Green Power Semiconductors GPT200 Datasheet

GPT200

FAST RECOVERY DIODE BRIDGE

TARGET SPECIFICATION

Fast recovery time characteristics
Insulated base

VOLTAGE UP TO 600 V

DC OUTPUT CURRENT 60 A

BLOCKING CHARACTERISTICS

Characteristic Conditions

VR

Repetitive cathode to anode voltage 600 V

IRRM

Repetitive peak reverse current, max.

VR, single phase, half wave, Tj = Tjmax

5 mA

V

ISOL

RMS insulation voltage Any terminals to case, t= 1 min 2500 V

FORWARD CHARACTERISTICS

IF

Maximum DC output current Tc = 85°C 60 A

IFSM

Surge forward current

Single pulse, Tj = 25 °C

300 A

VF(TO)

Threshold voltage

Tj = Tjmax

0,914 V

rF

Forward slope resistance

Tj = Tjmax

10,5

mΩ

VFM

Peak forward voltage, max

Forward current IF =

30 A, Tj = Tjmax 1,23 V

SWITCHING CHARACTERISTICS

Qrr

Rverse recovery charge, typ

Tj = 25°C, IF = 20 A, di/dt = -100 A/µs

1,2 nC

Irr

Reverse recovery current

VR = 30 V

10 A

trr

Reverse recovery time, typ 160 ns

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case) Both leg conduction 0,4 °C/W

Tjmax

Max operating junction temperature 150 °C

F Mounting torque 1,3 N·m

Mass 30 g

Document GPT200T001

Value

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors