, single phase, half wave, Tj = Tjmax
VR = 100 V, VD = 67% VDRM,
Green Power
Semiconductors
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
High reliability operation
DC power supply
AC drives
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
VOLTAGE UP TO 2400 V
AVERAGE CURRENT 900 A
SURGE CURRENT 15 kA
BLOCKING CHARACTERISTICS
Characteristic Conditions
VRRM
VRSM
VDRM
IDRM
RRM
Repetitive peak reverse voltage 2400 V
Non-repetitive peak reverse voltage 2500 V
Repetitive peak off-state voltage 2400 V
Repetitive peak off-state current, max.
Repetitive peak reverse current, max.
VDRM, single phase, half wave, Tj = Tjmax
RRM
Value
100 mA
100 mA
ON-STATE CHARACTERISTICS
IT(AV)
IT(RMS)
ITSM
I²t I² t for fusing coordination 1125 kA²s
VT(TO)
T
VTM
IH
L
Average on-state current Sine wave,180° conduction, Th = 55 °C 900 A
R.M.S. on-state current Sine wave,180° conduction, Th = 55 °C 1414 A
Surge on-state current
Threshold voltage
On-state slope resistance
Peak on-state voltage, max
Holding current, max
Latching current, typ
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
On-state current IT =
Tj = 25 °C
2000 A , Tj = 25 °C 2.3 V
15 kA
1.08 V
0.51
m
mA
mA
TRIGGERING CHARACTERISTICS
VGT
IGT
VGD
PGM
PG(AV)
IFGM
VFGM
RGM
Gate trigger voltage
Gate trigger current
Non-trigger voltage
Peak gate power dissipation Pulse width 0.5 ms 100 W
Average gate power dissipation W
Peak gate current A
Peak gate voltage (forward) V
Peak gate voltage (reverse) V
Tj = 25 °C, VD = 12 V
Tj = 25 °C, VD = 12 V
VD = 67% VRRM, Tj = Tjmax
2.5 V
250 mA
0.15 V
SWITCHING CHARACTERISTICS
di/dt Critical rate of rise of on-state current
dV/dt Critical rate of rise of off-state voltage
tq
Turn-off time, typ
Tj = Tjmax
Tj = Tjmax
Tj = Tjmax, IT = 800 A, di/dt = -12.5 A/µs
100 A/µs
1000 V/µs
400 µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Rth(c-h)
Tjmax
Tstg
F Clamping force ± 10% 15 kN
Document GPTK3090T001
Thermal resistance (junction to case) Double side cooled 0.033 °C/W
Thermal resistance (case to heatsink) Double side cooled 0.001 °C/W
Max operating junction temperature 125 °C
Storage temperature -40 / 125 °C
Mass 320 g