Datasheet GMD72040 Datasheet (Green Power Semiconductors)

GMD72040

STANDARD RECOVERY DIODE MODULE

VOLTAGE UP TO 0 V

AVERAGE CURRENT 400 A

SURGE CURRENT 8.7 kA

BLOCKING CHARACTERISTICS

Characteristic Conditions

V

RRM

Repetitive peak reverse voltage 1200-2000 V

V

RSM

Non-repetitive peak reverse voltage 100 V

I

RRM

Repetitive peak reverse current, max.

V

RRM

, single phase, half wave, Tj = Tjmax

20 mA

FORWARD CHARACTERISTICS

I

F(AV)

Average forward current Sine wave,180° conduction, Tc = 85°C 400 A

I

F(RMS)

R.M.S. forward current Sine wave,180° conduction, Tc = 85°C 625 A

I

FSM

Surge forward current

Non rep. half sine wave, 50 Hz, V

R

= 0 V, Tj = 25 °C

8.7 kA

I²t I² t for fusing coordination 378 kA²s

V

FM

Peak forward voltage, max

Forward current I

F

=

1300 A, Tj = 25 °C 1.5 V

SWITCHING CHARACTERISTICS

Q

rr

Rverse recovery charge, typ

T

j

= 25°C, IF = A, di/dt = - A/µs

µC

I

rr

Reverse recovery current

V

R

= V

A

t

rr

Reverse recovery time µs

THERMAL AND MECHANICAL CHARACTERISTICS

R

th(j-c)

Thermal resistance (junction to case) 0.16 °C/W

R

th(c-h)

Thermal resistance (case to heatsink) 0.03 °C/W

T

jmax

Max operating junction temperature 150 °C

T

stg

Storage temperature -40 / 150 °C

M Mounting torque - Bus bar +/- 10% 10 N·m

M Mounting torque - Heatsink +/- 10% 6 N·m

mass 100 g

Document GMD72040T001

Value

GPS - Green Power Semiconductors SPA

Factory: Via Ungaretti 10, 16157 Genova, Italy

Phone: [phone]

Fax: [phone]

Web: www.gpsemi.it

E-mail: [e-mail]

Green Power

Semiconductors

dimensions mm [inch]