Green Power Semiconductors GST32005 Datasheet

GST32005

PHASE CONTROLLED SCR

DC power supply
AC drives

VOLTAGE UP TO 1600 V
AVERAGE CURRENT 50 A

SURGE CURRENT 1,49 kA

BLOCKING CHARACTERISTICS
Characteristic Conditions

VRRM

Repetitive peak reverse voltage 1600 V

VRSM

Non-repetitive peak reverse voltage 1700 V

VDRM

Repetitive peak off-state voltage 1600 V

IDRM

Repetitive peak off-state current, max.

VDRM, single phase, half wave, Tj = Tjmax

15 mA

I

RRM

Repetitive peak reverse current, max.

V

RRM

, single phase, half wave, Tj = Tjmax

15 mA

ON-STATE CHARACTERISTICS

IT(AV)

Average on-state current Sine wave,180° conduction, Tc = 85 °C 50 A

IT(RMS)

R.M.S. on-state current Sine wave,180° conduction, Tc = 85 °C 79 A

ITSM

Surge on-state current

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

1,49 kA

I²t I² t for fusing coordination 11 kA²s
VT(TO)

Threshold voltage

Tj = Tjmax

0,85 V

r

T

On-state slope resistance

Tj = Tjmax

4,6

m

Ω

VTM

Peak on-state voltage, max

On-state current IT =

160 A , Tj = 25 °C 1,68 V

IH

Holding current, max

Tj = 25 °C

200 mA

I

L

Latching current, typ

Tj = 25 °C

400 mA

TRIGGERING CHARACTERISTICS

VGT

Gate trigger voltage

Tj = 25 °C, VD = 5 V

2,5 V

IGT

Gate trigger current

Tj = 25 °C, VD = 5 V

150 mA

VGD

Non-trigger voltage

VD = 67% VRRM, Tj = Tjmax

0,20 V

PGM

Peak gate power dissipation Pulse width 0.5 ms 8 W

PG(AV)

Average gate power dissipation 2 W

IFGM

Peak gate current A

VFGM

Peak gate voltage (forward) V

V

RGM

Peak gate voltage (reverse) V

SWITCHING CHARACTERISTICS

di/dt Critical rate of rise of on-state current

Tj = Tjmax

150 A/µs

dV/dt Critical rate of rise of off-state voltage

Tj = Tjmax

500 V/µs

tq

Turn-off time, typ

Tj = Tjmax, IT = 320 A, di/dt = -12.5 A/µs

µs

VR = 100 V, VD = 67% VDRM,

dV/dt = 20 V/µs

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case) 0,350 °C/W

Rth(c-h)

Thermal resistance (case to heatsink) 0,250 °C/W

Tjmax

Max operating junction temperature 125 °C

Tstg

Storage temperature -30 / 125 °C

F Torque 2,8 N·m

Mass 30 g

Document GST32005T001

Value

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors

1/4" UNF 2A

dimensions in mm