Green Power Semiconductors GSF31012 Datasheet

GSF31012

FAST RECOVERY STUD DIODE

UL-certified insulating sleeve

VOLTAGE UP TO 1200 V
AVERAGE CURRENT 125 A

SURGE CURRENT 2,8 kA

BLOCKING CHARACTERISTICS
Characteristic Conditions

VRRM

Repetitive peak reverse voltage 1200 V

VRSM

Non-repetitive peak reverse voltage 1300 V

IRRM

Repetitive peak reverse current, max.

VRRM, single phase, half wave, Tj = Tjmax

35 mA

FORWARD CHARACTERISTICS

IF(AV)

Average forward current Sine wave,180° conduction, Th = 100 °C 125 A

IF(RMS)

R.M.S. forward current Sine wave,180° conduction, Th = 100 °C 196 A

IFSM

Surge forward current

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

2,8 kA

I²t I² t for fusing coordination 39 kA²s
VF(TO)

Threshold voltage

Tj = Tjmax

1,2 V

rF

Forward slope resistance

Tj = Tjmax

2,3

mΩ

VFM

Peak forward voltage, max

Forward current IF =

450 A, Tj = 25°C 2,5 V

SWITCHING CHARACTERISTICS

trr

Rverse recovery time, typ Tj = 125 °C , IF = 350 A, di/dt = -25 A/µs VR=30 V 1 µs

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case) Double side cooled 0,25 °C/W

Rth(c-h)

Thermal resistance (case to heatsink) Double side cooled 0,08 °C/W

Tjmax

Max operating junction temperature 150 °C

Tstg

Storage temperature -40 / 150 °C

M Mounting torque 10 N·m

Mass 100 g

Ordering information

cathode on stud anode on stud
GSF31012-vvtt GSFR31012-vvtt vv=V

RRM

/100 tt= trr {µs] * 10

example

GSF31012-1210

1200 V

1 µs @ 25°C

Document GSF31012T001

Value

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors

dimensions in inch

3/8 " - 24 UNF THD