
MEMORY MODULE
GOODRAM zastrzega prawo do zmian w specyfikacji i opisach produktu w każdej chwili bez uprzedniej informacji.
Product Sheet | IRDM X | V1.0 | © Wilk Elektronik S.A. - GOODRAM
IR-XR 3000 D4 64 L16 S 8G
DDRIV MODULE
PART NUMBERING
SYSTEM
SPEED / DATA TRANSFER 3000Mhz / PC4-24000
MODULE TYPE DDR4 SDRAM DIMM
DRAM COMPONENT ORAGNIZATION
NUMBER OF DRAM COMPONENTS
PSEUDO OPEN DRAIN 1.2V (POD12)
16 RAS# TO CAS# DELAY, tRCD
18 ROW PRECHARGE TIME, tRP
18 ACTIVE TO PRECHARGE TIME, tRAS

MEMORY MODULE
GOODRAM zastrzega prawo do zmian w specyfikacji i opisach produktu w każdej chwili bez uprzedniej informacji.
Product Sheet | IRDM X | V1.0 | © Wilk Elektronik S.A. - GOODRAM
Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage 1 2
Key Byte / DRAM Device Type
12 3 Key Byte / Module Type
2 4 SDRAM Density and Banks
8 8 SDRAM Thermal and Refresh Options
0 9 Other SDRAM Optional Features
Reserved -- must be coded as 0x00
Module Nominal Voltage, VDD
Reserved -- must be coded as 0x00
SDRAM Minimum Cycle Time (tCKAVGmin)
SDRAM Maximum Cycle Time (tCKAVGmax)
CAS Latencies Supported, First Byte
CAS Latencies Supported, Second Byte
CAS Latencies Supported, Third Byte
CAS Latencies Supported, Fourth Byte
Minimum CAS Latency Time (tAAmin)
Minimum RAS to CAS Delay Time (tRCDmin)
Minimum Row Precharge Delay Time (tRPmin)
Upper Nibbles for tRASmin and tRCmin
Minimum Active to Precharge Delay Time (tRASmin), Least Significant Byte
Minimum Active to Active/Refresh Delay Time (tRCmin), Least Significant Byte
Minimum Refresh Recovery Delay Time (tRFC1min), LSB
Minimum Refresh Recovery Delay Time (tRFC1min), MSB
Minimum Refresh Recovery Delay Time (tRFC2min), LSB
Minimum Refresh Recovery Delay Time (tRFC2min), MSB
Minimum Refresh Recovery Delay Time (tRFC4min), LSB
Minimum Refresh Recovery Delay Time (tRFC4min), MSB
Minimum Four Activate Window Time (tFAWmin), Most Significant Nibble
Minimum Four Activate Window Time (tFAWmin), Least Significant Byte
Minimum Activate to Activate Delay Time (tRRD_Smin), different bank group
Minimum Activate to Activate Delay Time (tRRD_Lmin), same bank group
Minimum CAS to CAS Delay Time (tCCD_Lmin), same bank group
Reserved -- must be coded as 0x00

MEMORY MODULE
GOODRAM zastrzega prawo do zmian w specyfikacji i opisach produktu w każdej chwili bez uprzedniej informacji.
Product Sheet | IRDM X | V1.0 | © Wilk Elektronik S.A. - GOODRAM
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Connector to SDRAM Bit Mapping
Reserved -- must be coded as 0x00
Fine Offset for Minimum CAS to CAS Delay Time (tCCD_Lmin), same bank group
Fine Offset for Minimum Activate to Activate Delay Time (tRRD_Lmin), same bank group
Fine Offset for Minimum Activate to Activate Delay Time (tRRD_Smin), different bank group
Fine Offset for Minimum Activate to Activate/Refresh Delay Time (tRCmin)
Fine Offset for Minimum Row Precharge Delay Time (tRPmin)
Fine Offset for Minimum RAS to CAS Delay Time (tRCDmin)
Fine Offset for Minimum CAS Latency Time (tAAmin)
Fine Offset for SDRAM Maximum Cycle Time (tCKAVGmax)
Fine Offset for SDRAM Minimum Cycle Time (tCKAVGmin)
CRC for Base Configuration Section, Least Significant Byte
CRC for Base Configuration Section, Most Significant Byte
Module Specific SPD Bytes