Green Power Semiconductors GSD61015 Datasheet

GSD61015

RECTIFIER DIODE

Standard and reverse polarities
Compression bonded encapsulation

VOLTAGE UP TO 1200 V
AVERAGE CURRENT 150 A

SURGE CURRENT 3 kA

BLOCKING CHARACTERISTICS
Characteristic Conditions

VRRM

Repetitive peak reverse voltage 1200 V

VRSM

Non-repetitive peak reverse voltage 1300 V

IRRM

Repetitive peak reverse current, max.

VRRM, single phase, half wave, Tj = Tjmax

30 mA

FORWARD CHARACTERISTICS

IF(AV)

Average forward current Sine wave,180° conduction, Tc = 150°C 150 A

IF(RMS)

R.M.S. forward current Sine wave,180° conduction, Tc = 150°C 236 A

IFSM

Surge forward current

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

3 kA

I²t I² t for fusing coordination 37.5 kA²s
VF(TO)

Threshold voltage

Tj = Tjmax

0.8 V

rF

Forward slope resistance

Tj = Tjmax

1.17

mΩ

VFM

Peak forward voltage, max

Forward current IF =

500 A, Tj = 25°C 1.38 V

SWITCHING CHARACTERISTICS

Qrr

Rverse recovery charge

Tj = Tjmax, IF = A, tp = µs, di/dt = A/µs

µC

Irr

Reverse recovery current

VR = V, dV/dt = V/µs

A

trr

Reverse recovery time µs

VFP

Forward recovery voltage

Tj = Tjmax, di/dt = A/µs

V

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case) Double side cooled 0.28 °C/W

Rth(c-h)

Thermal resistance (case to heatsink) Double side cooled 0.15 °C/W

Tjmax

Max operating junction temperature 200 °C

Tstg

Storage temperature -65 / 200 °C

M Mounting torque 12.5 N·m

Mass 100 g

Document GSD61015T001

Value

Symbol A B C D E F G H
Inches 0.63 0.34 0.98 1.58 0.89 4.48 0.63 0.281
mm 16.0 8.6 24.9 40.1 22.6 113.8 16.0 7.14

Strike distance .64 inch / 16.2 mm (Min)

.375 - 24 UNF - 2A

THD.

1.055 inch / 26.8 mm

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors