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SILICON PLANAR POWER ZENER DIODES
Features
Silicon Planar Power Zener Diodes
for use in stabilizing and clipping circuits with high power rating.
The Zener voltages are graded according to the international
E 24 standard. Smaller voltage tolerances on request.
These diodes are also available in DO-41 case with the type
designation ZPY1 thru ZPY100.
These diodes are delivered taped.
Details see Taping.
Weight approx. : 0.25g
ZMY1 THRU ZMY100
DIMENSIONS
DIM
A 0.189 0.205 4.8 5.2
B 0.092 0.100 2.35 2.55
C 0.016 - 0.4 -
inches mm
Min. Max. Min. Max.
Note
Absolute Maximum Ratings (T
Zener current see Table "Characteristics"
Power dissipation at T
Junction temperature T
Storage temperature range T
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
Characteristics
Thermal resistance
junction to ambient Air
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
=25 P
amb
T
=25
at
amb
=25 )
a
Symbols Min. Typ. Max. Units
R
thA
Symbols Values Units
1)
tot
j
S
- - 170
1
175
-55 to +175
W
1)
1
K/W
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2)
Typ e
Zener voltage
at IZ test
V
Z
Dynamic
resistance at I
test f=1KHz
r
ZJ
Temp. coeff. of
Zener volt.
Z
at I
Z
test
Test current Reverse voltage
VZ
IZ test V
at I
=0.5uA
R
R
Admissible Zener
current
at t
=25
amb
V 10-4/K mA V mA
ZMY1
ZMY3.9
ZMY4.3
ZMY4.7
ZMY5.1
ZMY5.6
ZMY6.2
ZMY6.8
ZMY7.5
ZMY8.2
ZMY9.1
ZMY10
ZMY11
ZMY12
ZMY13
ZMY15
ZMY16
ZMY18
ZMY20
ZMY22
ZMY24
ZMY27
ZMY30
ZMY33
ZMY36
ZMY39
ZMY43
ZMY47
ZMY51
ZMY56
ZMY62
ZMY68
ZMY75
ZMY82
ZMY91
ZMY100
3)
0.65 ... 0.75 6.5(<8) -26 ... -23 5 - 406
3.7 ... 4.1 4(<7) -7 ... +2 100 - 203
4.0 ... 4.6 4(<7) -7 ... +3 100 - 182
4.4 ... 5.0 4(<7) -7 ... +4 100 - 165
4.8 ... 5.4 2(<5) -6 ... +5 100 >0.7 150
5.2 ... 6.0 1(<2) -3 ... +5 100 >1.5 135
5.8 ... 6.6 1(<2) -1 ... +6 100 >2.0 128
6.4 ... 7.2 1(<2) 0 ... 7 100 >3.0 110
7.0 ... 7.9 1(<2) 0 ... 7 100 >5.0 100
7.7 ... 8.7 1(<2) +3 ... +8 100 >6.0 89
8.5 ... 9.6 2(<4) +3 ... +8 50 >7.0 82
9.4 ... 10.6 2(<4) +5 ... +9 50 >7.5 74
10.4 ... 11.6 3(<7) +5 ... +10 50 >8.5 66
11.4 ... 12.7 3(<7) +5 ... +10 50 >9.0 60
12.4 ... 14.1 4(<9) +5 ... +10 50 >10 55
13.8 ...15.8 4(<9) +5 ... +10 50 >11 49
15.3 ... 17.1 5(<10) +7 ... +11 25 >12 44
16.8 ... 19.1 5(<11) +7 ... +11 25 >14 40
18.8 ... 21.2 6(<12) +7 ... +11 25 >15 36
20.8 ... 23.3 7(<13) +7 ... +11 25 >17 34
22.8 ... 25.6 8(<14) +7 ... +12 25 >18 29
25.1 ... 28.9 9(<15) +7 ... +12 25 >20 27
28 ... 32 10(<20) +7 ... +12 25 >22.5 25
31 ... 35 11(<20) +7 ... +12 25 >25 22
34 ... 38 25(<60) +7 ... +12 10 >27 20
37 ... 41 30(<60) +8 ... +12 10 >29 18
40 ... 46 35(<80) +8 ... +13 10 >32 17
44 ... 50 40(<80) +8 ... +13 10 >35 15
48 ... 54 45(<100) +8 ... +13 10 >38 14
52 ... 60 50(<100) +8 ... +13 10 >42 13
58 ... 66 60(<130) +8 ... +13 10 >47 11
64 ... 72 65(<130) +8 ... +13 10 >51 10
70 ... 79 70(<160) +8 ... +13 10 >56 9
77 ... 88 80(<160) +8 ... +13 10 >61 8
85 ... 96 120(<250) +9 ... +13 5 >68 7.5
94 ... 106 130(<250) +9 ... +13 5 >75 7
Notes:
(1) Valid provided that electrodes are kept at ambient temperature.
(2) Tested with pulses tp=20ms.
(3) The ZMY1 is a silicon diode operated in forward direction. Hence, the index of all characteristics and maximum ratings should be F instead of Z.
Connect the cathode terminal to the negative pole.
1)
I
Z
2