Green Power Semiconductors GSD63034 Datasheet

GSD63034

FAST RECOVERY STUD DIODE

UL-certified insulating sleeve

VOLTAGE UP TO 3000 V

AVERAGE CURRENT 340 A

SURGE CURRENT 4.5 kA

BLOCKING CHARACTERISTICS

Characteristic Conditions

V

RRM

Repetitive peak reverse voltage 3000 V

V

RSM

Non-repetitive peak reverse voltage 3100 V

I

RRM

Repetitive peak reverse current, max.

V

RRM

, single phase, half wave, Tj = Tjmax

50 mA

FORWARD CHARACTERISTICS

I

F(AV)

Average forward current Sine wave,180° conduction, Tc = 85 °C 340 A

I

F(RMS)

R.M.S. forward current Sine wave,180° conduction, Tc = 85 °C 534 A

I

FSM

Surge forward current

Non rep. half sine wave, 50 Hz, V

R

= 0 V, Tj = T

jmax

4.5 kA

I²t I² t for fusing coordination 101 kA²s

V

F(TO)

Threshold voltage

T

j

= T

jmax

0.84 V

r

F

Forward slope resistance

T

j

= T

jmax

1.53 m

Ω

V

FM

Peak forward voltage, max

Forward current I

F

=

780 A, Tj = 25°C 1.8 V

SWITCHING CHARACTERISTICS

t

rr

Rverse recovery time, typ µs

THERMAL AND MECHANICAL CHARACTERISTICS

R

th(j-c)

Thermal resistance (junction to case) Double side cooled 0.12 °C/W

R

th(c-h)

Thermal resistance (case to heatsink) Double side cooled 0.05 °C/W

T

jmax

Max operating junction temperature 160 °C

T

stg

Storage temperature -40 / 160 °C

M Mounting torque 50 N·m

Mass 250 g

Ordering information

cathode on stud anode on stud

GSD63034-vv GSDR63034-vv vv=V

RRM

/100

example GSD63034-28 2800 V cathode on stud

Document GSD63034T001

Value

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]
Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors