Green Power Semiconductors GOB94020, GOB95020 Datasheet

Green Power

Semic onduct ors

Line to line voltage

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

GOB9xx20

BI-DIRECTIONAL
THREE PHASE AC-DC BRIDGE

Fuse protection

Temperature sensors

Snubber for SCR's protections

Extractible stacks for easy field service

LINE VOLTAGE UP TO 500V

DC OUTPUT CURRENT 2000 A

GOB94020 GOB95020

400 V 500 V

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Characteristic Conditions

I

DC

V

(rms)

INS

DC output current 2000 A 2000 A

Insulation voltage 3000 V 3000 V

ValueValue

THYRISTOR TRIGGERING CHARACTERISTICS

V

GT

I

GT

dV/dt Critical rate of rise off-state voltage Tj= 125 °C 1000 V/us 1000 V/us

VRRM Blocking Voltage Tj = 125 °C 1200 V 1600 V

Gate trigger voltage

Gate trigger current

= 25 °C, VD = 5 V

j

T

= 25 °C, VD = 5 V

j

T

3V 3V

300 mA 300 mA

FUSE TYPE SIBA 2068132.1250

V

NF

I

NF

P

VF

I²t

Rated voltage 690 V 690 V

Rated current 1250 A 1250 A

Power loss At rated current 147 W 147 W

2

Total I

t

At 660V 1750

kA2s

1750

kA2s

MECHANICAL AND THERMAL CHARACTERISTICS

Width 500 mm 500 mm

Depth 375 mm 375 mm

Height 1405 mm 1405 mm

Mass 130 kg 130 kg

Ta max Max amb. op. Temp. 40 °C 40 °C

Tstg Storage temperature -40/60 °C -40/60 °C

Document GOB9xx20T002

Green Power

Semiconductors

BI-DIRECTIONAL GOB9xx20

In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data

sheet without notice.

Document GOB9xx20T002