GPS - Green Power Semiconductors SPA
Green Power
Semiconductors
Factory: Via Ungaretti 10, 16157 Genova, Italy
BLOCKING CHARACTERISTICS
Characteristic Conditions
V
V
I
RRM
RRM
RSM
Repetitive peak reverse voltage 1600 V
Non-repetitive peak reverse voltage 1700 V
, single phase, half wave, Tj = Tjmax
RRM
Repetitive peak reverse current, max.
V
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Web: www.gpsemi.it
E-mail: info@gpsemi.it
GPDR2438
RECTIFIER DIODE
VOLTAGE UP TO 1600 V
AVERAGE CURRENT 4380 A
SURGE CURRENT 42 kA
Value
150 mA
FORWARD CHARACTERISTICS
I
F(AV)
I
F(RMS)
I
FSM
Average forward current Sine wave,180° conduction, Th = 55°C 4380 A
R.M.S. forward current Sine wave,180° conduction, Th = 55°C 6880 A
= 0 V, Tj = T
Surge forward current
Non rep. half sine wave, 50 Hz, V
R
jmax
42 kA
I²t I² t for fusing coordination 8820 kA²s
V
r
F
V
F(TO)
FM
Threshold voltage
Forward slope resistance
Peak forward voltage, max
= T
j
jmax
T
= T
j
jmax
T
Forward current I
F
7800 A, Tj = 25°C 1.5 V
0.76 V
0.095 m
Ω
SWITCHING CHARACTERISTICS
Q
rr
I
rr
t
rr
V
FP
Rverse recovery charge, typ
Reverse recovery current
Reverse recovery time µs
Forward recovery voltage
= T
j
T
R
V
= T
j
T
, IF = 2000 A, di/dt = -5 A/µs
jmax
= 100 V
, di/dt = A/µs
jmax
µC
A
V
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
R
th(c-h)
T
jmax
T
stg
F Clamping force ± 10% 30 kN
Thermal resistance (junction to case) Double side cooled 0.016 °C/W
Thermal resistance (case to heatsink) Double side cooled 0.001 °C/W
Max operating junction temperature 190 °C
Storage temperature -40 / 190 °C
Mass 1400 g
Document GPDR2438T001
Green Power
Semiconductors
RECTIFIER DIODE GPDR2438
Current rating - sine wave
200
150
100
Case temperature [°C]
50
60°30°
120°
90°
0 1000 2000 3000 4000 5000
IF [A]
d.s. cooled
45
40
35
30
25
[A]
20
FSM
I
15
10
5
0
1 10 100
Number of cycle current pulses [n]
180°
Power loss - sine wave
9000
8000
7000
6000
5000
[W]
F
4000
P
3000
2000
1000
0
0 1000 2000 3000 4000 5000
IF [A]
Forward voltage drop
10000
9000
8000
[A]
F
I
7000
6000
5000
4000
Tj=Tjmax
3000
2000
1000
0
0.5 0.7 0.9 1.1 1.3 1.5 1.7
VF [V]
180°
Thermal Impedance (j-c)
0.018
0.016
0.014
0.012
0.010
[°C / W]
0.008
0.006
TH(j-c)
Z
0.004
0.002
0.000
0.001 0.01 0.1 1 10 100
Time [s]
dimensions mm
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GPDR2438T001