Green Power Semiconductors GOB96017 Datasheet

Green Power
Sem icond uct ors
Line to line voltage
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
GOB96017
BI-DIRECTIONAL THREE PHASE AC-DC BRIDGE
Fuse protection
Temperature sensors
Snubber for SCR's protections
Extractible stacks for easy field service
LINE VOLTAGE UP TO 690V
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GOB96017
690 V
Characteristic Conditions
I
DC
V
(rms)
INS
DC output current 1700 A
Insulation voltage 3000 V
Value
THYRISTOR CHARACTERISTICS
V
GT
I
GT
dV/dt Critical rate of rise off-state voltage Tj= 125 °C 1000 V/us V
RRM
Gate trigger voltage
Gate trigger current
Blocking Voltage Tj = 125 °C 2200 V
= 25 °C, VD = 5 V
j
T
= 25 °C, VD = 5 V
j
T
3V
300 mA
FUSE TYPE SIBA 2077132.500
V
NF
I
NF
P
VF
I²t
Rated voltage 1000 V
Rated current 500 A
Power loss At rated current 90 W
2
t
Total I
At 1000V 310
kA2s
MECHANICAL AND THERMAL CHARACTERISTICS
Width 620 mm
Depth 420 mm
Height 1409 mm
Mass 170 kg
Ta max Max amb. op. Temp. 40 °C
Tstg Storage temperature -40/60 °C
Document GOB96017T001
Green Power
Semiconductors
THREE PHASE AC-DC BRIDGE GOB96017
61
Thermo sw.
62
Fuses
81
micro sw.
82
G1 K1
R S T
T1
FAN FAN
M 1ph
F1
T1'
G1' K1'
G2 K2
T2
F2
31
32
M 1ph
T2' T3'
G2' K2'
Fan Loss
Indicator
G3 K3
F3
T3
U3
FAN SUPPLY
1 phase
220V
50-60 Hz
V3
G3' K3'
+
G4 K4
T4
F4
T4' T5'
G4' K4'
G5 K5 G6 K6
T5 T6
F5 F6
G5' K5'
T6'
G6' K6'
-
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GOB96017T001
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