Green Power Semiconductors GPDD012K Datasheet

GPDD012K
RECTIFIER DIODE
GPS - Green Power Semiconductors SPA
Green Power
Semiconductors
Factory: Via Ungaretti 10, 16157 Genova, Italy
BLOCKING CHARACTERISTICS Characteristic Conditions
VRRM VRSM IRRM
Repetitive peak reverse voltage 200 V Non-repetitive peak reverse voltage 300 V Repetitive peak reverse current, max.
VRRM, single phase, half wave, Tj = Tjmax
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Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Suitable for high forward current High operational reliability
VOLTAGE UP TO 200 V AVERAGE CURRENT 12100 A
Value
50 mA
FORWARD CHARACTERISTICS
IF(AV) IF(RMS) IFSM
I²t I² t for fusing coordination 50000 kA²s VF(TO)
rF
VFM
Average forward current Sine wave,180° conduction, Tc = 70°C 12100 A R.M.S. forward current Sine wave,180° conduction, Tc = 70°C 19007 A Surge forward current
Threshold voltage Forward slope resistance Peak forward voltage, max
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax Tj = Tjmax Forward current IF =
8000 A, Tj = 25°C 1,01 V
100 kA
0,75 V
0,021
m
SWITCHING CHARACTERISTICS
Qrr Irr trr VFP
Rverse recovery charge, typ Reverse recovery current Reverse recovery time µs Forward recovery voltage
Tj = Tjmax, IF = 1000 A, di/dt = -30 A/µs VR = 50 V
Tj = Tjmax, di/dt = 100 A/µs
600 µC
A
V
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c) Rth(c-h) Tjmax Tstg
F Clamping force ± 10% 35 kN
Thermal resistance (junction to case) Double side cooled 0,006 °C/W Thermal resistance (case to heatsink) Double side cooled 0,003 °C/W Max operating junction temperature 170 °C Storage temperature -40 / 170 °C
Mass 220 g
Document GPDD012KT001
Maximum surge current
Green Power
60°
Semiconductors
RECTIFIER DIODE GPDD012K
Current rating - sine wave
185 165 145 125 105
85
Case temperature [°C]
65
30°
0 5000 10000
IF [A]
d.s. cooled
120 100
80
[A]
60
FSM
I
40 20
0
1 10 100
Number of cycle current pulses [n]
Power loss - sine wave
18000 16000 14000 12000 10000
[W]
F
P
90°
30°
8000 6000
180°
120°
4000
180°90° 120°60°
2000
0
0 5000 10000
IF [A]
Forward voltage drop
25000
20000
Tj=Tjmax
15000
[A]
F
I
10000
5000
0
0 0,5 1 1,5
VF [V]
Thermal Impedance (j-c)
0,007 0,006 0,005 0,004
[°C / W]
0,003
TH(j-c)
0,002
Z
0,001 0,000
0,001 0,01 0,1 1 10 100
Time [s]
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GPDD012KT001
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