Green Power Semiconductors GOB96027, GOB95027, GOB94027 Datasheet
Green Power
Semic onduct ors
Line to line voltage
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
GOB9xx27
Bi-DIRECTIONAL
THREE PHASE AC-DC BRIDGE
Fuse protection
Temperature sensors
Snubber for SCR's protections
Extractible stacks for easy field service
LINE VOLTAGE UP TO 690V
DC OUTPUT CURRENT 2700A
GOB94027 GOB95027 GOB96027
400 V 500 V 690 V
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Characteristic Conditions
I
DC
V
(rms)
INS
DC output current 2700 A 2700 A 2700 A
Insulation voltage 3000 V 3000 V 3000 V
ValueValueValue
THYRISTOR TRIGGERING CHARACTERISTICS
V
GT
I
GT
dV/dt Critical rate of rise off-state voltage Tj= 125 °C 1000 V/us 1000 V/us 1000 V/us
VRRM Blocking Voltage Tj = 125 °C 1200 V 1600 V 2200 V
Gate trigger voltage
Gate trigger current
= 25 °C, VD = 5 V
j
T
= 25 °C, VD = 5 V
j
T
3V 3V 3V
400 mA 400 mA 400 mA
FUSE TYPE 12x SIBA 2068132.800 / 2078132.800
V
NF
I
NF
P
VF
I²t
Rated voltage 690 V 690 V 1250 V
Rated current 800 A 800 A 800 A
Power loss At rated current 118 W 118 W 135 W
2
Total I
t
At 660/1000 V 480
kA2s
480
kA2s
1070
kA2s
MECHANICAL AND THERMAL CHARACTERISTICS
Width 712 mm 712 mm 642 mm
Depth 495 mm 495 mm 427 mm
Height 1635 mm 1635 mm 1330 mm
Mass 260 kg 260 kg 260 kg
Ta max Max amb. op. Temp. 40 °C 40 °C 40 °C
Tstg Storage temperature -40/60 °C -40/60 °C -40/60 °C
Document GOB9xx27T001
Green Power
Semiconductors
THREE PHASE AC-DC BRIDGE GOB9xx27
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GOB9xx27T001
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