts.
This is much faster than system power failure
conditions. Therefore there are no special conditions

CE OE WR MODE OUTPUT ldd

H X X Unsel. Hi-Z Deselected
L H H Unsel. Hi-Z Active
L L H Read Dout Active
L X L Write Din Active

required when installing the GR3281-H.
The GR3281-H can, without external power, retain
data almost indefinitely. The limiting factor will be the
shelf life of the lithium cell, which is typically ten years.
It is possible that this figure may be extended in view
of the extremely light duty imposed upon the cell.

APPLICATION

When powered down, the GR3281H is transportable
and data can be moved from system to system, this

0

makes it ideal for program development, data
collection in data loggers, program changes in
process control, automation and robotics and use
definable lookup tables, etc.

>

t

REC

<

ABSOLUTE MAXIMUM RATINGS

OPERATING CONDITIONS

OPERATING MODE

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

Symbol Parameter Min Typ Max Units

Vdd Operating supply voltage 4.75 5.0 5.50 Volts
VTH Data retention voltage 4.5 Volts

t

F Vdd slew to 0V 15 µS

t

R Vdd slew 0V to 5.0V 15 µS

t

REC CE to O/P valid from power up 15 µS

t

DR Data retention time 10 Years

t

PD CE at Vin(1) before power down 0 µS