GOOD-ARK 1N914, 1N4454, 1N4453, 1N4451, 1N4450 Datasheet
...
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
DIMENSIONS
DIM
A - 0.114 - 2.9
B - 0.075 - 1.9
C - 0.017 - 0.42
D 0.630 - 16.0 -
inches mm
Min. Max. Min. Max.
Note
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
DIMENSIONS
DIM
A - 0.154 - 3.9
B - 0.075 - 1.9
C - 0.020 - 0.52
D 1.083 - 27.50 -
inches mm
Min. Max. Min. Max.
Note
Electrical Characteristics
Max.
reverse
voltage
V
VIO mA P
RM
Max.
aver.
rectified
current
power
dissip.
at 25
mW Tj VF V
tot
Type Peak
1N914 100 75 500 200 1.0 10 25 20 Max. 4.0 I
1)
1N4149
100 150 500 200 1.0 10 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4150 50 200 500 200 1.0 200 100 50 Max. 4.0 I
1N4152 40 150 400 175 0.55 0.10 50 30 Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4153 75 150 400 175 0.55 0.10 50 50 Max. 2.0 I
2)
1N4154 35 150
1)
1N4447
1N4449
100 150 500 200 1.0 20 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1)
100 150 500 200 1.0 30 25 20 Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
500 200 1.0 0.10 100 25 Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4450 40 150 400 175 0.54 0.50 50 30 Max. 4.0 I
1N4451 40 150 400 175 0.50 0.10 50 30 Max. 10 I
1N4453 30 150 400 175 0.55 0.01 50 20 - -
1N4454 75 150 400 175 1.0 10 100 50 Max. 4.0 I
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34: P
Max. forward
Max.
voltage drop
junction
temperature
at
I
=300mW TS=-65 to +175
tot
TJ=175 R
F
mA
Max. reverse
current
at
nA
I
n
V
0.4K/mW
tha
1
Max. reverse recovery time
nS Conditions
t
rr
V
R
F
F=IR
F
F=IR
F=IR
F=IR
=10mA, VR=6V, RL=100 , to IR=1mA
=10 to 200 mA, to 0.1 I
F
=10mA, VR=6V, RL=100 , to IR=1mA
=10mA, to IR=1mA
=10mA, to IR=1mA
=10mA, to IR=1mA
Loading...