Green Power Semiconductors GOG94018, GOG95018 Datasheet

GOG9xx18
THREE PHASE AC-DC BRIDGE
Green Power
Semiconductors
Line to line voltage
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
GOG94018 GOG95018
400 V 500 V
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Fuse protection Temperature sensors
Snubber for SCR's protections Extractible stacks for easy field service
DC OUTPUT CURRENT 1800 A
Characteristic Conditions
IDC VINS (rms)
DC output current 1800 A 1800 A Insulation voltage 3000 V 3000 V
ValueValue
THYRISTOR TRIGGERING CHARACTERISTICS
VGT IGT
dV/dt Critical rate of rise off-state voltage Tj= 125 °C 1000 V/us 1000 V/us VRRM Blocking Voltage Tj = 125 °C 1200 V 1600 V
Gate trigger voltage Gate trigger current
Tj = 25 °C, VD = 5 V Tj = 25 °C, VD = 5 V
3 V 3 V
300 mA 300 mA
FUSE TYPE SIBA 2068132.1250
VNF INF PVF
I²t
Rated voltage 690 V 690 V Rated current 1250 A 1250 A Power loss At rated current 147 W 147 W
Total I2t
1140
kA2s
1330
kA2s
MECHANICAL AND THERMAL CHARACTERISTICS
Width 500 mm 500 mm 500 mm Depth 275 mm 275 mm 275 mm Height 855 mm 855 mm 855 mm
Mass 70 kg 70 kg 70 kg Ta max Max amb. op. Temp. 40 °C 40 °C 40 °C Tstg Storage temperature -40/125 °C -40/125 °C -40/125 °C
Document GOG9xx18T001
Green Power
Semiconductors
THREE PHASE AC-DC BRIDGE GOG9xx18
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GOG9xx18T001
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