GREENWICH INSTRUMENTS GR12883 User Manual

DESCRIPTION

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The GR12883 is a 131072 word by 8 bits (128K x 8)
non-volatile CMOS Static Ram, fabricated from
advanced silicon gate CMOS technology and a high
reliability lithium power cell.
The power down circuit is fully automatic and is
referenced at 4.5 volts. At this point the GR12883 is
write protected by an internal inhibit function for Data
Protection and the memory contents are retained by the
lithium power source.
Power down is very fast, this being essential for data
integrity, taking a maximum of 15 µS (15 microseconds)
to power down from 5 volts to 0 volts. This is much faste
than system power failure conditions. Therefore there
are no special conditions required when installing the
GR12883.
The GR12883 can, without external power, retain data
almost indefinitely. The limiting factor will be the shel
life of the lithium cell, which is typically ten years. It is
possible that this figure may be extended in view of the
extremely light duty imposed upon the cell.

APPLICATION

When powered down, the GR12883 is transportable
and data can be moved from system to system, this
makes it ideal for program development, data collection
in data loggers, program changes in process control,
automation and robotics and user definable lookup
tables, etc.

DIMENSIONS (mm)

18

<

0.38

<>>

15.24

<

>

GR12883 (128K x 8)

NON-VOLATILE RAM

>

43.5

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13

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4

2.50.5

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UK

Greenwich Instruments Ltd.,
Meridian House, Park Road,

Swanley, Kent. BR8 8AH

Tele: 08700 505 404

Fax: [phone]

DISPOSAL INSTRUCTIONS

Do not dispose of non-volatile memory devices by
incineration or crushing. Devices may be returned
carriage paid to Greenwich Instruments Ltd., for disposal.

Greenwich Instruments Ltd., are continually developing their products and reserve the
right to alter specifications without prior notice. Standard Terms and Conditions of Sale

http://www.greenwichinst.co.uk

ISSUE 3 JAN 2006

GR12883 NON-V OLATILE RAM

A

A

A

A

A

A

A

A

A16A14A12A7A6A5A4A3A2A1A

A

A13A8A9A

A

A

ABSOLUTE MAXIMUM RATINGS

Symbol Min Max Units

Vdd – 0.3 7.0 Volts
Vi/o – 0.3 Vdd + 0.3 Volts
Temp – 20 + 70 deg. C

OPERATING CONDITIONS

Symbol Min Typ Max Unit

Vdd 4.75 5.0 5.5 Volts
VTH 4.5 Volts
Vin (1) 2.2 Volts
Vin (0) 0.8 Volts
lin (CE) 1.0 LSTTL Load
Iin (any other pin) – 1.0 + 1.0 µA.
Vout (1)(Iout = –1mA) 2.4 Volts
Vout (0)(Iout = +2mA) 0.4 Volts
Idd (Active) 30 mA.
Idd (Deselected) 1.0 mA.
Tcycle 100 nS.
Cin (any pin) 10 pF

OPERATING MODE

CE OE WR MODE D0 - D7 ldd

H X X Unsel. Hi-Z Deselected
L H H Unsel. Hi-Z Active
L L H Read Dout Active
L X L Write Din Active

PIN CONNECTIONS

1

NC

2
3
4
5
6
7
8
9
10
11
12

0

13

D0

14

D1

15

D2

16

GND

HM628128., M5M51008.

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

Vdd

15

CE

2

WR

11

OE

10

CE

1
D7
D6
D5
D4
D3

REPLACES

PIN DESIGNATIONS

Pin Function

0-A16 Address I/P`s
D0-D7 Data in/out
OE Output Enable
CE CE Chip Enable

2

1

WR Write Enable
Vdd +5Volt Power
GND Ground
NC No Connect

ddress

CE

OE

D

OUT

ddress

CE

WE

D

OUT

D

IN

ddress

CE

WE

D

OUT

D

IN

READ CYCLE

t

RC

t

ACC

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t

<

WRITE CYCLE 1

<

t

S

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>

WRITE CYCLE 2

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t

S

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CLZ

t

t

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WHZ

t

WHZ

ACS

t

>

OE

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t

OLZ

<

t

WC

t

WP

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<

t

WC

t

WP

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t

OH

<

>

t

CHZ

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t

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>

t

<

t

OW

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t

DH

DS

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t

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t

t

DH

DS

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OHZ

WR

WR

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Read Cycle 100nS

TIMING (nS-nano seconds)

Symbol Parameter Min Max

t

RC Read cycle time 100

t

CC Access time 100

t

CS CE to output valid 100

t

OE OE to output valid 50

t

CLZ CE to output active 5

t

OLZ OE to output active 5

t

OH Output hold time 10

t

CHZ CE to output disable 35

t

OHZ OE to output disable 35

Write Cycle 100nS
Symbol Parameter Min Max

t

WC Write cycle time 100

t

WP Write pulse width 75

t

S Address setup time 0

t

WR Write recovery time 0

t

WHZ WR to output disable 35

t

OW Output active from WR 5

t

DS Da ta se tup tim e 40

t

DH Data HOLD TIME 0

Notes

1.WE must be high during address transitions.

2.A Write occurs during the overlap of a low CE , a high
CE and a low WE.

2

3.WE is high for a read cycle.

DATA RETENTION OPERATING CONDITIO NS

Vdd
VTH

3.2V

0V

t

F

>

<

t

PD

>

<

t

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DR

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1

t

R

>

t

REC

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Symbol Parameter Min Typ Max Units

Vdd Operating supply voltage 4.75 5.0 5.50 Volts
VTH Data retention voltage 4.5 Volts

t

F Vdd slew to 0V 15 µS

t

R Vdd slew 0V to 5.0V 15 µS

t

REC CE to O/P valid from power up 15 µS

t

DR Data retention time 10 Years

t

PD CE at Vin(1) before power down 0 µS