GPS - Green Power Semiconductors SPA
Green Power
Semiconductors
Factory: Via Ungaretti 10, 16157 Genova, Italy
BLOCKING CHARACTERISTICS
Characteristic Conditions
VRRM
VRSM
IRRM
Repetitive peak reverse voltage 200 V
Non-repetitive peak reverse voltage 300 V
Repetitive peak reverse current, max.
VRRM, single phase, half wave, Tj = Tjmax
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Suitable for high forward current
High operational reliability
VOLTAGE UP TO 200 V
AVERAGE CURRENT 12100 A
SURGE CURRENT 100 kA
Value
50 mA
FORWARD CHARACTERISTICS
IF(AV)
IF(RMS)
IFSM
I²t I² t for fusing coordination 50000 kA²s
VF(TO)
rF
VFM
Average forward current Sine wave,180° conduction, Tc = 70°C 12100 A
R.M.S. forward current Sine wave,180° conduction, Tc = 70°C 19007 A
Surge forward current
Threshold voltage
Forward slope resistance
Peak forward voltage, max
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
Forward current IF =
8000 A, Tj = 25°C 1,01 V
100 kA
0,75 V
0,021
mΩ
SWITCHING CHARACTERISTICS
Qrr
Irr
trr
VFP
Rverse recovery charge, typ
Reverse recovery current
Reverse recovery time µs
Forward recovery voltage
Tj = Tjmax, IF = 1000 A, di/dt = -30 A/µs
VR = 50 V
Tj = Tjmax, di/dt = 100 A/µs
600 µC
A
V
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Rth(c-h)
Tjmax
Tstg
F Clamping force ± 10% 35 kN
Thermal resistance (junction to case) Double side cooled 0,006 °C/W
Thermal resistance (case to heatsink) Double side cooled 0,003 °C/W
Max operating junction temperature 170 °C
Storage temperature -40 / 170 °C
Mass 220 g
Document GPDD012KT001
Green Power
Semiconductors
RECTIFIER DIODE GPDD012K
Current rating - sine wave
185
165
145
125
105
85
Case temperature [°C]
65
30°
0 5000 10000
IF [A]
d.s. cooled
120
100
80
[A]
60
FSM
I
40
20
0
1 10 100
Number of cycle current pulses [n]
Power loss - sine wave
18000
16000
14000
12000
10000
[W]
F
P
90°
30°
8000
6000
180°
120°
4000
180°90° 120°60°
2000
0
0 5000 10000
IF [A]
Forward voltage drop
25000
20000
Tj=Tjmax
15000
[A]
F
I
10000
5000
0
0 0,5 1 1,5
VF [V]
Thermal Impedance (j-c)
0,007
0,006
0,005
0,004
[°C / W]
0,003
TH(j-c)
0,002
Z
0,001
0,000
0,001 0,01 0,1 1 10 100
Time [s]
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GPDD012KT001